Processing of semiconductors using vaporized solvents

Patent metadata

Field	Value
Publication number	US-11289323-B2
Application number	US-201816208003-A
Country	US
Kind code	B2
Filing date	Dec 3, 2018
Priority date	Dec 15, 2017
Publication date	Mar 29, 2022
Grant date	Mar 29, 2022

Abstract

Processes and apparatuses for the treatment of semiconductor workpieces are provided. In some embodiments, a method can include placing the workpiece into a process chamber; vaporizing a solvent to create a vaporized solvent; introducing the vaporized solvent into the process chamber; and exposing the workpiece to the vaporized solvent.

First claim

What is claimed is:

1. A method for processing a workpiece, the method comprising:
placing the workpiece into a process chamber;
vaporizing a solvent to create a vaporized solvent;
introducing a plasma-affected vaporized solvent into the process chamber;
exposing the workpiece to the plasma-affected vaporized solvent such that the plasma-affected vaporized solvent removes material from the workpiece; and
subsequent to exposing the workpiece to the plasma-affected vaporized solvent, exposing the workpiece to a non-plasma-affected vaporized solvent introduced into the process chamber;
wherein the plasma-affected vaporized solvent comprising one or more of methanol, N-methyl-2-pyrrolidone (NMP), N-ethyl-pyrrolidone (NEP), dimethyl sulfoxide (DMSO), propylene glycol methyl ether acetate (PGMEA), methyl ethyl ketone (MEK), γ-butyrolactone (GBL), propylene carbonate (PC), triethylamine (TEA), and acetonitrile; and
wherein the non-plasma-affected vaporized solvent comprises one or more of methanol, N-methyl-2-pyrrolidone (NMP), N-ethyl-pyrrolidone (NEP), dimethyl sulfoxide (DMSO), propylene glycol methyl ether acetate (PGMEA), methyl ethyl ketone (MEK), γ-butyrolactone (GBL), propylene carbonate (PC), triethylamine (TEA), and acetonitrile.

2. The method of claim 1 , wherein the plasma-affected vaporized solvent and the non-plasma-affected vaporized solvent are each introduced into the process chamber with a feed gas.

3. The method of claim 1 , wherein the plasma-affected vaporized solvent is introduced into the process chamber via a plasma chamber, the plasma chamber being separated from the process chamber by a separation grid.

4. The method of claim 3 , wherein the plasma chamber includes a radio frequency (RF) plasma source operable to generate a plasma prior to introducing the plasma-affected vaporized solvent into the process chamber.

5. The method of claim 1 , wherein the plasma-affected vaporized solvent and the non-plasma-affected vaporized solvent are each vaporized by bubbling a gas through a liquid solvent or passing a gas over a liquid solvent.

6. The method of claim 1 , wherein a plasma is generated in a plasma chamber, and the non-plasma-effected vaporized solvent is introduced directly into the process chamber at a location downstream of the plasma chamber.

7. The method of claim 1 , wherein the method is used for removing a photoresist or for removing post-etch residue.

8. The method of claim 1 , wherein the workpiece includes a silicon (Si), germanium (Ge), and/or SiGe material.

Assignees

• Mattson Tech Inc
• Beijing E Town Semiconductor Tech Co Ltd
• Beijing E Town Semiconductor Co Ltd

Inventors

• Meng Shuang
• Ma Shawming
• Yang Michael X

Classifications

• H10P72/0471

  comprising at least one ion or electron beam chamber · CPC title

• H10P72/0404

  for general liquid treatment, e.g. etching followed by cleaning · CPC title

• H10P70/20 Primary

  Cleaning during device manufacture · CPC title

• H01J37/32357 Primary

  Generation remote from the workpiece, e.g. down-stream · CPC title

• H01J37/32449

  Gas control, e.g. control of the gas flow · CPC title