Array substrate and preparation method thereof

Patent metadata

Field	Value
Publication number	US-11239113-B2
Application number	US-202016836308-A
Country	US
Kind code	B2
Filing date	Mar 31, 2020
Priority date	Nov 12, 2019
Publication date	Feb 1, 2022
Grant date	Feb 1, 2022

Abstract

The present disclosure discloses an array substrate and a preparation method thereof. After a first passivation layer is formed, residual gas is directly drawn out of a closed chamber to prevent the residual gas from reacting to form an unstable layer on the first passivation layer. Furthermore, after the residual gas is drawn out, a preset gas fills the closed chamber, and is retained for a preset time period and then drawn out. The retaining of the preset gas can effectively alleviate the damage to the passivation layer by static electricity.

First claim

The invention claimed is:

1. A preparation method of an array substrate, comprising:
providing a base substrate;
forming a first passivation layer on the base substrate in a closed chamber filled with a first reaction gas, wherein the first reaction gas is a mixed gas containing silicon ions and nitrogen ions;
drawing residual gas out of the closed chamber after the formation of the first passivation layer; and
filling the closed chamber with a preset gas, retaining the preset gas in the closed chamber for a first preset time period and drawing out the preset gas to complete the preparation of the first passivation layer, wherein as compared with the residual gas, the preset gas exists more stably in the closed chamber;
wherein before the formation of the first passivation layer, the method further comprises:
sequentially forming a third passivation layer and a second passivation layer on the base substrate in the closed chamber, wherein a hardness of the first passivation layer, the second passivation layer and the third passivation layer increases in sequence.

2. The preparation method of the array substrate according to claim 1 , wherein the forming the first passivation layer on the base substrate in the closed chamber filled with the first reaction gas comprises:
placing the base substrate in the closed chamber;
filling the closed chamber with the first reaction gas through a gas inlet of the closed chamber; and
enabling the first reaction gas to react for a second preset time period in the closed chamber and enabling reaction products to gradually deposit on the base substrate to form the first passivation layer with a preset thickness.

3. The preparation method of the array substrate according to claim 1 , wherein the first reaction gas is a mixed gas of SiH4, NH3 and N2.

4. The preparation method of the array substrate according to claim 1 , wherein after the drawing the residual gas out of the closed chamber after the formation of the first passivation layer, the method further comprises:
cyclically executing the operation of filling the closed chamber with the preset gas, retaining the preset gas in the closed chamber for the first preset time period and drawing out the preset gas for many times.

5. The preparation method of the array substrate according to claim 1 , wherein the sequentially forming the third passivation layer and the second passivation layer on the base substrate in the closed chamber comprises:
forming the third passivation layer in the closed chamber by adopting a second reaction gas; and
forming the second passivation layer on a side, facing away from the base substrate, of the third passivation layer by adopting a third reaction gas;
wherein, the second reaction gas and the third reaction gas have same components as the first reaction gas, and concentrations of the first reaction gas, the second reaction gas and the third reaction gas in the closed chamber decrease in sequence.

6. The preparation method of the array substrate according to claim 1 , wherein after the completion of the preparation of the first passivation layer, the method further comprises:
sequentially etching the first passivation layer, the second passivation layer and the third passivation layer at preset positions by adopting an etching process to form via holes with opening areas decreasing in sequence in a direction from the first passivation layer to the base substrate; and
forming an electrode layer on a side, facing away from the base substrate, of the first passivation layer, wherein an orthographic projection of the electrode layer on the base substrate covers the via holes and the first passivation layer.

7. The preparation method of the array substrate according to claim 6 , wherein the electrode layer is an indium tin oxide transparent electrode layer.

8. An array substrate, wherein the array substrate is formed by adopting the preparation method of the array substrate according to claim 1 .

Assignees

• Beijing Boe Optoelectronics Tech Co Ltd
• Boe Technology Group Co Ltd

Inventors

• Chen Wei
• Zhang Zhiqiang
• Liu Hanqing
• Li Yangheng
• Jia Mingming
• Li Xin
• Song Yong

Classifications

• H10W20/081

  by forming openings in the dielectric parts · CPC title

• H10W20/056 Primary

  by filling conductive material into holes, grooves or trenches · CPC title

• H10W20/47

  comprising two or more dielectric layers having different properties, e.g. different dielectric constants · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P50/73

  using masks for insulating materials · CPC title