Apparatus with a substrate provided with plasma treatment

Patent metadata

Field	Value
Publication number	US-11291122-B2
Application number	US-201716637545-A
Country	US
Kind code	B2
Filing date	Sep 22, 2017
Priority date	Sep 22, 2017
Publication date	Mar 29, 2022
Grant date	Mar 29, 2022

Abstract

Embodiments of the present disclosure describe techniques for providing an apparatus with a substrate provided with plasma treatment. In some instances, the apparatus may include a substrate with a surface that comprises a metal layer to provide signal routing in the apparatus. The metal layer may be provided in response to a plasma treatment of the surface with a functional group containing a gas (e.g., nitrogen-based gas), to provide absorption of a transition metal catalyst into the surface, and subsequent electroless plating of the surface with a metal. The transition metal catalyst is to enhance electroless plating of the surface with the metal. Other embodiments may be described and/or claimed.

First claim

What is claimed is:

1. An apparatus, comprising:
a substrate with a surface that comprises a metal layer to provide signal routing in the apparatus, wherein the metal layer is provided in response to a treatment of the surface with a gas containing a functional group, to provide absorption of a transition metal catalyst into the surface, and subsequent electroless plating of the surface with a metal, wherein the transition metal catalyst is to enhance electroless plating of the surface with the metal, wherein, prior to the electroless plating, the transition metal catalyst comprises a plurality of seed protrusions disposed on the surface, wherein the metal layer comprises metal growth including a plurality of metal bumps deposited on the surface on top of the plurality of seeds such that the metal growth covers the plurality of seeds.

2. The apparatus of claim 1 , wherein the substrate comprises a dielectric material, wherein the material includes one of: epoxy resin, surface finish film, molding compound, solder resist, or photo imageable dielectric.

3. The apparatus of claim 1 , wherein the metal layer includes copper, wherein the treatment comprises a plasma treatment.

4. The apparatus of claim 1 , wherein the functional group comprises a nitrogen gas or a gas that contains nitrogen.

5. The apparatus of claim 1 , wherein the transition metal catalyst comprises an ionic or colloidal palladium.

6. The apparatus of claim 1 , further comprising a die disposed on the substrate.

7. The apparatus of claim 6 , wherein the apparatus further includes one or more vias arranged in the substrate, to provide the signal routing for signals generated by the die.

8. The apparatus of claim 1 , wherein the apparatus comprises a semiconductor package.

9. The apparatus of claim 1 , wherein the apparatus comprises a printed circuit board (PCB).

10. A computing device, comprising: a processor; and a memory coupled with the processor; wherein at least one of the processor or memory comprises an integrated circuit (IC), wherein the IC includes: a substrate with a surface that comprises a layer that contains a metal to provide signal routing for the IC, wherein the metal layer is provided in response to a plasma treatment of the surface with a gas containing a functional group, to provide absorption of a transition metal catalyst into the surface, and subsequent electroless plating of the surface with a metal, wherein the transition metal catalyst is to enhance electroless plating of the surface with the metal, wherein, prior to the electroless plating, the transition metal catalyst comprises a plurality of seed protrusions disposed on the surface, wherein the metal layer comprises metal growth including a plurality of metal bumps deposited on the surface on top of the plurality of seeds such that the metal growth covers the plurality of seeds.

11. The computing device of claim 10 , wherein the functional group comprises a nitrogen gas or a gas that contains nitrogen.

12. The computing device of claim 10 , wherein the transition metal catalyst comprises a palladium.

13. The computing device of claim 10 , wherein the substrate includes one or more vias arranged in the substrate, to provide the signal routing for signals generated by the processor.

14. The computing device of claim 10 , wherein the at least one of the processor or memory is provided in a die, wherein the die is disposed on the substrate.

Assignees

• Intel Corp

Inventors

• Grujicic Darko
• Shanmugam Rengarajan
• Gaan Sandeep
• Bayraktaroglu Adrian
• Dittler Roy
• Liu Ke
• Nad Suddhasattwa
• Wall Marcel A
• Manepalli Rahul N
• Tanikella Ravindra V

Classifications

• H10W74/15

  on active surfaces of flip-chip devices, e.g. underfills · CPC title

• H10W70/695

  Organic materials · CPC title

• H10W70/05

  of insulating or insulated package substrates, or of interposers, or of redistribution layers (manufacture or treatment of leadframes H10W70/04) · CPC title

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title