Plating method, bubble ejection member, plating apparatus, and device

US11242610B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11242610-B2
Application numberUS-201816757109-A
CountryUS
Kind codeB2
Filing dateOct 17, 2018
Priority dateOct 19, 2017
Publication dateFeb 8, 2022
Grant dateFeb 8, 2022

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  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A method that can plate a predetermined position on various plating targets without implementing a pretreatment thereon is provided. A plating method is performed on a plating target using a plating solution, and the plating method includes at least a bubble ejection step of ejecting a bubble generated by a bubble ejection member to a plating solution. The bubble ejection member includes an electrode formed of a conductive material and an insulating material covering at least a part of the electrode, at least a part of the insulating material forms a bubble ejection port, and an air gap surrounded by the insulating material is formed between at least a part of the electrode and the bubble ejection port.

First claim

Opening claim text (preview).

The invention claimed is: 1. A plating method performed on a plating target using a plating solution and a bubble ejection member, wherein the bubble ejection member includes: an electrode formed of a conductive material; and an insulating member covering at least a part of the electrode, and at least a part of the insulating member forms a bubble ejection port, and an air gap surrounded by the insulating member is formed between at least a part of the electrode and the bubble ejection port, the plating method comprising at least: supplying the plating solution to a target portion of the plating target to be plated; ejecting a bubble generated by the bubble ejection member from the bubble ejection port to the plating solution on the plating target; and performing plating the target portion of the plating target, wherein the ejecting the bubble comprises applying a voltage between the electrode and a counter electrode, and the counter electrode is a member different from the plating target and placed at a location other than the air gap of the bubble ejection member. 2. The plating method according to claim 1 , wherein the plating solution contains metal ions, and wherein the metal ions in the plating solution are converted into a metal by ejecting the bubble generated by the bubble ejection member to the plating solution. 3. The plating method according to claim 1 , wherein the plating solution contains metal nanoparticles. 4. The plating method according to claim 1 , wherein in the ejecting the bubble, a recess is formed in the plating target by the ejected bubble, and a metal is formed inside the recess. 5. The plating method according to claim 1 , wherein in the ejecting the bubble, a metal is formed on the plating target continuously by ejecting bubbles while changing a relative position of the bubble ejection port and the plating target. 6. The plating method according to claim 1 , wherein the bubble ejection member includes a flow path to supply the plating solution to at least a part of the electrode, wherein the flow path is formed inside the electrode, and/or formed by a combination of the electrode and the insulating member. 7. The plating method according to claim 1 , wherein at least a part of the electrode has an acute shape. 8. The plating method according to claim 1 , wherein the plating target is of a type selected from a metal, a resin, an animal, or a plant. 9. The plating method according to claim 2 , wherein the plating solution contains metal nanoparticles. 10. The plating method according to claim 2 , wherein in the ejecting the bubble, a recess is formed in the plating target by the ejected bubble, and a metal is formed inside the recess. 11. The plating method according to claim 2 , wherein in the ejecting the bubble, a metal is formed on the plating target continuously by ejecting bubbles while changing a relative position of the bubble ejection port and the plating target. 12. The plating method according to claim 2 , wherein the bubble ejection member includes a flow path to supply the plating solution to at least a part of the electrode, wherein the flow path is formed inside the electrode, and/or formed by a combination of the electrode and the insulating member. 13. The plating method according to claim 2 , wherein at least a part of the electrode has an acute shape. 14. The plating method according to claim 2 , wherein the plating target is of a type selected from a metal, a resin, an animal, or a plant. 15. The plating method according to claim 1 , wherein the counter electrode is placed in contact with the plating solution. 16. The plating method according to claim 15 , wherein the counter electrode is placed in contact with the plating target.

Assignees

Inventors

Classifications

  • Electroplating characterised by the article coated · CPC title

  • using locally applied jets of electrolyte · CPC title

  • of plastics · CPC title

  • of copper · CPC title

  • Semiconductors · CPC title

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Frequently asked questions

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What does patent US11242610B2 cover?
A method that can plate a predetermined position on various plating targets without implementing a pretreatment thereon is provided. A plating method is performed on a plating target using a plating solution, and the plating method includes at least a bubble ejection step of ejecting a bubble generated by a bubble ejection member to a plating solution. The bubble ejection member includes an ele…
Who is the assignee on this patent?
Univ Kyushu Nat Univ Corp
What technology area does this patent fall under?
Primary CPC classification C25D5/08. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Feb 08 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).