Method and apparatus for micromachining semiconductor material from opposing sides through synchronous coordination of laser and electrochemistry

Patent metadata

Field	Value
Publication number	US-11295953-B2
Application number	US-201917257328-A
Country	US
Kind code	B2
Filing date	Feb 28, 2019
Priority date	Feb 25, 2019
Publication date	Apr 5, 2022
Grant date	Apr 5, 2022

Abstract

An apparatus for micromachining a semiconductor material from opposing sides through synchronous coordination of laser and electrochemistry includes an optical path system, a stable low-pressure jet generation system, and an electrolytic machining system. The optical path system includes a laser generator, a beam expander, a reflector, a galvanometer, and a lens. The electrolytic machining system includes a direct-current pulsed power supply, an adjustable cathode fixture, an electrolyte tank, a current probe, and an oscilloscope. The stable low-pressure jet generation system provides an electrolyte flow into a metal needle. The electrolyte flow forms an electrolyte layer between a semiconductor material and a cathode copper plate, such that the cathode and the anode are in electrical contact with each other. In a method employing the apparatus, a laser beam is irradiated onto the semiconductor material to form a local high-temperature region, which leads to a localized increase in electrical conductivity.

First claim

What is claimed is:

1. A method for micromachining a semiconductor material from opposing sides through synchronous coordination of laser and electrochemistry, comprising:
irradiating an incident laser beam onto the semiconductor material to form a local high-temperature region in the semiconductor material to obtain a localized increase in electrical conductivity, and connecting the semiconductor material serving as an anode to a positive electrode of a direct-current pulsed power supply;
connecting a negative electrode of the direct-current pulsed power supply to a cathode copper plate, and arranging the cathode copper plate and the semiconductor material in parallel with a gap between the semiconductor material and the cathode copper plate; and
injecting an electrolyte, by a metal needle and in a form of a low-pressure jet, into the gap between the semiconductor material and the cathode copper plate to form an electrolyte layer, wherein a cathode and the anode are in electrical contact with each other; and an electrochemical anodic dissolution region on a back surface of the semiconductor material corresponds to an irradiation position of the incident laser beam.

2. The method for micromachining the semiconductor material from the opposing sides through the synchronous coordination of the laser and the electrochemistry according to claim 1 , wherein
the semiconductor material has the electrical conductivity positively correlated with a temperature, and
the semiconductor material is monocrystalline silicon or monocrystalline germanium.

3. The method for micromachining the semiconductor material from the opposing sides through the synchronous coordination of the laser and the electrochemistry according to claim 1 , wherein
by adjusting a space-time distribution of energy of the incident laser beam, a temperature field distribution near a laser irradiation region in the semiconductor material is adjusted to implement dynamic and localized regulation of the electrical conductivity of the semiconductor material, to implement differential control of an electrochemical anodic dissolution rate on a lower surface of the semiconductor material.

4. The method for micromachining the semiconductor material from the opposing sides through the synchronous coordination of the laser and the electrochemistry according to claim 1 , wherein
forced convection measures are taken on an upper surface of the semiconductor material to slow down a temperature rise outside an irradiation region, and spatial positions of high temperature-induced conductive channels are relatively concentrated to enhance localization of an electrochemical anodic dissolution on a lower surface of the semiconductor material.

5. The method for micromachining the semiconductor material from the opposing sides through the synchronous coordination of the laser and the electrochemistry according to claim 1 , wherein
microstructures are etched on an upper surface of the semiconductor material by controlling parameters comprising energy, a frequency, and a scanning speed of the incident laser beam, and the microstructures obtained by laser etching on the upper surface correspond to microstructures formed by an electrochemical anodic dissolution on a lower surface of the semiconductor material.

6. The method for micromachining the semiconductor material from the opposing sides through the synchronous coordination of the laser and the electrochemistry according to claim 1 , wherein
inclined microstructures are machined on an upper surface and a lower surface of the semiconductor material by adjusting an angle between the incident laser beam and the semiconductor material.

7. The method for micromachining the semiconductor material from the opposing sides through the synchronous coordination of the laser and the electrochemistry according to claim 1 , wherein
the electrolyte in the metal needle is a high-concentration neutral saline solution with a mass fraction of 10%-30%, or an alkaline solution with a mass fraction of 4%-10%.

8. An apparatus for micromachining a semiconductor material from opposing sides through synchronous coordination of laser and electrochemistry, comprising:
an optical path system, a stable low-pressure jet generation system, and an electrolytic machining system, wherein
the optical path system comprises a laser generator, a beam expander, a reflector, a galvanometer, and a lens;
a laser beam emitted by the laser generator passes through the beam expander, the laser beam is then reflected by the reflector arranged at 45° to pass through the galvanometer and the lens, and the laser beam is irradiated onto the semiconductor material;
the electrolytic machining system comprises a direct-current pulsed power supply, an adjustable cathode fixture, an electrolyte tank, a current probe, and an oscilloscope;
the stable low-pressure jet generation system is configured for providing an electrolyte flow into a metal needle to form a stable low-pressure jet, and the electrolyte flow forms an electrolyte layer between the semiconductor material and a cathode copper plate, and a cathode and an anode are in electrical contact with each other.

9. The apparatus for micromachining the semiconductor material from the opposing sides through the synchronous coordination of the laser and the electrochemistry according to claim 8 , wherein
the semiconductor material and the cathode copper plate are both arranged on the adjustable cathode fixture, and an up and down fine adjustment of a position of the cathode copper plate is implemented through two fine adjustment screws in the adjustable cathode fixture;
a bottom of the adjustable cathode fixture is mounted on a base,
the base comprises a spherical universal adjustment member for adjusting a spatial angle between the semiconductor material and the cathode copper plate to obtain different laser incident angles, and the spherical universal adjustment member is locked by a locking device;
the base is arranged in the electrolyte tank; and
the electrolyte tank is arranged on an X-Y-Z linear motion platform, and the electrolyte tank is moved under a control of a computer and a motion control card.

10. The apparatus for micromachining the semiconductor material from the opposing sides through the synchronous coordination of the laser and the electrochemistry according to claim 8 , wherein
the laser generator is a nanosecond pulsed laser generator or a picosecond/femtosecond ultrashort pulsed laser generator.

Assignees

• Univ Jiangsu

Inventors

• Zhu Hao
• Zhang Zhi
• Mao Senshan
• Zhu Shuaijie
• Zhang Zhaoyang
• Xu Kun
• Wang Anbin
• Zhao Douyan

Classifications

• H10P34/42 Primary

  with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20) · CPC title

• C23C14/08

  Oxides (C23C14/10 takes precedence) · CPC title

• C25F7/00

  Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects (for both electrolytic coating and removal C25D); Servicing or operating · CPC title

• C25F3/12 Primary

  of semiconducting materials · CPC title

• B23K26/00

  Working by laser beam, e.g. welding, cutting or boring · CPC title