Laminated substrate with piezoelectric thin film, piezoelectric thin film element and method for manufacturing this element
US-2018301618-A1 · Oct 18, 2018 · US
Potassium sodium niobate sputtering target
US11313029B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11313029-B2 |
| Application number | US-202016842896-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 8, 2020 |
| Priority date | Apr 26, 2019 |
| Publication date | Apr 26, 2022 |
| Grant date | Apr 26, 2022 |
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- Title
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Abstract
Official abstract text for this publication.
A sputtering target formed from a potassium sodium niobate sintered body to which a dopant has been added; as a dopant, the sputtering target includes one or more types among Li, Mg, Ca, Sr, Ba, Bi, Sb, V, In, Ta, Mo, W, Cr, Ti, Zr, Hf, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Cu, Zn, Ag, Mn, Fe, Co, Ni, Al, Si, Ge, Sn, and Ga; and a variation coefficient of a dopant concentration in a plane of the sputtering target is 0.12 or less. In terms of suppressing the generation of particles, provided is a sputtering target which is formed from a sintered body that includes potassium sodium niobate and to which a dopant has been added.
First claim
Opening claim text (preview).
We claim: 1. A sputtering target formed from a potassium sodium niobate sintered body to which a dopant has been added, wherein the dopant contained is one or more types among Li, Mg, Ca, Sr, Ba, Bi, Sb, V, In, Ta, Mo, W, Cr, Ti, Zr, Hf, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Cu, Zn, Ag, Mn, Fe, Co, Ni, Al, Si, Ge, Sn, and Ga; and wherein a variation coefficient of a dopant concentration in a plane of the sputtering target is 0.12 or less. 2. The sputtering target according to claim 1 , wherein a variation coefficient of a K/Na composition ratio in a plane of the sputtering target is 0.12 or less. 3. The sputtering target according to claim 2 , wherein a relative density is 60% or higher. 4. The sputtering target according to claim 2 , wherein a relative density is 70% or higher. 5. The sputtering target according to claim 2 , wherein a relative density is 80% or higher. 6. The sputtering target according to claim 5 , wherein a flexural strength is 10 MPa or more. 7. The sputtering target according to claim 6 , wherein an average crystal grain size is 1 to 20 μm. 8. The sputtering target according to claim 7 , wherein a content of carbon as a gas component is 1000 wtppm or less. 9. The sputtering target according to claim 8 , wherein a content ratio of niobium (Nb), potassium (K), and sodium (Na) is, in terms of atomic ratio, Nb:K:Na=1.0:X:1−X, where 0.3≤X<1.0. 10. The sputtering target according to claim 9 , wherein a total content of the dopant is 0.04 at % to 4 at %. 11. The sputtering target according to claim 1 , wherein a relative density is 60% or higher. 12. The sputtering target according to claim 1 , wherein a relative density is 70% or higher. 13. The sputtering target according to claim 1 , wherein a relative density is 80% or higher. 14. The sputtering target according to claim 1 , wherein a flexural strength is 10 MPa or more. 15. The sputtering target according to claim 1 , wherein an average crystal grain size is 1 to 20 μm. 16. The sputtering target according to claim 1 , wherein a content of carbon as a gas component is 1000 wtppm or less. 17. The sputtering target according to claim 1 , wherein a content ratio of niobium (Nb), potassium (K), and sodium (Na) is, in terms of atomic ratio, Nb:K:Na=1.0:X:1−X, where 0.3≤X<1.0. 18. The sputtering target according to claim 1 , wherein a total content of the dopant is 0.04 at % to 4 at %.
Assignees
Inventors
Classifications
Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy · CPC title
Niobium oxides, niobates, tantalum oxides, tantalates, or oxide-forming salts thereof · CPC title
- C23C14/06Primary
characterised by the coating material ({C23C14/0021} , C23C14/04 take precedence) · CPC title
based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates · CPC title
Material · CPC title
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- What does patent US11313029B2 cover?
- A sputtering target formed from a potassium sodium niobate sintered body to which a dopant has been added; as a dopant, the sputtering target includes one or more types among Li, Mg, Ca, Sr, Ba, Bi, Sb, V, In, Ta, Mo, W, Cr, Ti, Zr, Hf, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Cu, Zn, Ag, Mn, Fe, Co, Ni, Al, Si, Ge, Sn, and Ga; and a variation coefficient of a dopant conce…
- Who is the assignee on this patent?
- Jx Nippon Mining & Metals Corp
- What technology area does this patent fall under?
- Primary CPC classification C23C14/06. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Apr 26 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 6 related publications on this page (citations in our corpus or others sharing the same primary CPC).