Semiconductor device

Patent metadata

Field	Value
Publication number	US-11276773-B2
Application number	US-202016950047-A
Country	US
Kind code	B2
Filing date	Nov 17, 2020
Priority date	Feb 26, 2020
Publication date	Mar 15, 2022
Grant date	Mar 15, 2022

Abstract

A semiconductor device includes: first diode trench gates extending along a first main surface from a first end side of a cell region toward a second end side thereof opposite to the first end side, the first diode trench gates being disposed adjacent to each other at a first spacing; a boundary trench gate connected to end portions of the first diode trench gates and extending in a direction intersecting a direction of extension of the first diode trench gates; and second diode trench gates having end portions connected to the boundary trench gate and extending toward the second end side of the cell region.

First claim

What is claimed is:

1. A semiconductor device comprising:
a cell region including a drift layer of a first conductivity type provided between a first main surface and a second main surface opposite to the first main surface;
a termination region surrounding the cell region and including the drift layer between the first main surface and the second main surface;
a plurality of first trench gates including a plurality of first trench electrodes provided in a plurality of first trenches, with an insulation film therebetween, in opposed relation to the drift layer, the first trenches being provided to extend along the first main surface from a first end side of the cell region toward a second end side thereof opposite to the first end side, the first trenches being disposed adjacent to each other at a first spacing;
a boundary trench gate including a boundary trench electrode provided in a boundary trench, with an insulation film therebetween, in opposed relation to the drift layer, the boundary trench being provided to extend in a direction intersecting a direction of extension of the first trenches, the boundary trench being connected to end portions of the respective first trenches, the boundary trench electrode being electrically connected to the first trench electrodes; and
a plurality of second trench gates including a plurality of second trench electrodes provided in a plurality of second trenches, with an insulation film therebetween, in opposed relation to the drift layer, each of the second trenches having an end portion connected to the boundary trench, the second trenches being provided to extend toward the second end side of the cell region, the second trenches being disposed adjacent to each other at a second spacing different from the first spacing, the second trench electrodes being electrically connected to the boundary trench electrode.

2. The semiconductor device according to claim 1 , wherein
the second spacing is greater than the first spacing.

3. The semiconductor device according to claim 1 , wherein
the termination region includes:
a termination well layer of a second conductivity type provided between the first main surface and the drift layer; and
a termination collector layer of the second conductivity type provided between the second main surface and the drift layer.

4. The semiconductor device according to claim 1 , wherein
the cell region includes:
an IGBT region having a base layer of the second conductivity type provided between the first main surface and the drift layer, and a collector layer of the second conductivity type provided between the second main surface and the drift layer; and
a diode region having an anode layer of the second conductivity type provided between the first main surface and the drift layer, and a cathode layer of the first conductivity type provided between the second main surface and the drift layer.

5. The semiconductor device according to claim 4 , wherein
the first trench gates, the second trench gates, and the boundary trench gate are provided in the diode region.

6. The semiconductor device according to claim 4 , wherein
the first trench gates, the second trench gates, and the boundary trench gate are provided in the IGBT region.

7. The semiconductor device according to claim 1 , wherein
the first trench gates have respective end portions positioned so as not to be opposed to end portions of the second trench gates, with the boundary trench gate therebetween.

8. The semiconductor device according to claim 1 , wherein
the boundary trench gate is connected to the first trench gates or the second trench gates in a T-shaped configuration in all connection portions to the first trench gates or the second trench gates.

9. The semiconductor device according to claim 1 , further comprising:
a third trench gate including a third trench electrode provided in a third trench, with an insulation film therebetween, in opposed relation to the drift layer, the third trench being provided to extend in a direction intersecting a direction of extension of the first trenches, the third trench connecting adjacent ones of the first trenches; and
a fourth trench gate including a fourth trench electrode provided in a fourth trench, with an insulation film therebetween, in opposed relation to the drift layer, the fourth trench being provided to extend in a direction intersecting a direction of extension of the second trenches, the fourth trench connecting adjacent ones of the second trenches.

Assignees

• Mitsubishi Electric Corp

Inventors

• Soneda Shinya
• Harada Kenji
• Otsuka Kakeru

Classifications

• H10D62/128

  Anode regions of diodes · CPC title

• H10D62/102

  Constructional design considerations for preventing surface leakage or controlling electric field concentration · CPC title

• H10D8/422

  PN diodes having the PN junctions in mesas · CPC title

• H10D12/481 Primary

  having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs · CPC title

• H10D64/117

  Recessed field plates, e.g. trench field plates or buried field plates · CPC title