Substrate processing apparatus, mixing method, and substrate processing method

Patent metadata

Field	Value
Publication number	US-11257692-B2
Application number	US-202016816530-A
Country	US
Kind code	B2
Filing date	Mar 12, 2020
Priority date	Mar 15, 2019
Publication date	Feb 22, 2022
Grant date	Feb 22, 2022

Abstract

A substrate processing apparatus includes a processing bath, a mixing device, a liquid path, and a silicon solution supply. A substrate is immersed in the processing bath to be processed. The mixing device generates a mixture liquid by mixing a phosphoric acid aqueous solution with an additive that suppresses precipitation of silicon oxide. The liquid path sends the mixture liquid from the mixing device to the processing bath. The silicon solution supply is connected to at least one of the liquid path and the processing bath, and supplies a silicon-containing compound aqueous solution to the mixture liquid supplied from the mixing device.

First claim

What is claimed is:

1. A substrate processing apparatus comprising:
a processing bath in which a substrate is immersed to be processed;
a mixer including a tank and a circulation path that exits from the tank and returns to the tank, the mixer configured to generate a mixture liquid by mixing a phosphoric acid aqueous solution with an additive that suppresses precipitation of silicon oxide;
a liquid sending path diverging from the circulation path at a diverging portion of the circulation path, the liquid sending path configured to send the mixture liquid from the mixer to the processing bath;
a silicon solution supply connected to at least one of the liquid sending path and the processing bath, and configured to supply a silicon-containing compound aqueous solution to the mixture liquid supplied from the mixer; and
a controller configured to control the processing bath, the mixer, the liquid path, and the silicon solution supply,
wherein a back pressure valve is provided in the circulation path downstream from diverging portion,
the liquid sending path includes a flow meter and a thermometer, the flow meter configured to correct a flow rate of the mixture liquid based on a temperature of the mixture liquid measured by the thermometer,
the circulation path includes a return path that starts at the diverging portion where the liquid sending path including the flow meter diverges from the circulation path, and the return path continues downstream from the diverging portion to return to the tank, and
the controller fully opens the back pressure valve when the mixture liquid is generated while circulating the mixture liquid through the circulation path, and throttles the back pressure valve when the mixture liquid is sent to the liquid sending path.

2. The substrate processing apparatus according to claim 1 , wherein the circulation path includes a filter that filters the mixture liquid, and a bypass flow path that bypasses the filter.

3. The substrate processing apparatus according to claim 1 ,
wherein the mixer includes a heater that heats the mixture liquid, and
the controller controls the heater to set a temperature of the mixture liquid based on whether to supply the silicon-containing compound aqueous solution to the mixture liquid.

4. The substrate processing apparatus according to claim 1 , wherein a plurality of mixers is provided for one processing bath, and
each mixer of the plurality of mixers exclusively supplies the mixture liquid to the one processing bath.

5. The substrate processing apparatus according to claim 1 , wherein a plurality of mixers is provided for a plurality of processing baths, and
the mixture liquid is sequentially supplied to the plurality of processing baths that require supply of the mixture liquid starting from the mixer in which generation of the mixture liquid is completed.

6. A substrate processing apparatus comprising:
a processing bath in which a substrate is immersed to be processed;
a mixer configured to generate a mixture liquid by mixing a phosphoric acid aqueous solution with an additive that suppresses precipitation of silicon oxide, wherein the mixer includes a tank, and a circulation path that exits from the tank and returns to the tank;
a liquid sending path configured to send the mixture liquid from the mixer to the processing bath, wherein the liquid sending path is provided diverging from the circulation path;
a silicon solution supply connected to at least one of the liquid sending path and the processing bath, and configured to supply a silicon-containing compound aqueous solution to the mixture liquid supplied from the mixer;
a back pressure valve provided in the circulation path on a downstream side of a portion from which the liquid sending path diverges; and
a circuitry configured to control the back pressure valve to be fully open while circulating the mixture liquid through the circulation path so as to generate the mixture liquid, and to be throttled when the mixture liquid is sent to the liquid sending path.

7. The substrate processing apparatus according to claim 6 , wherein the circulation path includes a filter that filters the mixture liquid, and a bypass flow path that bypasses the filter.

8. The substrate processing apparatus according to claim 6 , further comprising:
a flow meter and a thermometer provided in the liquid sending path,
wherein the flow meter corrects a flow rate of the mixture liquid based on a temperature of the mixture liquid measured by the thermometer.

9. The substrate processing apparatus according to claim 8 ,
wherein the mixer includes a heater that heats the mixture liquid, and
the circuitry controls the heater to set a temperature of the mixture liquid based on whether to supply the silicon-containing compound aqueous solution to the mixture liquid.

10. The substrate processing apparatus according to claim 8 , wherein a plurality of mixers is provided for one processing bath, and
each mixer of the plurality of mixers exclusively supplies the mixture liquid to the one processing bath.

11. The substrate processing apparatus according to claim 8 , wherein a plurality of mixers is provided for a plurality of processing baths, and
the mixture liquid is sequentially supplied to the plurality of processing baths that require supply of the mixture liquid starting from the mixer in which generation of the mixture liquid is completed.

Assignees

• Tokyo Electron Ltd

Inventors

• Ogura Kouji
• Nonaka Jun
• Inada Takao
• Nishiwaki Yoshinori
• Yoshida Hiroshi

Classifications

• H10P72/0402

  Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence) · CPC title

• H10P72/0426 Primary

  with the semiconductor substrates being dipped in baths or vessels · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P50/642

  Chemical etching · CPC title

• H01L21/67086 Primary

  Electricity · mapped topic