Hard-mask forming composition and method for manufacturing electronic component

US11248086B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11248086-B2
Application numberUS-201916387164-A
CountryUS
Kind codeB2
Filing dateApr 17, 2019
Priority dateMay 1, 2018
Publication dateFeb 15, 2022
Grant dateFeb 15, 2022

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A hard-mask forming composition, which is used for forming a hard mask used in lithography, including a first resin and a second resin, in which an amount of carbon contained in the first resin is 85% by mass or more with respect to the total mass of all elements constituting the first resin, and the amount of carbon contained in the second resin is 70% by mass or more with respect to the total mass of all elements constituting the second resin and less than the amount of carbon contained in the first resin.

First claim

Opening claim text (preview).

What is claimed is: 1. A hard-mask forming composition, which is used for forming a hard mask used in lithography, comprising: a first resin; and a second resin, wherein an amount of carbon contained in the first resin is 85% by mass or more with respect to the total mass of all elements constituting the first resin, an amount of carbon contained in the second resin is 70% by mass or more with respect to the total mass of all elements constituting the second resin and less than the amount of carbon contained in the first resin, and the first resin contains a resin having a structural unit (u11) represented by the following general formula (u11-1) and a structural unit (u12) represented by the following general formula (u12-1): wherein R 11 is a hydrocarbon group having 1 to 20 carbon atoms which may have a substituent, or a hydrogen atom, and R 12 is an aromatic hydrocarbon group having 6 to 30 carbon atoms which may have a substituent. 2. The hard-mask forming composition according to claim 1 , wherein the resin further has a structural unit (u13) represented by the following general formula (u13-1): wherein R 13 is a polycyclic hydrocarbon group of 10 to 30 carbon atoms which may have a substituent. 3. The hard-mask forming composition according to claim 1 , wherein the second resin contains a phenol resin having a structural unit (u21) represented by the following general formula (u21-1) and a structural unit (u22) represented by the following general formula (u22-1): wherein R 21 is an organic group derived from a phenol compound having at least one hydroxy group, and R 22 is an aromatic hydrocarbon group having 6 to 30 carbon atoms which may have a substituent, or a hydrogen atom. 4. The hard-mask forming composition according to claim 1 , wherein a mass ratio of the first resin to the second resin is 50/50 to 95/5. 5. A method for manufacturing an electronic component, comprising: forming a hard mask layer (m 1 ) on a support using the hard-mask forming composition according to claim 1 ; forming a hard mask layer (m 2 ) made of an inorganic material on the hard mask layer (m 1 ); forming a resist film on the hard mask layer (m 2 ); forming a resist pattern on the hard mask layer (m 2 ) by exposing and developing the resist film; etching the hard mask layer (m 2 ) with the resist pattern as a mask to form an inorganic pattern; etching the hard mask layer (m 1 ) with the inorganic pattern as a mask to form a resin pattern; and processing the support with the resin pattern as a mask. 6. A method for manufacturing an electronic component, comprising: forming a hard mask layer (m 1 ) on a support using the hard-mask forming composition according to claim 1 ; forming an inorganic pattern made of an inorganic material on the hard mask layer (m 1 ); etching the hard mask layer (m 1 ) with the inorganic pattern as a mask to form a resin pattern; and processing the support with the resin pattern as a mask.

Assignees

Inventors

Classifications

  • H10P76/405Primary

    characterised by their composition, e.g. multilayer masks · CPC title

  • Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating · CPC title

  • carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC · CPC title

  • Condensation polymers of aldehydes or ketones with monomers covered by at least two of the groups C08L61/04, C08L61/18 and C08L61/20 · CPC title

  • Side-chains having aromatic units · CPC title

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What does patent US11248086B2 cover?
A hard-mask forming composition, which is used for forming a hard mask used in lithography, including a first resin and a second resin, in which an amount of carbon contained in the first resin is 85% by mass or more with respect to the total mass of all elements constituting the first resin, and the amount of carbon contained in the second resin is 70% by mass or more with respect to the total…
Who is the assignee on this patent?
Tokyo Ohka Kogyo Co Ltd
What technology area does this patent fall under?
Primary CPC classification H10P76/405. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Feb 15 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).