Nano-rod spin orbit coupling based magnetic random access memory with shape induced perpendicular magnetic anisotropy

Patent metadata

Field	Value
Publication number	US-11264558-B2
Application number	US-201816128426-A
Country	US
Kind code	B2
Filing date	Sep 11, 2018
Priority date	Sep 11, 2018
Publication date	Mar 1, 2022
Grant date	Mar 1, 2022

Abstract

An apparatus is provided which comprises: a magnetic junction including: a stack of structures including: a first structure comprising a magnet with an unfixed perpendicular magnetic anisotropy (PMA) relative to an x-y plane of a device, wherein the first structure has a first dimension along the x-y plane and a second dimension in the z-plane, wherein the second dimension is substantially greater than the first dimension. The magnetic junction includes a second structure comprising one of a dielectric or metal; and a third structure comprising a magnet with fixed PMA, wherein the third structure has an anisotropy axis perpendicular to the plane of the device, and wherein the third structure is adjacent to the second structure such that the second structure is between the first and third structures; and an interconnect adjacent to the third structure, wherein the interconnect comprises a spin orbit material.

First claim

We claim:

1. An apparatus comprising:
a magnetic junction including:
a stack of structures including:
a first structure comprising a magnet with an unfixed perpendicular magnetic anisotropy (PMA) relative to an x-y plane of a device, wherein the first structure has a first dimension along the x-y plane and a second dimension in a z-plane, wherein the second dimension is substantially greater than the first dimension;
a second structure comprising one of a dielectric or metal; and
a third structure comprising a magnet with fixed PMA, wherein the third structure has an anisotropy axis perpendicular to the plane of the device, and

wherein the third structure is adjacent to the second structure such that the second structure is between the first and third structures; and

an interconnect adjacent to the first structure, wherein the interconnect comprises a spin orbit material.

2. The apparatus of claim 1 , wherein the first dimension is in a range of 5 to 20 nanometers, and wherein the second dimension is in a range of 10 to 50 nanometers.

3. The apparatus of claim 1 , wherein the first dimension is a radius of the first structure.

4. The apparatus of claim 1 , wherein the spin orbit material includes an antiferromagnetic (AFM) material which is doped with a doping material.

5. The apparatus of claim 4 , wherein the doping material includes one or more of: Pt, Ni, Co, or Cr.

6. The apparatus of claim 1 comprises a fourth structure adjacent to the interconnect such that the third and fourth structures are on opposite surfaces of the interconnect, wherein the fourth structure comprises a magnet with in-plane magnetization relative to the x-y plane of the device.

7. The apparatus of claim 1 , wherein the magnetic junction comprises:
a fifth structure between the first and second structures, wherein the fifth structure includes one or more of: Ru, Os, Hs, or Fe; or
a sixth structure between the second and third structures, wherein the sixth structure includes one or more of: Ru, Os, Hs, or Fe.

8. The apparatus of claim 1 , comprises: a seventh structure between the interconnect and the fourth structure, wherein the seventh structure includes an AFM material, and wherein the interconnect comprises a spin orbit material.

9. The apparatus of claim 8 , wherein the AFM material includes one of: Ir, Pt, Mn, Pd, or Fe.

10. The apparatus of claim 8 , wherein the AFM material is a quasi-two-dimensional triangular AFM including Ni (1-x) M x Ga 2 S 4 , where ‘M’ includes one of: Mn, Fe, Co or Zn.

11. The apparatus of claim 1 , wherein:
the first or third structures comprises a stack including a first material and a second material different from the first material;
the first material includes one of: Co, Ni, Fe, or a Heusler alloy;
the Heusler alloy includes one or more of Co, Cu, Fe, Ga, Ge, In, Mn, Al, In, Sb, Si, Sn, Ni, Pd, Ru, or V;
the second material includes one of: Pt, Pd, Ir, Ru, or Ni; and
wherein the first material has a thickness in a range of 0.6 nm to 2 nm, and wherein the second material has a thickness in a range of 0.1 nm to 3 nm.

