Methods and apparatus of high moment free layers for magnetic tunnel junctions

Patent metadata

Field	Value
Publication number	US-11283006-B1
Application number	US-202016867380-A
Country	US
Kind code	B1
Filing date	May 5, 2020
Priority date	May 5, 2020
Publication date	Mar 22, 2022
Grant date	Mar 22, 2022

Abstract

The present disclosure generally relates to magnetoresistive device apparatus and methods. The magnetoresistive device includes a read head. The read head is a tunneling magnetoresistive reader that includes a multilayer free layer structure. The multilayer structure includes one or more layers of Co or FCC FeCo sandwiched between a BCC CoFe50 nanolayer and an amorphous CoFeB layer. The one or more layers of Co or FCC FeCo create nanocrystalline disorder that allows the thickness of the amorphous CoFeB layer to be reduced while retaining or even improving TMR and reducing the interlayer coupling field.

First claim

What is claimed is:

1. A magnetic sensor, comprising:
a barrier layer;
a free layer above the barrier layer, the free layer comprising:
a ferromagnetic nanolayer on the barrier layer,
a boron layer above the ferromagnetic nanolayer, the boron layer comprising one or more of CoFeB or CoB, and
one or more layers between the ferromagnetic nanolayer and the boron layer, the one or more layers comprising one or more of Co or CoFe, wherein the one or more layers between the ferromagnetic nanolayer and the boron layer comprise:
a first layer comprising CoFe; and
a second layer comprising Co; and

a non-ferromagnetic capping layer above the free layer.

2. The magnetic sensor of claim 1 , wherein the first layer of the one or more layers between the ferromagnetic nanolayer and the boron layer comprises CoFe with Fe having an atomic percent content of 30% or less.

3. The magnetic sensor of claim 2 , wherein the atomic percent content of Fe of the one or more layers is about 10%.

4. The magnetic sensor of claim 1 , wherein the ferromagnetic nanolayer comprises CoFe.

5. The magnetic sensor of claim 4 , wherein the ferromagnetic nanolayer comprises CoFe with Fe having an atomic percent content of about 50%.

6. The magnetic sensor of claim 1 , wherein the free layer further comprises an insertion layer above the boron layer, and one or more boron layers or a layer having negative magnetorestriction disposed between the insertion layer and the non-ferromagnetic capping layer.

7. The magnetic sensor of claim 1 , wherein the boron layer is amorphous.

8. The magnetic sensor of claim 1 , wherein the barrier layer comprises MgO.

9. A magnetic recording head comprising the magnetic sensor of claim 1 .

10. A data storage device comprising the magnetic recording head of claim 9 .

11. A magnetic resistive random memory (MRAM) device comprising the magnetic sensor of claim 1 .

12. A spintronic device comprising the magnetic sensor of claim 1 .

13. The magnetic sensor of claim 1 , further comprising a ferromagnetic reference layer, wherein the barrier layer is disposed on and in contact with the ferromagnetic reference layer.

14. A magnetic sensor, comprising:
a seed layer;
a barrier layer above the seed layer;
a free layer above the barrier layer, the free layer comprising:
a ferromagnetic nanolayer on the barrier layer, the ferromagnetic nanolayer comprising a crystalline structure that is BCC;
an amorphous layer above the ferromagnetic nanolayer,
one or more layers between the ferromagnetic nanolayer and the amorphous layer, the one or more layers comprising a crystalline structure that is FCC, wherein the one or more layers between the ferromagnetic nanolayer and the amorphous layer comprise:
a first layer comprising CoFe; and
a second layer comprising Co; and

a non-ferromagnetic capping layer above the free layer.

15. The magnetic sensor of claim 14 , wherein the crystalline structure of the one or more layers between the ferromagnetic nanolayer and the amorphous layer is grown as FCC or HCP on the ferromagnetic nanolayer from a material having a crystalline structure that is BCC.

16. The magnetic sensor of claim 14 , wherein the amorphous layer comprises one or more of CoFeB or CoB, and the ferromagnetic nanolayer comprises CoFe.

17. A magnetic recording head comprising the magnetic sensor of claim 14 .

18. A data storage device comprising the magnetic recording head of claim 17 .

19. A magnetic resistive random memory (MRAM) device comprising the magnetic sensor of claim 14 .

20. A spintronic device comprising the magnetic sensor of claim 14 .

21. The magnetic sensor of claim 14 , wherein the first layer of the one or more layers between the ferromagnetic nanolayer and the amorphous layer comprises CoFe with Fe having an atomic percent content of about 10%.

22. A magnetic sensor, comprising:
a seed layer;
a barrier layer above the seed layer;
a free layer above the barrier layer, the free layer comprising:
a ferromagnetic nanolayer on the barrier layer;
a boron layer above the ferromagnetic nanolayer, the boron layer comprising one or more of CoFeB or CoB, and the boron layer comprising a thickness of 15 Angstroms or less,
one or more layers between the ferromagnetic nanolayer and the boron layer, the one or more layers each comprising a thickness of 10 Angstroms or less, wherein the one or more layers between the ferromagnetic nanolayer and the boron layer comprise:
a first layer comprising CoFe; and
a second layer comprising Co; and

a non-ferromagnetic capping layer above the free layer.

23. The magnetic sensor of claim 22 , wherein the thickness of the one or more layers between the ferromagnetic nanolayer and the boron layer is a ratio relative to the thickness of the boron layer, and the ratio is at least 0.25.

24. The magnetic sensor of claim 22 , wherein the ferromagnetic nanolayer comprises a thickness of less than 10 Angstroms.

25. A magnetic recording head comprising the magnetic sensor of claim 22 .

26. A data storage device comprising the magnetic recording head of claim 25 .

27. A magnetic resistive random memory (MRAM) device comprising the magnetic sensor of claim 22 .

28. A spintronic device comprising the magnetic sensor of claim 22 .

29. The magnetic sensor of claim 22 , wherein the free layer further comprises an insertion layer above the boron layer, and one or more boron layers or a layer having negative magnetorestriction disposed between the insertion layer and the non-ferromagnetic capping layer.

Assignees

• Western Digital Tech Inc

Inventors

• Freitag James Mac
• Gao Zheng

Classifications

• H01F10/3295

  Spin-exchange coupled multilayers wherein the magnetic pinned or free layers are laminated without anti-parallel coupling within the pinned and free layers · CPC title

• H01F10/3254

  the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ] · CPC title

• H01F10/3204

  Exchange coupling of amorphous multilayers · CPC title

• H01F10/3272

  by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets · CPC title

• H10N50/85

  Materials of the active region · CPC title