Resist underlayer film-forming composition

Patent metadata

Field	Value
Publication number	US-11287741-B2
Application number	US-201816605246-A
Country	US
Kind code	B2
Filing date	Apr 27, 2018
Priority date	May 2, 2017
Publication date	Mar 29, 2022
Grant date	Mar 29, 2022

Abstract

A composition for forming a resist underlayer film that functions as an anti-reflective coating during exposure and can be embedded in a recess having a narrow space and a high aspect ratio, and has excellent resistance to an aqueous hydrogen peroxide solution. A resist underlayer film-forming composition containing a resin, a compound of the following Formula (1 a ) or (1 b ):

wherein X is carbonyl group or methylene group, 1 and m are each independently an integer of 0 to 5 and satisfy a relational expression of 3≤1+m 10, and n is an integer of 2 to 5, and a solvent, wherein the compound of Formula (1 a ) or (1 b ) is contained in an amount of 0.01% by mass to 60% by mass relative to the amount of the resin.

First claim

The invention claimed is:

1. A resist underlayer film-forming composition containing
a resin, wherein the resin is selected from the group consisting of a polyester, a polyether, a novolac resin, and a maleimide resin, and excluding acrylic resin and methacrylic resin,
a compound of Formula (1a) or (1b):

wherein X is a carbonyl group or a methylene group, 1 and m are each independently an integer of 0 to 5 and satisfy a relational expression of 3≤1+m 10, and n is an integer of 2 to 5, wherein in at least one benzene ring of the compound of Formula (1a), a phenolic hydroxy group is positioned at two or more adjacent carbon atoms, and in a benzene ring of the compound of Formula (1b), a phenolic hydroxy group is positioned at two or more adjacent carbon atoms, and
a solvent,
wherein the compound of Formula (1a) or (1b) is contained in an amount of 0.01% by mass to 60% by mass relative to the amount of the resin in the composition.

2. The resist underlayer film-forming composition according to claim 1 , wherein in the compound of Formula (1a), 1 and m are each 3, and in the compound of Formula (1b), n is 3.

3. The resist underlayer film-forming composition according to claim 1 , wherein the resin is a copolymer having no substituent containing an epoxy ring or an oxetane ring.

4. A method for manufacturing a semiconductor element comprising the steps of:
applying the resist underlayer film-forming composition according to claim 1 to a semiconductor substrate having a surface having a recess and optionally having an inorganic film on the surface;
baking the resist underlayer film-forming composition to form a resist underlayer film in at least the recess; and
forming a resist pattern on the resist underlayer film.

5. The method for manufacturing a semiconductor element according to claim 4 , wherein the semiconductor substrate has a trench having a width of 0.001 μm to 0.10 μm and an aspect ratio of 1 to 100.

6. A method for forming a pattern comprising the steps of:
forming a resist underlayer film from the resist underlayer film-forming composition according to claim 1 on a semiconductor substrate optionally having an inorganic film on a surface;
forming a resist pattern on the resist underlayer film;
dry etching the resist underlayer film using the resist pattern as a mask to expose the inorganic film or a surface of the semiconductor substrate; and
wet etching the inorganic film or the semiconductor substrate with an aqueous hydrogen peroxide solution using the resist underlayer film after the dry etching as a mask and washing the inorganic film or the semiconductor substrate.

Assignees

• Nissan Chemical Corp

Inventors

• Ogata Hiroto
• Hashimoto Yuto
• Tamura Mamoru
• Kishioka Takahiro

Classifications

• H10P76/204

  of organic photoresist masks · CPC title

• H10P50/695

  characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask · CPC title

• H10P50/692

  characterised by their composition, e.g. multilayer masks or materials · CPC title

• H10P50/642

  Chemical etching · CPC title

• H10P50/287

  by chemical means · CPC title