The invention claimed is:
1. A plating method performed on a plating target using a plating solution and a bubble ejection member,
wherein the bubble ejection member includes:
an electrode formed of a conductive material; and
an insulating member covering at least a part of the electrode, and
at least a part of the insulating member forms a bubble ejection port, and an air gap surrounded by the insulating member is formed between at least a part of the electrode and the bubble ejection port,
the plating method comprising at least:
supplying the plating solution to a target portion of the plating target to be plated;
ejecting a bubble generated by the bubble ejection member from the bubble ejection port to the plating solution on the plating target; and
performing plating the target portion of the plating target,
wherein the ejecting the bubble comprises applying a voltage between the electrode and a counter electrode, and
the counter electrode is a member different from the plating target and placed at a location other than the air gap of the bubble ejection member.
2. The plating method according to claim 1 ,
wherein the plating solution contains metal ions, and
wherein the metal ions in the plating solution are converted into a metal by ejecting the bubble generated by the bubble ejection member to the plating solution.
3. The plating method according to claim 1 , wherein the plating solution contains metal nanoparticles.
4. The plating method according to claim 1 , wherein in the ejecting the bubble, a recess is formed in the plating target by the ejected bubble, and a metal is formed inside the recess.
5. The plating method according to claim 1 , wherein in the ejecting the bubble, a metal is formed on the plating target continuously by ejecting bubbles while changing a relative position of the bubble ejection port and the plating target.
6. The plating method according to claim 1 , wherein the bubble ejection member includes a flow path to supply the plating solution to at least a part of the electrode,
wherein the flow path is
formed inside the electrode, and/or
formed by a combination of the electrode and the insulating member.
7. The plating method according to claim 1 , wherein at least a part of the electrode has an acute shape.
8. The plating method according to claim 1 , wherein the plating target is of a type selected from a metal, a resin, an animal, or a plant.
9. The plating method according to claim 2 , wherein the plating solution contains metal nanoparticles.
10. The plating method according to claim 2 , wherein in the ejecting the bubble, a recess is formed in the plating target by the ejected bubble, and a metal is formed inside the recess.
11. The plating method according to claim 2 , wherein in the ejecting the bubble, a metal is formed on the plating target continuously by ejecting bubbles while changing a relative position of the bubble ejection port and the plating target.
12. The plating method according to claim 2 , wherein the bubble ejection member includes a flow path to supply the plating solution to at least a part of the electrode,
wherein the flow path is
formed inside the electrode, and/or
formed by a combination of the electrode and the insulating member.
13. The plating method according to claim 2 , wherein at least a part of the electrode has an acute shape.
14. The plating method according to claim 2 , wherein the plating target is of a type selected from a metal, a resin, an animal, or a plant.
15. The plating method according to claim 1 , wherein the counter electrode is placed in contact with the plating solution.
16. The plating method according to claim 15 , wherein the counter electrode is placed in contact with the plating target.