Aging detection circuit, aging compensation circuit, display panel and aging compensation method

US11257406B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11257406-B2
Application numberUS-201916618241-A
CountryUS
Kind codeB2
Filing dateMay 13, 2019
Priority dateMay 16, 2018
Publication dateFeb 22, 2022
Grant dateFeb 22, 2022

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

An aging detection circuit, an aging compensation circuit, a display panel, and an aging compensation method are provided. The aging detection circuit includes: a first current mirror circuit, a second current mirror circuit, a voltage converter and an analog-digital converter. An input terminal of the first current mirror circuit is electrically coupled to an initial reference voltage terminal and an anode of a to-be-detected light-emitting diode respectively, and an output terminal of the first current mirror circuit is electrically coupled to an input terminal of the second current mirror circuit. An output terminal of the second current mirror circuit is electrically coupled to an input terminal of the voltage converter.

First claim

Opening claim text (preview).

What is claimed is: 1. An aging detection circuit, comprising a first current mirror circuit, a second current mirror circuit, a voltage converter, and an analog-to-digital converter, wherein an input terminal of the first current mirror circuit is electrically coupled to an initial reference voltage terminal via one initial switch and an anode of a to-be-detected light-emitting diode respectively, an output terminal of the first current mirror circuit is electrically coupled to an input terminal of the second current mirror circuit, and a power input terminal of the first current mirror circuit is electrically coupled to a first reference voltage terminal, an output terminal of the second current mirror circuit is electrically coupled to an input terminal of the voltage converter, and a power input terminal of the second current mirror circuit is electrically coupled to a third reference voltage terminal, one of the first current mirror circuit and the second current mirror circuit is an N-type current mirror circuit, and the other of the first current mirror circuit and the second current mirror circuit is a P-type current mirror circuit, the voltage converter is configured to convert a current output from the second current mirror circuit into a voltage and output the voltage, and the analog-to-digital converter is configured to convert the voltage signal output from the voltage converter into a digital signal, one terminal of the initial switch is directly and only coupled to the initial reference voltage terminal, and another terminal of the initial switch is directly and only coupled to the input terminal of the first current mirror circuit. 2. The aging detection circuit according to claim 1 , wherein the first reference voltage terminal is a ground terminal, the third reference voltage terminal is a voltage terminal that provides a voltage higher than a voltage of the first reference voltage terminal, the first current mirror circuit is an N-type current mirror circuit, and the second current mirror circuit is a P-type current mirror circuit. 3. The aging detection circuit according to claim 2 , wherein the voltage converter comprises an integration circuit, a second switch, a second capacitor, and a third switch, the integration circuit comprises an amplifier, a first capacitor and a first switch, an inverting input terminal of the amplifier serves as the input terminal of the voltage converter, and a non-inverting input terminal of the amplifier is coupled to a second reference voltage terminal, one terminal of the first capacitor is coupled to the inverting input terminal of the amplifier, and the other terminal of the first capacitor is coupled to an output terminal of the amplifier, one terminal of the first switch is electrically coupled to the one terminal of the first capacitor, and the other terminal of the first switch is electrically coupled to the other terminal of the first capacitor, one terminal of the second capacitor is coupled between the second switch and the third switch, and the other terminal of the second capacitor is electrically coupled to the first reference voltage terminal, and one terminal of the third switch is coupled to the second switch and the second capacitor, and the other terminal of the third switch serves as an output terminal of the voltage converter. 4. The aging detection circuit according to claim 2 , wherein the first current mirror circuit comprises a first N-type current mirror transistor and a second N-type current mirror transistor, a gate electrode of the first N-type current mirror transistor is electrically coupled to a gate electrode of the second N-type current mirror transistor, a first electrode of the first N-type current mirror transistor serves as an input terminal of the aging detection circuit, a second electrode of the first N-type current mirror transistor serves as the power input terminal of the first current mirror circuit, and the first electrode of the first N-type current mirror transistor is electrically coupled to the gate electrode of the first N-type current mirror transistor, and a first electrode of the second N-type current mirror transistor serves as the output terminal of the first current mirror circuit, and a second electrode of the second N-type current mirror transistor is electrically coupled to the second electrode of the first N-type current mirror transistor. 