Use of a chemical mechanical polishing (CMP) composition for polishing of cobalt and / or cobalt alloy comprising substrates

Patent metadata

Field	Value
Publication number	US-11286402-B2
Application number	US-201515538334-A
Country	US
Kind code	B2
Filing date	Dec 11, 2015
Priority date	Dec 22, 2014
Publication date	Mar 29, 2022
Grant date	Mar 29, 2022

Abstract

Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) a triazine derivative of the general formula (I) wherein R1, R2, R3, R4, R5 and R6 are independently from each other H, methyl, ethyl, propyl, butyl, pentyl, C2-C10-alkylcarboxylic acid, hydroxymethyl, vinyl or allyl (C) at least one amino acid, (D) at least one oxidizer (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10.

First claim

The invention claimed is:

1. A method for chemical mechanical polishing (CMP) a substrate with a CMP composition comprising:
(A) inorganic particles,
(B) a triazine derivative selected from the group consisting of 6,6′,6″-(1,3,5-Triazine-2,4,6-triyltriimino)trihexanoic acid, {[bis(dimethylamino)-1,3,5-triazin-2-yl)](methyl)amino}-methanol, ({bis[(hydroxymethyl)amino)]-1,3,5-triazin-2-yl}amino)methanol, 2,4-diamino-6-diallylamino-1,3,5-triazine, ({bis[bis(hydroxymethyl)amino]-1,3,5-triazin-2-yl}(hydroxyl-methyl)amino)methanol, N2,N4-di-tert-butyl-1,3,5-triazine-2,4,6-triamine and N2,N4-bis(prop-2-en-1-yl)-1,3,5-triazine-2,4,6-triamine,
(C) at least one amino acid,
(D) at least one oxidizer, and
(E) an aqueous medium
wherein the CMP composition has a pH of from 7 to 10, and
wherein the substrate comprises (i) cobalt and/or (ii) a cobalt alloy, the method comprising polishing the substrate.

2. The method according to claim 1 , wherein the inorganic particles (A) are colloidal inorganic particles.

3. The method according to claim 2 , wherein the colloidal inorganic particles are silica particles.

4. The method according to claim 1 , wherein the at least one amino acid (C) is glycine, alanine, leucine, valine, cysteine, serine, praline or a salt thereof.

5. The method according to claim 1 , wherein the total amount of the at least one amino acid (C) is in the range of from 0.1 wt.-% to 2.25 wt.-% based on the total weight of the CMP composition.

6. The method according to claim 1 , wherein the oxidizer comprises a peroxide.

7. The method according to claim 1 , wherein the oxidizer is hydrogen peroxide.

8. The method according to claim 1 , wherein the static etch rate (SER) of cobalt is below 100 Å/min.

9. The method according to claim 1 , wherein the cobalt material removal rate (MRR) is in a range of from 300 to 6000 Å/min.

10. The process according to claim 1 , comprising polishing the (i) cobalt and/or (ii) a cobalt alloy on the substrate.

11. The method according to claim 1 , wherein the triazine derivative is 6,6′,6″-(1,3,5-Triazine-2,4,6-triyltriimino)trihexanoic acid.

12. The method according to claim 11 , wherein the at least one amino acid (C) is glycine.

Assignees

• Basf Se

Inventors

• Reichardt Robert
• Siebert Max
• Lan Yongqing
• Lauter Michael
• Usman Ibrahim Sheik Ansar
• Golzarian Reza
• Guevenc Haci Osman
• Proelss Julian
• Leunissen Leonardus

Classifications

• H10P50/00

  Etching of wafers, substrates or parts of devices · CPC title

• C09K3/1463

  Aqueous liquid suspensions · CPC title

• C09G1/02 Primary

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title

• C09G1/04

  Aqueous dispersions (C09G1/02 takes precedence) · CPC title

• C09K13/00

  Etching, surface-brightening or pickling compositions (for glass C03C15/00, {C03C25/66; for mortars, concrete, artificial or natural stone or ceramics C04B41/5338}; for metallic material C23F, C23G1/00, C25F1/00; {for semi-conductors H10P52/40}) · CPC title