Photonic devices

Patent metadata

Field	Value
Publication number	US-11262604-B2
Application number	US-201816227846-A
Country	US
Kind code	B2
Filing date	Dec 20, 2018
Priority date	May 11, 2018
Publication date	Mar 1, 2022
Grant date	Mar 1, 2022

Abstract

Photonic devices having Al 1-x Sc x N and Al y Ga 1-y N materials, where Al is Aluminum, Sc is Scandium, Ga is Gallium, and N is Nitrogen and where 0<x≤0.45 and 0≤y≤1.

First claim

What is claimed is:

1. A photonic device comprising: a Group III-Nitride photonic waveguiding layer with in-plane light propagation; and a cladding layer disposed on the Group III-Nitride photonic waveguiding layer; the cladding layer comprising Al 1-x Sc x N where 0<x≤0.45 and the cladding layer disposed on the Group III-Nitride photonic waveguiding layer providing a lower refractive index at the operating wavelength of the photonic device to the Group III-Nitride photonic waveguiding layer while also providing crystalline lattice matching layer to the Group III-Nitride photonic waveguiding layer.

2. The photonic device recited in claim 1 wherein the photonic waveguiding layer is a material comprising Al y Ga 1-y N where Al is Aluminum, Ga is Gallium, N is Nitrogen and where 0≤y≤1.

3. A photonic device comprising: a Group III-Nitride photonic waveguiding layer with in-plane light propagation and a cladding layer comprising Al 1-x Sc x N material layer, where Al is Aluminum; Sc is Scandium; N is Nitrogen; 0<x≤0.45 and the cladding layer disposed on the Group III-Nitride photonic waveguiding layer providing a lower refractive index at the operating wavelength of the photonic device to the Group III-Nitride photonic waveguiding layer while also providing crystalline lattice matching layer to the Group III-Nitride photonic waveguiding layer.

4. A photonic device having a Group III-Nitride photonic waveguiding layer with in-plane light propagation comprising: an Al 1-x Sc x N layer and an Al y Ga 1-y N layer, Al is Aluminum, Sc is Scandium, N is Nitrogen and where 0<x≤0.45 and 0≤y≤1; and
a cladding layer disposed on the Group III-Nitride photonic waveguiding layer providing a lower refractive index at the operating wavelength of the photonic device to the Group III-Nitride photonic waveguiding layer while also providing crystalline lattice matching layer to the Group III-Nitride photonic waveguiding layer.

5. A structure having a photonic waveguiding layer comprising: a layer comprising a single crystal photonic waveguiding layer with in-plane light propagation; and an Aluminum Scandium Nitride cladding layer disposed on the single crystal photonic waveguiding layer; the cladding layer disposed on the single crystal photonic waveguiding layer providing a lower refractive index at the operating wavelength of the photonic device while also providing crystalline lattice matching layer to the single crystal photonic waveguiding layer.

6. The structure recited in claim 5 wherein the single crystal photonic waveguiding layer comprises: a Group III-Nitride compound; and the Aluminum Scandium Nitride cladding layer comprises Aluminum Scandium Nitride.

7. A photonic device comprising: a Group III-Nitride quantum well photonic waveguiding layer with in-plane light propagation; and a Al 1-x Sc x N cladding layer disposed on the Group III-Nitride quantum well photonic waveguiding layer providing a lower refractive index at the operating wavelength of the photonic device to the Group III-Nitride quantum well photonic waveguiding layer while also providing crystalline lattice matching layer to the Group III-Nitride quantum well photonic waveguiding layer and where 0<x≤0.45.

8. The photonic device recited in claim 7 wherein, the Group III-Nitride quantum well photonic waveguiding layer comprises a stack of Al y Ga 1-y N and In z Ga 1-z N layers where 0<z≤1 and 0≤y≤1.

9. A structure comprising: a photonic waveguiding layer; and an Aluminum Scandium Nitride cladding layer disposed on the photonic waveguiding layer; the Aluminum Scandium Nitride cladding layer disposed on the photonic waveguiding layer providing a lower refractive index at the operating wavelength of the photonic device to the photonic waveguiding layer while also providing crystalline lattice matching layer to the photonic waveguiding layer.

10. A photonic device comprising: a quantum well photonic waveguiding layer with in-plane light propagation comprising: a Group III-N material; and a Al 1-x Sc x N cladding layer disposed on the quantum well photonic waveguiding layer, where: 0<x≤0.45, the Al 1-x Sc x N cladding layer having a lower refractive index than the index of refraction of a the quantum well photonic waveguiding layer; and the cladding layer providing a lower refractive index at the operating wavelength of the photonic device to the quantum well photonic waveguiding layer while also providing crystalline lattice matching layer to the quantum well photonic waveguiding layer.

11. A photonic device having a photonic waveguiding layer comprising a Group III-Nitride quantum well waveguiding layer with in-plane light propagation having a cladding layer disposed on the Group III-Nitride quantum well waveguiding layer comprising Al 1-x Sc x N, where: 0<x≤0.45; and the cladding layer disposed on the Group III-Nitride quantum well waveguiding layer providing a lower refractive index at the operating wavelength of the photonic device to the photonic waveguiding layer while also providing crystalline lattice matching layer to the photonic waveguiding layer.

Assignees

• Raytheon Bbn Technologies Corp
• Raytheon Co

Inventors

• Soltani Mohammad
• Chumbes Eduardo M

Classifications

• H10P14/3416

  Nitrides · CPC title

• H10P14/3251

  consisting of three or more layers · CPC title

• H10P14/3216

  Nitrides · CPC title

• H10P14/3202

  Materials thereof · CPC title

• H10P14/2904

  Silicon carbide · CPC title