Semiconductor device, and power conversion device including the semiconductor device

Patent metadata

Field	Value
Publication number	US-11302597-B2
Application number	US-201716617233-A
Country	US
Kind code	B2
Filing date	Sep 21, 2017
Priority date	Sep 21, 2017
Publication date	Apr 12, 2022
Grant date	Apr 12, 2022

Abstract

A semiconductor device is provided with a heat dissipating face side skirt portion, which is a frame-form projection, on a heat dissipating face of a lead frame. Because of this, creepage distance increases with a small increase in an amount of resin, and insulating properties improve. Also, the heat dissipating face side skirt portion is molded via two transfer molding steps, wettability of the second molding resin with respect to a first molding resin and the lead frame increases, and adhesion improves. Furthermore, an end face of an inner lead is exposed in an element sealing portion on a mounting face side, and covered with a second thin molded portion molded using the second molding resin, whereby heat generated in a semiconductor element can efficiently be caused to escape from faces of both a first thin molded portion and the second thin molded portion, because of which heat dissipation improves.

First claim

The invention claimed is:

1. A semiconductor device comprising:
a lead frame on which a semiconductor element is mounted;
an inner lead connected to an electrode of the semiconductor element; and
a first resin and a second resin that seal one portion of the lead frame, the semiconductor element, and the inner lead, wherein,
when a face on a side of the lead frame on which the semiconductor element is mounted is assumed to be a mounting face and a face on a side opposite to that of the mounting face is assumed to be a heat dissipating face,
a frame-form projection is provided in an outer peripheral end portion of the heat dissipating face, two opposing sides of the frame-form projection and a first thin molded portion that covers a region between the two sides are integrally molded using the second resin, two other opposing sides of the frame-form projection are molded using the first resin,
an element sealing portion that covers one portion of the inner lead and the semiconductor element is molded on the mounting face using the first resin, and a second thin molded portion that covers one portion of a surface of the element sealing portion and the inner lead exposed in the element sealing portion is molded using the second resin,
wherein the frame-form projection is covered with the first resin and the second resin.

2. The semiconductor device according to claim 1 , wherein the element sealing portion has a flat face parallel to the mounting face, a mounting face side frame-form projection is provided in an outer peripheral end portion of the flat face, two opposing sides of the mounting face side frame-form projection and a second thin molded portion that covers a region between the two sides are integrally molded using the second resin, and two other opposing sides of the mounting face side frame-form projection are molded using the first resin.

3. The semiconductor device according to claim 2 , wherein two sides of the mounting face side frame-form projection molded using the first resin are covered with the second resin.

4. The semiconductor device according to claim 1 , wherein the element sealing portion has a flat face parallel to the mounting face, in addition to which the inner lead has an end face parallel to the flat face, and heights of the flat face and the end face from the mounting face are equal.

5. The semiconductor device according to claim 4 , wherein the second thin molded portion covers the flat face of the element sealing portion and the end face of the inner lead exposed in the flat face.

6. The semiconductor device according to claim 1 , wherein a surface of the inner lead is roughened.

7. The semiconductor device according to claim 1 , wherein the inner lead has a scale-form portion in which scale-like projections are disposed continuously.

8. The semiconductor device according to claim 1 , wherein the second resin is a high heat dissipating resin whose thermal conductivity is higher than that of the first resin.

9. The semiconductor device according to claim 1 , comprising heatsinks joined directly to the first thin molded portion and the second thin molded portion.

10. A power conversion device including an inverter that includes one or more semiconductor devices and a motor, wherein each of the one or more semiconductor devices comprises:
a lead frame on which a semiconductor element is mounted;
an inner lead connected to an electrode of the semiconductor element; and
a first resin and a second resin that seal one portion of the lead frame, the semiconductor element, and the inner lead,
when a face on a side of the lead frame on which the semiconductor element is mounted is assumed to be a mounting face and a face on a side opposite to that of the mounting face is assumed to be a heat dissipating face,
a frame-form projection is provided in an outer peripheral end portion of the heat dissipating face, two opposing sides of the frame-form projection and a first thin molded portion that covers a region between the two sides are integrally molded using the second resin, two other opposing sides of the frame-form projection are molded using the first resin,
an element sealing portion that covers one portion of the inner lead and the semiconductor element is molded on the mounting face using the first resin, and a second thin molded portion that covers one portion of a surface of the element sealing portion and the inner lead exposed in the element sealing portion is molded using the second resin,
wherein the frame-form projection is covered with the first resin and the second resin, and
heatsinks are disposed on the first thin molded portion and the second thin molded portion of the semiconductor device, and each of the heatsinks is one portion of a frame body of the inverter or the motor.

11. A power conversion device including an inverter that includes one or more semiconductor devices, and a motor, wherein each of the one or more semiconductor devices comprises:
a lead frame on which a semiconductor element is mounted;
an inner lead connected to an electrode of the semiconductor element; and
a first resin and a second resin that seal one portion of the lead frame, the semiconductor element, and the inner lead,
when a face on a side of the lead frame on which the semiconductor element is mounted is assumed to be a mounting face and a face on a side opposite to that of the mounting face is assumed to be a heat dissipating face,
a frame-form projection is provided in an outer peripheral end portion of the heat dissipating face, two opposing sides of the frame-form projection and a first thin molded portion that covers a region between the two sides are integrally molded using the second resin, two other opposing sides of the frame-form projection are molded using the first resin,
an element sealing portion that covers one portion of the inner lead and the semiconductor element is molded on the mounting face using the first resin, and a second thin molded portion that covers one portion of a surface of the element sealing portion and the inner lead exposed in the element sealing portion is molded using the second resin,
wherein the frame-form projection is covered with the first resin and the second resin, and
heatsinks are disposed on the first thin molded portion and the second thin molded portion of the semiconductor device, and each of the heatsinks is joined to a frame body of the inverter or the motor.

12. A semiconductor device comprising:
a lead frame on which a semiconductor element is mounted;
an inner lead connected to an electrode of the semiconductor element; and
a first resin and a second resin that seal one portion of the lead frame, the semiconductor element, and the inner lead, wherein,
when a face on a side of the lead frame on which the semiconductor element is mounted is assumed to be a mounting face and a face on a side opposite to that of the mounting face is assumed to be a heat dissipating face,
a frame-form projection is provided in an outer peripheral end portion of the heat dissipating face, two opposing sides of the frame-form projection and a first thin molded portion that covers a region between the two sides are integrally molded using the second resin, two other opposing sides of the frame-form projection are molded using the first resin,
an element sealing portion that covers one portion of the inner lead and the semiconductor element is molded on the mounting face using the first resin, and a second thin molded portion that covers one portion of a surface of the element sealing portion and the inner lead exposed in the element sealing portion is molded using the second resin,
wherein the elemen

Assignees

• Mitsubishi Electric Corp

Inventors

• KAJIHARA Takanobu
• Omae Katsuhiko
• Nagao Takashi
• Funakoshi Masayuki
• EMI Norio
• Fujita Atsuki
• Okabe Yuki

Classifications

• H10W90/766

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W90/756

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W72/871

  Bond wires and strap connectors · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W74/121 Primary

  by multiple encapsulations, e.g. by a thin protective coating and a thick encapsulation · CPC title