Device for providing gas to a plasma chamber and a plasma processing device including the same

Patent metadata

Field	Value
Publication number	US-11289309-B2
Application number	US-201916407988-A
Country	US
Kind code	B2
Filing date	May 9, 2019
Priority date	Oct 31, 2018
Publication date	Mar 29, 2022
Grant date	Mar 29, 2022

Abstract

A plasma processing device is provided with a chamber including a space that is configured to perform a treatment process for a wafer. A supporting member is disposed inside of the chamber and configured to support the wafer. A gas supply unit is configured to inject a mixed gas in different directions toward the supporting member. The pressure of the mixed gas is increased by adding inert gas to reactive gas.

First claim

What is claimed is:

1. A plasma processing device, comprising:
a chamber including a space that is configured to perform a treatment process for a wafer;
a supporting member disposed inside of the chamber and configured to support the wafer; and
a gas supply unit including an inert gas supply unit supplying inert gas, and a gas ratio controller supplying reactive gas and controlling a supply amount of the reactive gas, and configured to inject a mixed gas from a first portion of the chamber that is above the supporting member in different directions toward the supporting member;
a gas flow controller supplying low reactive gas or inert gas from a second portion of the chamber that is below the supporting member; and
a gas discharge port disposed within the second portion of the chamber and configured to discharge the low reactive gas or inert gas from the chamber,
wherein the pressure of the mixed gas is controlled by adding inert gas to reactive gas, and
wherein the gas discharge port discharges the low reactive gas or inert gas from a bottom of the second portion of the chamber in a direction away from the supporting member and the gas flow controller supplies the low reactive gas or inert gas to the second portion of the chamber in a direction perpendicular to the direction that the gas discharge port discharges the low reactive gas or inert gas from the chamber.

2. The plasma processing device of claim 1 , wherein the gas supply unit includes an inert gas pressure controller controlling supply pressure of the inert gas.

3. The plasma processing device of claim 2 , wherein the gas supply unit further includes a backflow preventing portion disposed between the gas ratio controller and an intersection of an inert gas supply line and a reactive gas supply line to prevent the inert gas from flowing toward the gas ratio controller.

4. The plasma processing device of claim 1 , wherein the gas supply unit includes:
a first injection portion disposed at a first position of the chamber in which the mixed gas is injected into the chamber; and
a second injection portion disposed at a second position of the chamber in which the mixed gas is injected into the chamber.

5. The plasma processing device of claim 4 , wherein the first injection portion injects mixed gas in a first direction and a second direction different from the first direction, and wherein the second injection portion injects mixed gas in a third direction, different from the first direction and the second direction.

6. The plasma processing device of claim 4 , further comprising a temperature controller coupled to a mixed gas supply line, wherein the mixed gas supply line is connected to the first injection portion and/or the second injection portion.

7. The plasma processing device of claim 4 , further comprising a flow rate controller coupled to at least one of the first injection portion and the second injection portion,
wherein the first injection portion and the second injection portion each include an inlet hole, and
wherein the flow rate controller controls a size of the inlet hole of at least one of the first injection portion and the second injection portion.

8. A device for providing gas to a plasma chamber, comprising:
an inert gas supply unit supplying inert gas;
a gas ratio controller supplying reactive gas, and controlling a supply amount of the reactive gas;
an inert gas supply line extended from the inert gas supply unit;
a reactive gas supply line extended from the gas ratio controller;
a mixed gas supply line connecting the inert gas supply line to the reactive gas supply line to supply a mixed gas to a mixed gas injection portion disposed in a first portion of a chamber that is above a supporting member configured to support a wafer;
a gas flow controller supplying low reactive gas or inert gas from a second portion of the chamber that is below the supporting member;
a gas discharge port disposed within the second portion of the chamber and configured to discharge the low reactive gas or inert gas from the chamber,
wherein the gas discharge port discharges the low reactive gas or inert pas from a bottom of the second portion of the chamber in a direction away from the supporting member and the gas flow controller supplies the low reactive as or inert gas to the second portion of the chamber in a direction perpendicular to the direction that the gas discharge port discharges the low reactive gas or inert gas from the chamber.

9. The device for providing gas to a plasma chamber of claim 8 , wherein each of the inert gas supply line, the reactive gas supply line, the mixed gas injection portion, and the mixed gas supply line are provided in plural, and
wherein at least one of the plurality of mixed gas injection portions injects the mixed gas supplied from the plurality of mixed gas supply lines into the chamber in different directions.

10. The device for providing gas to a plasma chamber of claim 9 , further comprising: an inert gas pressure controller coupled to at least one among the plurality of inert gas supply lines to control supply pressure of the inert gas.

11. The device for providing gas to a plasma chamber of claim 9 , further comprising: a backflow preventing portion coupled to at least one of the plurality of reactive gas supply lines to prevent the inert gas from flowing toward the gas ratio controller.

12. The device for providing gas to a plasma chamber of claim 9 , further comprising: a temperature controller coupled to at least one of the plurality of mixed gas supply lines to control a temperature of the mixed gas.

13. The device for providing gas to a plasma chamber of claim 9 , wherein the mixed gas injection portions each include an inlet hole, wherein a flow rate controller is coupled to the least one of the plurality of mixed gas injection portions to control a size of the inlet hole.

14. The device for providing gas to a plasma chamber of claim 9 , further comprising a gas discharge port disposed within the second portion of the chamber.

15. The device for providing gas to a plasma chamber of claim 9 , wherein at least one among the plurality of mixed gas injection portions is disposed in an upper portion of the chamber, and at least one among the plurality of mixed gas injection portions is disposed in a side portion of the chamber.

16. The device for providing gas to a plasma chamber of claim 15 , wherein the at least one mixed gas injection portion disposed in an upper portion of the chamber injects mixed gas supplied from two mixed gas supply lines of the plurality of mixed gas supply lines in two or more different directions.

17. A plasma processing device, comprising:
a chamber including a first and second space in which a process for a wafer supported by a supporting member is performed in the first space, wherein the first space and the second space are not completely isolated from each other, and wherein the first space and the second space are separated by the supporting member;
a first gas supply unit injecting a mixed gas in different directions in the first space, wherein a pressure of the mixed gas is controlled by adding inert gas to reactive gas;
a second gas supply unit for injecting low reactive gas or inert gas into the second space; and
a gas discharge port disposed within the second space and configured to discharge the low reactive gas or inert gas from the chamber,
wherein the gas discharge port discharges the low reactive gas or inert gas from a bottom of the second space in a direction away from the supporting member and the second

Assignees

• Samsung Electronics Co Ltd

Inventors

• Kim Hyung Jun
• Kim Kwang Nam
• Kim Sung Yeon
• Sun Jong Woo
• Oh Sang Rok
• Hong Jung Pyo

Classifications

• H10P72/0402

  Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence) · CPC title

• H01J37/3244

  Gas supply means · CPC title

• H01J37/32449 Primary

  Gas control, e.g. control of the gas flow · CPC title

• H01J37/32082

  Radio frequency generated discharge (H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence) · CPC title

• H01J37/321

  the radio frequency energy being inductively coupled to the plasma · CPC title