Semiconductor device

Patent metadata

Field	Value
Publication number	US-11257943-B2
Application number	US-202016894888-A
Country	US
Kind code	B2
Filing date	Jun 8, 2020
Priority date	Jun 17, 2019
Publication date	Feb 22, 2022
Grant date	Feb 22, 2022

Abstract

A semiconductor device includes a semiconductor substrate having a drift region, and an edge terminal structure portion provided between the active region and an end portion of the semiconductor substrate on an upper surface of the semiconductor substrate. The edge terminal structure portion includes a plurality of guard rings of a second conductivity type which are in contact with the upper surface, and a high concentration region of the first conductivity type which has a higher doping concentration than the drift region and is provided, between adjacent two of the guard rings, from a position shallower than lower ends of the guard rings to a position deeper than the lower ends of the guard rings. Each of the guard rings has a region that is not covered by the high concentration region as viewed from a lower surface side.

First claim

What is claimed is:

1. A semiconductor device comprising:
a semiconductor substrate having a drift region of a first conductivity type;
an active region provided in the semiconductor substrate;
an edge terminal structure portion provided in the semiconductor substrate, and provided between the active region and an end portion of the semiconductor substrate on an upper surface of the semiconductor substrate;
an emitter electrode formed on the upper surface of the semiconductor substrate in the active region; and
a well region of a second conductivity type that is formed between the active region and the edge terminal structure, the well region being in contact with the emitter electrode, wherein:
the edge terminal structure portion has
a plurality of guard rings of a second conductivity type which are in contact with the upper surface of the semiconductor substrate, and
a high concentration region of the first conductivity type which is provided, between adjacent two of the guard rings, from a position on an upper surface side relative to lower ends of the guard rings to a position on a lower surface side relative to the lower ends of the guard rings, the high concentration region having a higher doping concentration than the drift region; and
each of the guard rings has a region that is not covered by the high concentration region as viewed from a lower surface side of the semiconductor substrate.

2. The semiconductor device according to claim 1 , wherein
at least a part of a lower surface of each of the guard rings is in contact with the drift region.

3. The semiconductor device according to claim 1 , wherein
the high concentration region is in contact with the upper surface of the semiconductor substrate.

4. The semiconductor device according to claim 1 , wherein
an upper end of the high concentration region is arranged to be lower than an upper end of the guard rings that are adjacent to each other.

5. The semiconductor device according to claim 4 , wherein
the guard ring is in contact with the upper surface of the semiconductor substrate; and
the upper end of the high concentration region is arranged to be lower than the upper surface of the semiconductor substrate.

6. The semiconductor device according to claim 5 , further comprising:
an interlayer dielectric film that covers the high concentration region.

7. The semiconductor device according to claim 1 , further comprising:
a base region of the second conductivity type on the upper surface of the semiconductor substrate in the active region;
a contact region of the second conductivity type that is shallower and has a higher doping concentration than the base region; and
an emitter region of the first conductivity type that is shallower and has a higher doping concentration than the base region;
wherein the base region, the emitter region, or the contact region is in contact with the emitter electrode.

8. A semiconductor device comprising:
a semiconductor substrate having a drift region of a first conductivity type;
an active region provided in the semiconductor substrate; and
an edge terminal structure portion provided in the semiconductor substrate, and provided between the active region and an end portion of the semiconductor substrate on an upper surface of the semiconductor substrate, wherein:
the edge terminal structure portion has
a plurality of guard rings of a second conductivity type which are in contact with the upper surface of the semiconductor substrate, and
a high concentration region of the first conductivity type which is provided, between adjacent two of the guard rings, from a position on an upper surface side relative to lower ends of the guard rings to a position on a lower surface side relative to the lower ends of the guard rings, the high concentration region having a higher doping concentration than the drift region;
each of the guard rings has a region that is not covered by the high concentration region as viewed from a lower surface side of the semiconductor substrate; and
the high concentration region has
an upper part in contact with the upper surface of the semiconductor substrate, and
a lower part that is provided as a separate part from the upper part, and is provided from the position shallower than the lower ends of the guard rings to the position deeper than the lower ends of the guard rings.

9. The semiconductor device according to claim 8 , wherein:
the upper part contains a first dopant of the first conductivity type; and
the lower part contains a second dopant of the first conductivity type which is made of an element different from the first dopant.

10. The semiconductor device according to claim 9 , wherein
the second dopant is hydrogen.

11. The semiconductor device according to claim 8 , wherein:
the active region has
a base region of the second conductivity type, and
a well region of the second conductivity type which has a higher doping concentration than the base region, and is also provided from the upper surface of the semiconductor substrate to a position deeper than the base region; and
a doping concentration of the lower part is lower than the doping concentration of the well region.

12. The semiconductor device according to claim 11 , wherein
a lower end of the lower part is arranged in a position shallower than a lower end of the well region.

13. A semiconductor device comprising:
a semiconductor substrate having a drift region of a first conductivity type;
an active region provided in the semiconductor substrate; and
an edge terminal structure portion provided in the semiconductor substrate, and provided between the active region and an end portion of the semiconductor substrate on an upper surface of the semiconductor substrate, wherein:
the edge terminal structure portion has
a plurality of guard rings of a second conductivity type which are in contact with the upper surface of the semiconductor substrate, and
a high concentration region of the first conductivity type which is provided, between adjacent two of the guard rings, from a position on an upper surface side relative to lower ends of the guard rings to a position on a lower surface side relative to the lower ends of the guard rings, the high concentration region having a higher doping concentration than the drift region;
each of the guard rings has a region that is not covered by the high concentration region as viewed from a lower surface side of the semiconductor substrate; and
at least a part of a lower surface of each of the guard rings is in contact with the drift region.

14. The semiconductor device according to claim 13 , wherein
the high concentration region is in contact with the upper surface of the semiconductor substrate.

15. The semiconductor device according to claim 13 , wherein
an upper end of the high concentration region is arranged to be lower than an upper end of the guard rings that are adjacent to each other.

16. The semiconductor device according to claim 15 , wherein
the guard ring is in contact with the upper surface of the semiconductor substrate; and
the upper end of the high concentration region is arranged to be lower than the upper surface of the semiconductor substrate.

17. The semiconductor device according to claim 16 , further comprising:
an interlayer dielectric film that covers the high concentration region.

Assignees

• Fuji Electric Co Ltd

Inventors

• Kubouchi Motoyoshi
• Yoshida Soichi

Classifications

• H10D84/611

  Combinations of BJTs and one or more of diodes, resistors or capacitors · CPC title

• H10D62/127 Primary

  of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs · CPC title

• H10D62/107

  Buried supplementary regions, e.g. buried guard rings  (multi-RESURF H10D62/111) · CPC title

• H10D62/106

  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions · CPC title

• H10D30/655

  having edge termination structures · CPC title