12. The apparatus of claim 1 , wherein the dielectric comprises: Mg and O.

13. The apparatus of claim 1 , wherein the first or the third structures comprises a super lattice including a first material and a second material, wherein the first material includes one of: Co, Ni, Fe, or Heusler alloy; and wherein the second material includes one of: Pt, Pd, Jr, Ru, or Ni.

14. The apparatus of claim 1 , wherein the interconnect includes one or more or: β-Tantalum (β-Ta), Ta, β-Tungsten (β-W), W, Platinum (Pt), Copper (Cu) doped with elements including on of Iridium, Bismuth or elements of 3d, 4d, 5d and 4f, 5f periodic groups, Ti, S, W, Mo, Se, B, Sb, Re, La, C, P, La, As, Sc, O, Bi, Ga, Al, Y, In, Ce, Pr, Nd, F, Jr, Mn, Pd, or Fe.

15. The apparatus of claim 1 , wherein:
the interconnect comprises a spin orbit material which includes one of: a 2D material, a 3D material, an AFM material, or an AFM material doped with a doping material;
the 3D material is thinner than the 2D material; and
the doping material includes one of: Co, Fe, Ni, Mn, Ga, Fe, or Bct-Ru.

16. The apparatus of claim 1 , wherein the interconnect comprises a stack of layers, wherein one of the layers in the stack comprises an AFM material.

17. The apparatus of claim 1 , wherein the magnetic junction is one of a spin valve or a magnetic tunneling junction (MTJ).

18. The apparatus of claim 1 , wherein the magnet of the first structure is a paramagnet which includes one or more of: Pt, Pd, W, Ce, Al, Li, Mg, Na, Cr, Co, Dy, O, Er, Eu, Eu, Gd, Fe, Nd, K, Pr, Sm, Tb, Tm, or V.

19. The apparatus of claim 1 , wherein the magnet of the first structure is a paramagnet which comprises dopants which include one or more of: Ce, Cr, Mn, Nb, Mo, Tc, Re, Nd, Gd, Tb, Dy, Ho, Er, Tm, or Yb.

20. A system comprising:
a memory;
a processor coupled to the memory, the processor having a magnetic memory, which comprises:
a magnetic junction having a magnet with a first magnetization, wherein the magnetic junction comprises a structure having a first dimension along an x-y plane and a second dimension in a z-plane of a device, wherein the second dimension is substantially greater than the first dimension;
an interconnect adjacent to the structure of the magnetic junction, wherein the interconnect comprises a spin orbit material; and
a structure adjacent to the interconnect such that the magnetic junction and the structure are on opposite surfaces of the interconnect, wherein the structure comprises a magnet with a second magnetization substantially different from the first magnetization; and

a wireless interface to allow the processor to communicate with another device.

21. The system of claim 20 , wherein the first dimension is in a range of 5 to 20 nanometers, and wherein the second dimension is in a range of 10 to 50 nanometers.

22. An apparatus comprising:
a magnetic junction having a magnet with a first magnetization, wherein the magnetic junction comprises a structure having a first dimension along an x-y plane and a second dimension in a z-plane of a device, wherein the second dimension is substantially greater than the first dimension;
an interconnect adjacent to the magnetic junction, wherein the interconnect comprises spin orbit material; and
a structure adjacent to the interconnect such that the magnetic junction and the structure are on opposite surfaces of the interconnect, wherein the structure comprises a magnet with a second magnetization substantially different from the first magnetization.

23. The apparatus of claim 22 , wherein the first dimension is in a range of 5 to 20 nanometers, and wherein the second dimension is in a range of 10 to 50 nanometers.

Assignees

• Intel Corp

Inventors

• Manipatruni Sasikanth
• Oguz Kaan
• Lin Chia-Ching
• Wiegand Christopher
• Gosavi Tanay
• Young Ian

Classifications

• H10N50/85

  Materials of the active region · CPC title

• H01F10/324

  Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer · CPC title

• H01F10/3286

  Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy · CPC title

• H01F10/3268

  the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn · CPC title

• G11C11/1675 Primary

  Writing or programming circuits or methods · CPC title