Thin film transistor array substrate and organic light emitting diode panel

Patent metadata

Field	Value
Publication number	US-11244994-B2
Application number	US-201916650873-A
Country	US
Kind code	B2
Filing date	Dec 25, 2019
Priority date	Oct 23, 2019
Publication date	Feb 8, 2022
Grant date	Feb 8, 2022

Abstract

A thin film transistor (TFT) array substrate and an organic light emitting diode (OLED) panel are provided. The TFT array substrate includes a display area and a non-display area. The non-display area is provided with a plurality of gate traces connected to a control chip, the TFT array substrate includes: a flexible substrate includes a metal jumper-joint sublayer disposed in the non-display area, wherein the metal jumper-joint sublayer is adjacent to the display area; and a thin film transistor is disposed on the flexible substrate, wherein the thin film transistor layer includes a plurality of thin film transistors correspondingly disposed in the display area, and a gate trace of each of the thin film transistors and the gate trace of the non-display area are connected by a jumper joint arrangement through the metal jumper-joint sublayer.

First claim

What is claimed is:

1. An organic light emitting diode (OLED) panel, comprising:
a thin film transistor (TFT) array substrate comprising a display area and a non-display area, wherein the non-display area is provided with a plurality of gate traces connected to a control chip, the TFT array substrate includes a flexible substrate and a thin film transistor layer, the flexible substrate includes a metal jumper-joint sublayer disposed in the non-display area, the metal jumper-joint sublayer is adjacent to the display area, the thin film transistor layer is disposed on the flexible substrate, and the thin film transistor layer includes a plurality of thin film transistors correspondingly disposed in the display area, a gate trace of each of the thin film transistors and a gate trace of the non-display area are connected by a jumper joint arrangement through the metal jumper-joint sublayer, the flexible substrate includes a first flexible sublayer, an inorganic sublayer, the metal jumper-joint sublayer, and a second flexible sublayer stacked in sequence;
a planarization layer is disposed on the thin film transistor layer;
a pixel definition layer is disposed on the planarization layer;
an organic electroluminescent device layer is disposed on the pixel definition layer and located in the display area; and
an encapsulation layer is disposed on the organic electroluminescent device layer.

2. The OLED panel according to claim 1 , wherein the metal jumper-joint sublayer comprises a first titanium metal sublayer, an aluminum metal sublayer, and a second titanium metal sublayer stacked in sequence.

3. The OLED panel according to claim 1 , wherein the metal jumper-joint sublayer is correspondingly disposed in a bending area of the non-display area.

4. The OLED panel according to claim 1 , wherein the second flexible sublayer is provided with a first through hole and a second through hole, the first through hole is used for connecting the gate trace of the thin film transistor to the metal jumper-joint sublayer, and the second through hole is used for connecting the gate trace of the non-display area to the metal jumper-joint sublayer.

5. The OLED panel according to claim 1 , wherein the thin film transistor layer comprises a TFT active area, a gate insulation sublayer, the gate traces, an interlayer dielectric sublayer, and a plurality of source/drain traces stacked in sequence, the gate insulation sublayer is provided with a third through hole at a position corresponding to the metal jumper-joint sublayer, and the third through hole is used for connecting the gate trace of the thin film transistor to the metal jumper-joint sublayer.

6. The OLED panel according to claim 1 , wherein the TFT array substrate further comprises a buffer layer disposed between the flexible substrate and the thin film transistor layer, the buffer layer is provided with a fourth through hole at a position corresponding to the metal jumper-joint sublayer, and the fourth through hole is used for connecting the gate trace of the thin film transistor to the metal jumper-joint sublayer.

7. The OLED panel according to claim 1 , wherein the encapsulation layer comprises a first inorganic encapsulation layer, an organic encapsulation layer, and a second inorganic encapsulation layer.

