Adaptive geometry for optimal focused ion beam etching

Patent metadata

Field	Value
Publication number	US-11315754-B2
Application number	US-202016859974-A
Country	US
Kind code	B2
Filing date	Apr 27, 2020
Priority date	Apr 27, 2020
Publication date	Apr 26, 2022
Grant date	Apr 26, 2022

Abstract

A method of evaluating a region of a sample that includes alternating layers of different material. The method includes milling, with a focused ion beam, a portion of the sample that includes the alternating layers of different material; reducing the milling area; and repeating the milling and reducing steps multiple times during the delayering process until the process is complete.

First claim

What is claimed is:

1. A method of evaluating a region of a sample that includes a plurality of alternating layers of different material stacked upon each other, the method comprising:
milling, with a focused ion beam, an area of the sample that includes the alternating layers of different material that generate different numbers of secondary electrons when milled;
detecting secondary electrons generated during the milling with a detector and outputting a signal representing the detected secondary electrons;
reducing the milling area; and
iteratively repeating the milling, detecting and reducing steps multiple times during the evaluating until an endpoint is identified based on the signal output by the detector.

2. The method of evaluating a region of a sample according to claim 1 wherein reducing the milling area is done by a pre-defined milling recipe defined in advance of the milling.

3. The method of evaluating a region of a sample according to claim 2 wherein reducing the milling area includes reducing the milling area after every iteration of the milling.

4. The method of evaluating a region of a sample according to claim 2 wherein the milling recipe includes a plurality of iterations and reduces the milling area in some of the plurality of iterations and does not reduce the milling area in others of the plurality of iterations.

5. The method of evaluating a region of a sample according to claim 1 wherein reducing the milling area is done adaptively by feedback from a signal-to-noise ratio of the signal representing the detected secondary electrons generated during the milling.

6. The method of evaluating a region of a sample according to claim 1 wherein the alternating layers of different material comprise at least first, second and third layers each of which generate different numbers of secondary electrons when milled.

7. The method of evaluating a region of a sample according to claim 1 wherein the sample includes at least ten sets of alternating layers and the milling is an iterative process in which the focused ion beam is repeatedly scanned across the portion of the sample milling a recess through each of the ten sets of alternating layers.

8. The method of evaluating a region of a sample according to claim 1 wherein the sample is a semiconductor wafer.

9. The method of evaluating a region of a sample according to claim 8 wherein the multiple alternating layers are part of a 3D-NAND flash memory structure.

10. The method of evaluating a region of a sample according to claim 1 wherein a sidewall profile of a recess formed by the milling is angled inward and generally smooth from a top portion of the recess to a bottom of the recess.

11. The method of evaluating a region of a sample according to claim 1 wherein a sidewall profile of a recess formed by the milling includes multiple steps from a top portion of the recess to a bottom of the recess that is smaller than the top portion.

12. A system for evaluating a region of a sample that includes alternating layers of different material, the system comprising:
a vacuum chamber;
a sample support configured to hold the sample within the vacuum chamber during a sample evaluation process;
a focused ion beam (FIB) column configured to direct a charged particle beam into the vacuum chamber;
a processor and a memory coupled to the processor, the memory including a plurality of computer-readable instructions that, when executed by the processor, cause the system to:
mill, with a focused ion beam, an area of the sample that includes the alternating layers of different material that generate different numbers of secondary electrons when milled;
detect secondary electrons generated during the milling with a detector and output a signal representing the detected secondary electrons;
reduce the milling area; and
iteratively repeat the milling, detecting and reducing steps multiple times during the evaluating process until an endpoint of the process is identified based on the signal.

13. A method of evaluating a region of a sample that includes a plurality of alternating layers of different material stacked upon each other, the method comprising:
milling, with a focused ion beam, a portion of the sample that includes the alternating layers of different material, wherein the milling is an iterative process in which the focused ion beam is repeatedly scanned across the portion of the sample thereby milling a recess into a depth of the sample, and
wherein as the milling proceeds a central sub-region of the portion of the sample remains generally flat while a region surrounding the central sub-region is non-planar;
during the milling, measuring and integrating secondary electron data generated by a detector when the focused ion beam is scanned over the generally flat central sub-region of the portion of the sample while ignoring secondary electron data collected by the detector when the focused ion beam is scanned over the non-planar region of the portion of the sample outside the central sub-region; and
endpointing the milling based on the secondary electron data collected by the detector.

14. The method of evaluating a region of a sample according to claim 13 wherein a geometry of the sub-region is determined in advance of the milling.

15. The method of evaluating a region of a sample according to claim 13 wherein the sub-region is gradually decreased in size over multiple iterations of the milling according to a predetermined formula.

16. The method of evaluating a region of a sample according to claim 13 wherein the sub-region is gradually decreased in size over multiple iterations of the milling in response to the data generated by the detector to maintain a signal-to-noise ratio of the data generated by the detector within a predetermined range.

17. The method of evaluating a region of a sample according to claim 13 wherein, during the milling, secondary electrons from the alternating layers of different material are collected and used to determine an endpoint for the milling.

18. The method of evaluating a region of a sample according to claim 13 wherein the sample is a semiconductor wafer, the alternating layers of different material comprise at least three sets of alternating first and second layers that generate different numbers of secondary electrons when milled, and the milling can be an iterative process in which the focused ion beam is repeatedly scanned across the portion of the sample thereby milling the recess through each of the ten sets of alternating layers.

Assignees

• Applied Materials Israel Ltd

Inventors

• Blayvas Ilya
• Bruner Gal
• Zur Yehuda
• Mairov Alexander
• Davidescu Ron
• Dotan Kfir
• Litman Alon

Classifications

• H01J37/3005 Primary

  Observing the objects or the point of impact on the object · CPC title

• H01J2237/31749

  Focused ion beam · CPC title

• H01J37/3056

  for microworking, e. g. etching of gratings or trimming of electrical components · CPC title

• H01J37/305 Primary

  for casting, melting, evaporating, or etching · CPC title

• G01N1/32 Primary

  Polishing; Etching · CPC title