Array substrate and manufacturing method thereof, display panel and display device

Patent metadata

Field	Value
Publication number	US-11275200-B2
Application number	US-201916632030-A
Country	US
Kind code	B2
Filing date	Jul 24, 2019
Priority date	Jul 24, 2018
Publication date	Mar 15, 2022
Grant date	Mar 15, 2022

Abstract

An array substrate and a manufacturing method thereof, a display panel and a display device are disclosed. The array substrate includes a transparent base substrate and an electrode structure provided on the transparent base substrate, the electrode structure including an anti-reflective layer and a first electrode layer, the anti-reflective layer being located between the first electrode layer and the transparent base substrate.

First claim

The invention claimed is:

1. An array substrate, comprising:
a transparent base substrate; and
an electrode structure, provided on the transparent base substrate, the electrode structure comprising:
a first electrode layer; and
an anti-reflective layer, the anti-reflective layer being located between the first electrode layer and the transparent base substrate,
wherein the anti-reflective layer comprises a first film layer and a second film layer stacked on each other; the first film layer is located between the first electrode layer and the second film layer; the first film layer and the second film layer differ in refractive index; and the first film layer is set such that light of a predetermined wavelength reflected at an interface between the first film layer and the second film layer and light reflected on a surface of the first electrode layer that faces the anti-reflective layer perform destructive interference.

2. The array substrate according to claim 1 , wherein,
the anti-reflective layer comprises a plurality of anti-reflective film groups sequentially arranged on a side of the first electrode layer that faces the transparent base substrate,
each anti-reflective film group comprises a first film layer closer to the first electrode layer and a second film layer closer to the transparent base substrate; the first film layer and the second film layer differ in refractive index; and the first film layer is set such that light of a predetermined wavelength reflected at an interface between the first film layer and the second film layer and light reflected on a surface of the first electrode layer that faces the anti-reflective layer perform destructive interference.

3. An array substrate, comprising:
a transparent base substrate; and
an electrode structure, provided on the transparent base substrate, the electrode structure comprising:
a first electrode layer; and
an anti-reflective layer, the anti-reflective layer being located between the first electrode layer and the transparent base substrate,

wherein the anti-reflective layer comprises a first film layer and a second film layer stacked on each other; the first film layer is located between the first electrode layer and the second film layer; the second film layer is a partially transparent metal layer; the first film layer is a transparent layer; and the first film layer and the second film layer are set such that light of a predetermined wavelength reflected on a surface of the first electrode layer that faces the anti-reflective layer and light reflected on a surface of the partially transparent metal layer that is away from the first electrode layer perform destructive interference, and
light reflectivity of the first electrode layer is larger than light reflectivity of the second film layer.

4. The array substrate according to claim 3 , wherein,
a material of the first film layer comprises molybdenum oxide; and
a material of the second film layer comprises at least one of molybdenum and a niobium molybdenum alloy.

5. The array substrate according to claim 4 , further comprising:
a signal line;
a thin film transistor, comprising a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode, wherein the signal line and the gate electrode are set as the first electrode layer in the electrode structure, the active layer is provided on a side of the source electrode and the drain electrode that is close to the first electrode layer, and the gate insulating layer is provided between the first electrode layer and the active layer;
a pixel electrode, the pixel electrode being electrically connected with the drain electrode; and
a common electrode, the common electrode being located between the pixel electrode and the transparent base substrate, and a material of the common electrode being same as the material of the first film layer.

6. The array substrate according to claim 4 , further comprising:
a signal line;
a thin film transistor, comprising a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode; the signal line and the gate electrode being set as the first electrode layer in the electrode structure, the active layer is provided on a side of the source electrode and the drain electrode that is close to the first electrode layer, and the gate insulating layer is provided between the first electrode layer and the active layer; and
an organic light emitting device, the organic light emitting device comprising a first driving electrode, an organic light-emitting functional layer and a second driving electrode; the organic light-emitting functional layer being located between the first driving electrode and the second driving electrode, the first driving electrode being electrically connected with the drain electrode.

7. The array substrate according to claim 1 , wherein,
an orthographic projection of the first electrode layer on the transparent base substrate is located within an orthographic projection of the anti-reflective layer on the transparent base substrate; or an orthographic projection of the first electrode layer on the transparent base substrate coincides with an orthographic projection of the anti-reflective layer on the transparent base substrate.

8. A display panel, comprising the array substrate according to claim 1 .

9. The display panel according to claim 8 , further comprising:
a counter substrate, provided opposite to the array substrate, wherein a surface of the array substrate provided with the anti-reflective layer and the electrode structure faces the counter substrate; and
a black matrix, located on the counter substrate, wherein the black matrix is configured to shade at least a signal line on the array substrate, and the signal line is set as the first electrode layer in the electrode structure.

10. The display panel according to claim 8 , further comprising:
a counter substrate, provided opposite to the array substrate, wherein a surface of the array substrate provided with the anti-reflective layer and the electrode structure faces the counter substrate; and
a black matrix, located on the array substrate and on a display side of a display panel, wherein the black matrix is configured to shade at least a portion of a signal line and at least a portion of a thin film transistor on the array substrate that does not comprised in the first electrode layer in the electrode structure.

11. A display device, comprising the display panel according to claim 9 .

12. The display device according to claim 11 , further comprising a backlight source and a flexible circuit board, the backlight source being located on a side of the counter substrate that is away from the array substrate, and an end of the flexible circuit board that is away from the array substrate is located on a side of the backlight source that is away from the array substrate.

13. A manufacturing method of an array substrate, comprising:
providing a transparent base substrate;
forming an anti-reflective layer and a first electrode layer on the transparent base substrate to obtain an electrode structure,
wherein the anti-reflective layer is formed between the first electrode layer and the transparent base substrate,
wherein the forming the anti-reflective layer comprises:
forming a partially transparent metal material thin film on the base substrate as a second film layer, and
forming a transparent material thin film on a side of the second film layer that is away from the transparent base substrate as a first film layer,

wherein the first film layer and the second film layer are set such

Assignees

• Beijing Boe Display Tech Co
• Boe Technology Group Co Ltd

Inventors

• Wang Shoukun
• Guo Huibin
• Han Hao
• Fu Fangbin
• Jia Yihe
• Song Yongzhi
• Liu Zhichang
• Liu Jiantao

Classifications

• H10K59/8792

  comprising light absorbing layers, e.g. black layers · CPC title

• G02B1/115 Primary

  Multilayers · CPC title

• G02B1/11 Primary

  Anti-reflection coatings · CPC title

• H10D30/6739

  Conductor-insulator-semiconductor electrodes · CPC title

• H10D86/60

  wherein the TFTs are in active matrices · CPC title