8. A thin film transistor (TFT) array substrate,
comprising a display area and a non-display area, wherein the non-display area is provided with a plurality of gate traces connected to a control chip, the TFT array substrate includes:
a flexible substrate includes a metal jumper-joint sublayer disposed in the non-display area, the metal jumper-joint sublayer adjacent to the display area; and
a thin film transistor layer is disposed on the flexible substrate, and the thin film transistor layer includes a plurality of thin film transistors correspondingly disposed in the display area, a gate trace of each of the thin film transistors and a gate trace of the non-display area are connected by a jumper joint arrangement through the metal jumper-joint sublayer.

9. The TFT array substrate according to claim 8 , wherein the flexible substrate comprises a first flexible sublayer, an inorganic sublayer, the metal jumper-joint sublayer, and a second flexible sublayer stacked in sequence.

10. The TFT array substrate according to claim 9 , wherein the metal jumper-joint sublayer comprises a first titanium metal sublayer, an aluminum metal sublayer, and a second titanium metal sublayer stacked in sequence.

11. The TFT array substrate according to claim 9 , wherein the metal jumper-joint sublayer is correspondingly disposed in a bending area of the non-display area.

12. The TFT array substrate according to claim 9 , wherein the second flexible sublayer is provided with a first through hole and a second through hole, the first through hole is used for connecting the gate trace of the thin film transistor to the metal jumper-joint sublayer, and the second through hole is used for connecting the gate trace of the non-display area to the metal jumper-joint sublayer.

13. The TFT array substrate according to claim 8 , wherein the thin film transistor layer comprises a TFT active area, a gate insulation sublayer, the gate traces, an interlayer dielectric sublayer, and a plurality of source/drain traces stacked in sequence, the gate insulation sublayer is provided with a third through hole at a position corresponding to the metal jumper-joint sublayer, and the third through hole is used for connecting the gate trace of the thin film transistor to the metal jumper-joint sublayer.

14. The TFT array substrate according to claim 13 , wherein the TFT array substrate further comprises a buffer layer disposed between the flexible substrate and the thin film transistor layer, the buffer layer is provided with a fourth through hole at a position corresponding to the metal jumper-joint sublayer, and the fourth through hole is used for connecting the gate trace of the thin film transistor to the metal jumper-joint sublayer.

15. An organic light emitting diode (OLED) panel, comprising:
a thin film transistor (TFT) array substrate comprising a display area and a non-display area, wherein the non-display area is provided with a plurality of gate traces connected to a control chip, the TFT array substrate includes a flexible substrate and a thin film transistor layer, the flexible substrate includes a metal jumper-joint sublayer disposed in the non-display area, the metal jumper-joint sublayer is adjacent to the display area, the thin film transistor layer is disposed on the flexible substrate, and the thin film transistor layer includes a plurality of thin film transistors correspondingly disposed in the display area, a gate trace of each of the thin film transistors and a gate trace of the non-display area are connected by a jumper joint arrangement through the metal jumper-joint sublayer;
an organic electroluminescent device layer is disposed on the thin film transistor layer and located in the display area; and
an encapsulation layer is disposed on the organic electroluminescent device layer.

16. The OLED panel according to claim 15 , wherein the flexible substrate comprises a first flexible sublayer, an inorganic sublayer, the metal jumper-joint sublayer, and a second flexible sublayer stacked in sequence.

17. The OLED panel according to claim 16 , wherein the metal jumper-joint sublayer is correspondingly disposed in a bending area of the non-display area.

Assignees

• Wuhan China Star Optoelectronics Semiconductor Display Tech Co Ltd

Inventors

• Xu Bin
• Xu Hongyu

Classifications

• H10K59/1275

  Electrical connections of the two substrates · CPC title

• H10K59/131 Primary

  Interconnections, e.g. wiring lines or terminals · CPC title

• Y02E10/549

  Organic PV cells · CPC title

• H01L27/3262

  Electricity · mapped topic

• H01L51/5253

  Electricity · mapped topic