5. The aging detection circuit according to claim 2 , wherein the second current mirror circuit comprises a first P-type current mirror transistor and a second P-type current mirror transistor, a gate electrode of the first P-type current mirror transistor is electrically coupled to a gate electrode of the second P-type current mirror transistor, a first electrode of the first P-type current mirror transistor serves as the input terminal of the second current mirror circuit, a second electrode of the first P-type current mirror transistor serves as the power input terminal of the second current mirror circuit, and the first electrode of the first P-type current mirror transistor is electrically coupled to the gate electrode of the first P-type current mirror transistor, and a first electrode of the second P-type current mirror transistor serves as the output terminal of the second current mirror circuit, and a second electrode of the second P-type current mirror transistor is electrically coupled to the second electrode of the first P-type current mirror transistor. 6. The aging detection circuit according to claim 2 , wherein the second current mirror circuit comprises a first P-type current mirror transistor, a second P-type current mirror transistor, a third P-type current mirror transistor, and a fourth P-type current mirror transistor, a gate electrode of the first P-type current mirror transistor is electrically coupled to a gate electrode of the second P-type current mirror transistor, a first electrode of the first P-type current mirror transistor is electrically coupled to a first electrode of the third P-type current mirror transistor, a second electrode of the first P-type current mirror transistor serves as the power input terminal of the second current mirror circuit, and the gate electrode of the first P-type current mirror transistor is electrically coupled to the first electrode of the first P-type current mirror transistor, a first electrode of the second P-type current mirror transistor is electrically coupled to a first electrode of the fourth P-type current mirror transistor, and a second electrode of the second P-type current mirror transistor is electrically coupled to the second electrode of the first P-type current mirror transistor, a gate electrode of the third P-type current mirror transistor is electrically coupled to a gate electrode of the fourth P-type current mirror transistor, a second electrode of the third P-type current mirror transistor serves as the input terminal of the second current mirror circuit, and the gate electrode of the third P-type current mirror transistor is electrically coupled to the second electrode of the third P-type current mirror transistor, and a second electrode of the fourth P-type current mirror transistor serves as the output terminal of the second current mirror circuit. 7. An aging compensation circuit, comprising a compensation value calculation circuit, a source driving circuit, and an aging detection circuit which is the aging detection circuit according to claim 1 , wherein an output terminal of the analog-to-digital converter in the aging detection circuit is electrically coupled to the compensation value calculation circuit the compensation value calculation circuit is configured to determine and output a data voltage compensation value corr

Assignees

Inventors

Classifications

  • Compensation of drifts in the characteristics of light emitting or modulating elements · CPC title

  • G09G3/3233Primary

    with pixel circuitry controlling the current through the light-emitting element · CPC title

  • Details of drivers for data electrodes · CPC title

  • Details of timing specific for flat panels, other than clock recovery · CPC title

  • G09G3/006Primary

    Electronic inspection or testing of displays and display drivers, e.g. of LED or LCD displays (testing individual LED's G01R31/2635; testing lamps G01R31/44; testing of optical features of LCD displays G02F1/1309) · CPC title

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What does patent US11257406B2 cover?
An aging detection circuit, an aging compensation circuit, a display panel, and an aging compensation method are provided. The aging detection circuit includes: a first current mirror circuit, a second current mirror circuit, a voltage converter and an analog-digital converter. An input terminal of the first current mirror circuit is electrically coupled to an initial reference voltage terminal…
Who is the assignee on this patent?
Hefei Xinsheng Optoelectronics Technology Co Ltd, Boe Technology Group Co Ltd
What technology area does this patent fall under?
Primary CPC classification G09G3/3233. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Feb 22 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 7 related publications on this page (citations in our corpus or others sharing the same primary CPC).