Perimeter trench formation and delineation etch delayering

Patent metadata

Field	Value
Publication number	US-11257683-B2
Application number	US-202016903922-A
Country	US
Kind code	B2
Filing date	Jun 17, 2020
Priority date	Jun 21, 2019
Publication date	Feb 22, 2022
Grant date	Feb 22, 2022

Abstract

Apparatus and methods are disclosed for sample preparation, suitable for online or offline use with multilayer samples. Ion beam technology is leveraged to provide rapid, accurate delayering with etch stops at a succession of target layers. In one aspect, a trench is milled around a region of interest (ROI), and a conductive coating is developed on an inner sidewall. Thereby, reliable conducting paths are formed between intermediate layers within the ROI and a base layer, and stray current paths extending outside the ROI are eliminated, providing better quality etch progress monitoring, during subsequent etching, from body or scattered currents. Ion beam assisted gas etching provides rapid delayering with etch stops at target polysilicon layers. Uniform etching at deep layers can be achieved. Variations and results are disclosed.

First claim

We claim:

1. An apparatus comprising:
an etcher; and
a controller coupled to the etcher, the controller configured to:
electrically isolate a region of interest (ROI) of a sample from a surrounding area of the sample by causing the etcher to etch a trench around the ROI, the etched trench exposing a lateral surface of the ROI; and
electrically couple two or more conductive layers of the sample by causing electrically conductive material to be coated over the lateral surface exposed by the trench.

2. The apparatus of claim 1 , wherein the etcher comprises an ion milling machine.

3. The apparatus of claim 2 , wherein the ion milling machine produces a Ga+ or Xe+ ion beam.

4. The apparatus of claim 2 , wherein the etching of the trench is performed by milling, and the electrically coupling is performed as a byproduct of the milling of the trench.

5. The apparatus of claim 4 , wherein the trench width is in a range of 0.2-5 μm.

6. The apparatus of claim 1 , further comprising a coater coupled to the controller, wherein the coater is an ion beam assisted coater and the electrically coupling is performed by the ion beam assisted coater.

7. The apparatus of claim 1 , wherein the controller is configured to cause the trench around the ROI to be etched to at least a depth of a conductive base layer of the sample, and the two or more layers include the base layer and a conductive layer above the base layer.

8. The apparatus of claim 7 , wherein the trench has a transverse inner dimension in a range 5-500 μm, or a depth in a range of 1-10 μm.

9. The apparatus of claim 1 , wherein the trench forms a closed path around the ROI.

10. A method comprising:
electrically isolating a region of interest (ROI) of a sample from a surrounding area of the sample, by milling a trench around the ROI to at least a depth of a base layer of the sample, the etched trench exposing a lateral surface of the ROI; and
electrically coupling two or more conductive layers of the sample by causing electrically conductive material to be coated over the lateral surface exposed by the trench.

11. The method of claim 10 , wherein the coating electrically couples the base layer to one or more conductive layers above the base layer.

12. The method of claim 10 , wherein the sample comprises: a stacked electronic structure, a vertical flash memory structure, or a 3D-NAND stack.

13. The method of claim 10 , wherein the lateral surface exposes a plurality of layers of the sample, at least one of which is a poly silicon layer.

14. The method of claim 10 , wherein the electrically isolating comprises ion beam milling.

15. The method of claim 14 , wherein the coating is a byproduct of the ion beam milling.

16. The method of claim 10 , wherein the coating comprises ion assisted coating or ion assisted chemical vapor deposition.

17. An apparatus comprising:
an etcher; and
a controller coupled to the etcher, the controller configured to:
electrically isolate a region of interest (ROI) of a sample from a surrounding area of the sample by causing the etcher to etch a trench around the ROI, the etched trench forming a closed path around the ROI and exposing a lateral surface of the ROI;
electrically couple two or more conductive layers of the sample by causing electrically conductive material to be coated over the lateral surface exposed by the trench;
subsequent to the two or more conductive layers of the sample being electrically coupled, cause the etcher to perform delayering of the sample within the ROI; and
monitor the delayering using a measured body current from the electrically coupled two or more layers of the sample.

18. The apparatus of claim 17 , wherein the etcher comprises an ion milling machine.

19. The apparatus of claim 17 , wherein the apparatus comprises a coater, and the controller is configured to cause the coater to coat the electrically conductive material, over the lateral surface exposed by the trench, using ion-beam assisted metallization.

20. The apparatus of claim 17 , wherein the controller is further configured to pause the delayering based on the measured body current.

Assignees

• Fei Co

Inventors

• Clarke James
• Ledoux Micah
• Monfort Jason Lee
• Avedisian Brett

Classifications

• H10P72/0421 Primary

  for drying etching · CPC title

• H10P50/262 Primary

  by physical means only · CPC title

• H10D88/00

  Three-dimensional [3D] integrated devices · CPC title

• H01J2237/31745

  for preparing specimen to be viewed in microscopes or analyzed in microanalysers · CPC title

• G01N1/32 Primary

  Polishing; Etching · CPC title