Semiconductor device comprising halopalladate

Patent metadata

Field	Value
Publication number	US-11282973-B2
Application number	US-201816606008-A
Country	US
Kind code	B2
Filing date	Apr 20, 2018
Priority date	Apr 20, 2017
Publication date	Mar 22, 2022
Grant date	Mar 22, 2022

Abstract

The present invention relates to a semiconductor device comprising a semiconducting material, wherein the semiconducting material comprises a halometallate compound comprising: (a) cesium; (b) palladium; and (c) one or more halide anions [X]. The invention also relates to a layer comprising the semiconducting material. The invention further relates to a process for producing a halometallate compound of formula (IV): [A]2[MIV][X]6, which process uses a H[X] and a compound comprising a sulfoxide group.

First claim

The invention claimed is:

1. A semiconductor device comprising a semiconducting material, wherein the semiconducting material comprises a halometallate compound comprising:
(a) cesium;
(b) palladium; and
(c) one or more halide anions [X],
and wherein the semiconductor device is an optoelectronic device.

2. A semiconductor device according to claim 1 , wherein the one or more halide anions [X] are selected from Br − , Cl − and I − .

3. A semiconductor device according to claim 1 , wherein the semiconducting material comprises a halometallate compound of formula (I):
[A] a [M] b [X] c   (I),

wherein:
[A] comprises Cs + ,
[M] comprises Pd 2+ or Pd 4+ ;
[X] comprises the one or more halide anions;
a is from 1 to 4;
b is from 1 to 2; and
c is from 3 to 8.

4. A semiconductor device according to claim 1 , wherein the semiconducting material comprises a halometallate compound of formula (II):
[A] 2 [M][X] 6   (II),

wherein:
[A] comprises Cs + ;
[M] comprises Pd 4+ ;
[X] comprises the one or more halide anions.

5. A semiconductor device according to claim 1 , wherein the semiconducting material comprises a halometallate compound selected from the group consisting of Cs 2 PdBr 6 , Cs 2 PdCl 6 and Cs 2 PdI 6 .

6. A semiconductor device according to claim 1 , wherein the semiconducting material comprises a halometallate compound of formula (III):
[A] 2 [M][X] 4   (III),

wherein:
[A] comprises Cs + ;
[M] comprises Pd 2+ ;
[X] comprises the one or more halide anions.

7. A semiconductor device according to claim 6 , wherein the semiconducting material comprises a halometallate compound selected from the group consisting of Cs 2 PdBr 4 , Cs 2 PdCl 4 and Cs 2 PdI 4 .

8. A semiconductor device according to claim 1 , wherein the semiconductor device is a photovoltaic device, a light-emitting device or a photodetector.

9. A semiconductor device according to claim 1 , which semiconductor device comprises a layer of the semiconducting material.

10. A semiconductor device according to claim 1 , which semiconductor device comprises:
an n-type region comprising at least one n-type layer;
a p-type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region:
a layer of the semiconducting material.

11. A semiconductor device according to claim 1 , which semiconductor device comprises a layer of the semiconducting material without open porosity.

12. A semiconductor device according to claim 1 , wherein the semiconducting material is a photoactive material.

Assignees

• Univ Oxford Innovation Ltd

Inventors

• Sakai Nobuya
• Haghighirad Amir Abbas
• Snaith Henry James

Classifications

• H10K30/50

  Photovoltaic [PV] devices · CPC title

• H10H20/822

  Materials of the light-emitting regions · CPC title

• H10F77/12 Primary

  Active materials · CPC title

• C01P2002/82

  by IR- or Raman-data · CPC title

• C01P2002/72

  by d-values or two theta-values, e.g. as X-ray diagram · CPC title