Method for producing semiconductor light emitting element

Patent metadata

Field	Value
Publication number	US-11289621-B2
Application number	US-201816768029-A
Country	US
Kind code	B2
Filing date	Nov 26, 2018
Priority date	Nov 29, 2017
Publication date	Mar 29, 2022
Grant date	Mar 29, 2022

Abstract

A method includes preparing a wafer including a substrate and a semiconductor structure, and irradiating an inner portion of the substrate at a predetermined depth in a thickness direction a plurality of times with laser pulses at a first time interval and a predetermined distance interval between irradiations. Each irradiation performed at the first time intervals in the step of irradiating the substrate with laser pulses includes irradiating the substrate at a first focal position in the thickness direction with a first laser pulse having a first pulse-energy; and after irradiating with the first laser pulse, irradiating the substrate with a second laser pulse performed after a second time interval, the second time interval being shorter than the first time interval and being in a range of 3 ps to 900 ps, and the second laser pulse having a second pulse-energy 0.5 to 1.5 times the first pulse-energy.

First claim

The invention claimed is:

1. A method of manufacturing a semiconductor light emitting element, the method comprising:
preparing a wafer including a substrate and a semiconductor structure on the substrate; and
irradiating an inner portion of the substrate of the wafer at a predetermined depth in a thickness direction a plurality of times with laser pulses at a first time interval and a predetermined distance interval between irradiations,
wherein each irradiation performed at the first time intervals in the step of irradiating the substrate with laser pulses includes:
irradiating the substrate at a first focal position in the thickness direction with a first laser pulse having a first pulse-energy; and
after irradiating with the first laser pulse, irradiating the substrate with a second laser pulse performed after a second time interval, the second time interval being shorter than the first time interval and being in a range of 3 ps to 900 ps, and the second laser pulse having a second pulse-energy 0.5 to 1.5 times the first pulse-energy.

2. The method of manufacturing a semiconductor light emitting element according to claim 1 wherein, in the step of irradiating the substrate with the second laser pulse, the second pulse-energy of the second laser pulse is 0.8 to 1.2 times the first pulse-energy.

3. The method of manufacturing a semiconductor light emitting element according to claim 2 wherein the second time interval is in a range of 3 ps to 500 ps.

4. The method of manufacturing a semiconductor light emitting element according to claim 3 wherein the second time interval is in a range of 50 ps to 350 ps.

5. The method of manufacturing a semiconductor light emitting element according to claim 1 , wherein the pulse-width of the first laser pulse and the second laser pulse are in a range of 100 fs to 10000 fs.

6. The method of manufacturing a semiconductor light emitting element according to claim 5 , wherein the first time interval is in a range of 5 μs to 40 μs.

7. The method of manufacturing a semiconductor light emitting element according to claim 6 , wherein the first pulse-energy of the first laser pulse is in a range of 0.5 μJ to 15 μJ.

8. The method of manufacturing a semiconductor light emitting element according to claim 7 , wherein the substrate is a sapphire substrate.

9. The method of manufacturing a semiconductor light emitting element according to claim 6 , wherein the substrate is a sapphire substrate.

10. The method of manufacturing a semiconductor light emitting element according to claim 5 , wherein the first pulse-energy of the first laser pulse is in a range of 0.5 μJ to 15 μJ.

11. The method of manufacturing a semiconductor light emitting element according to claim 10 , wherein the substrate is a sapphire substrate.

12. The method of manufacturing a semiconductor light emitting element according to claim 5 , wherein the substrate is a sapphire substrate.

13. The method of manufacturing a semiconductor light emitting element according to claim 1 , wherein the first time interval is in a range of 5 μs to 40 μs.

14. The method of manufacturing a semiconductor light emitting element according to claim 13 , wherein the first pulse-energy of the first laser pulse is in a range of 0.5 μJ to 15 μJ.

15. The method of manufacturing a semiconductor light emitting element according to claim 14 , wherein the substrate is a sapphire substrate.

16. The method of manufacturing a semiconductor light emitting element according to claim 13 , wherein the substrate is a sapphire substrate.

17. The method of manufacturing a semiconductor light emitting element according to claim 1 , wherein the first pulse-energy of the first laser pulse is in a range of 0.5 μJ to 15 μJ.

18. The method of manufacturing a semiconductor light emitting element according to claim 17 , wherein the substrate is a sapphire substrate.

19. The method of manufacturing a semiconductor light emitting element according to claim 1 , wherein the substrate is a sapphire substrate.

Assignees

• Nichia Corp
• Imra America Inc

Inventors

• Yamamoto Minoru
• Inoue Naoto
• Tamemoto Hiroaki
• Hotta Yoshitaka
• Ohtake Hideyuki

Classifications

• H10P54/00

  Cutting or separating of wafers, substrates or parts of devices · CPC title

• H10P34/42

  with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20) · CPC title

• H10H20/01 Primary

  Manufacture or treatment · CPC title

• B23K26/0006 Primary

  taking account of the properties of the material involved (B23K26/32, B23K26/40 take precedence) · CPC title

• B23K26/0624

  using ultrashort pulses, i.e. pulses of 1 ns or less · CPC title