Semiconductor device, inverter circuit, driving device, vehicle, and elevator

Patent metadata

Field	Value
Publication number	US-11276774-B2
Application number	US-201916549089-A
Country	US
Kind code	B2
Filing date	Aug 23, 2019
Priority date	Jan 4, 2019
Publication date	Mar 15, 2022
Grant date	Mar 15, 2022

Abstract

An embodiment of a semiconductor device including a silicon carbide layer having a first and a second planes; a first silicon carbide region of first conductivity type in the silicon carbide layer; a second silicon carbide region of second conductivity type in the silicon carbide layer between the first silicon carbide region and the first plane; a third silicon carbide region of the first conductivity type in the silicon carbide layer located between the second silicon carbide region and the first plane; a first electrode located on a side of the first plane; a second electrode located on a side of the second plane; a gate electrode; an aluminum nitride layer containing an aluminum nitride crystal between the second silicon carbide region and the gate electrode; and an insulating layer between the aluminum nitride layer and the gate electrode and having a wider band gap than the aluminum nitride layer.

First claim

What is claimed is:

1. A semiconductor device comprising:
a silicon carbide layer having a first plane and a second plane facing the first plane;
a first silicon carbide region of a first conductivity type existing in the silicon carbide layer;
a second silicon carbide region of a second conductivity type existing in the silicon carbide layer and being located between the first silicon carbide region and the first plane;
a third silicon carbide region of the first conductivity type existing in the silicon carbide layer and being located between the second silicon carbide region and the first plane;
a first electrode located on a side of the silicon carbide layer closer to the first plane;
a second electrode located on a side of the silicon carbide layer closer to the second plane;
a gate electrode;
a crystalline aluminum nitride layer located between the second silicon carbide region and the gate electrode, the crystalline aluminum nitride layer being in direct contact with the second silicon carbide region; and
an insulating layer located between the crystalline aluminum nitride layer and the gate electrode and having a wider band gap than the crystalline aluminum nitride layer,
wherein a thickness of the crystalline aluminum nitride layer is larger than 30 nm.

2. The semiconductor device according to claim 1 , wherein a face of the second silicon carbide region being in contact with the aluminum nitride layer is a plane inclined at an angle of 0 degrees to 10 degrees with respect to an m-face or a plane inclined at an angle of 0 degrees to 10 degrees with respect to an a-face.

3. The semiconductor device according to claim 1 , wherein a thickness of the crystalline aluminum nitride layer is equal to or smaller than 60 nm.

4. The semiconductor device according to claim 1 , wherein the second conductivity type impurity concentration of the second silicon carbide region is 5×10 17 cm −3 or more.

5. The semiconductor device according to claim 1 , wherein the second silicon carbide region includes a first portion and a second portion located between the first portion and the aluminum nitride layer, the second portion having a second conductivity type impurity concentration lower than a second conductivity type impurity concentration of the first portion.

6. The semiconductor device according to claim 1 , wherein, in a case where the first conductivity type is n-type and the second conductivity type is p-type, an angle between a c-axis direction of the aluminum nitride crystal contained in the crystalline aluminum nitride layer and a direction from the second silicon carbide region toward the gate electrode is less than 90 degrees.

7. The semiconductor device according to claim 6 , wherein the angle is 45 degrees or less.

8. The semiconductor device according to claim 1 , wherein the crystalline aluminum nitride layer contains boron (B).

9. The semiconductor device according to claim 1 , wherein the crystalline aluminum nitride layer contains at least one element selected from a group consisting of scandium (Sc), yttrium (Y), and lanthanides (La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu).

10. The semiconductor device according to claim 1 , wherein a silicon oxide equivalent thickness of the insulating layer is larger than 10 nm and equal to or smaller than 50 nm.

11. The semiconductor device according to claim 1 , wherein the insulating layer contains a silicon oxide.

12. The semiconductor device according to claim 1 ,
wherein the silicon carbide layer has a trench, and
wherein the gate electrode is located in the trench.

Assignees

• Toshiba Kk

Inventors

• Shimizu Tatsuo
• Oshima Toshiyuki
• Iijima Ryosuke
• Yoshida Hisashi
• Kimura Shigeya

Classifications

• H10D30/662

  having a drift region having a doping concentration that is higher between adjacent body regions relative to other parts of the drift region · CPC title

• H10D64/693

  the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials · CPC title

• H10D64/513

  within recesses in the substrate, e.g. trench gates, groove gates or buried gates · CPC title

• H10D62/8325

  Silicon carbide · CPC title

• H10D30/668

  having trench gate electrodes, e.g. UMOS transistors · CPC title