Method and structure providing optical isolation of a waveguide on a silicon-on-insulator substrate

Patent metadata

Field	Value
Publication number	US-11237327-B2
Application number	US-201916543446-A
Country	US
Kind code	B2
Filing date	Aug 16, 2019
Priority date	Jun 4, 2012
Publication date	Feb 1, 2022
Grant date	Feb 1, 2022

Abstract

Disclosed are a method and structure providing a silicon-on-insulator substrate on which photonic devices are formed and in which a core material of a waveguide is optically decoupled from a support substrate by a shallow trench isolation region.

First claim

What is claimed as new and desired to be protected by Letters Patent of the United States is:

1. A method of forming an integrated structure, the method comprising:
forming a shallow trench isolation region in a first semiconductor substrate;
filing a trench of the shallow trench isolation region with a first dielectric material having a first index of refraction;
attaching a second substrate to the first semiconductor substrate, wherein the second substrate includes a second dielectric material and a semiconductor material over the second dielectric material, wherein the semiconductor material has a second index of refraction greater than the first index of refraction, and wherein the second dielectric material faces the first substrate; and
forming a waveguide from the second substrate after attaching the second substrate to the first semiconductor substrate by thinning the semiconductor material and subsequently patterning the semiconductor material,
wherein the waveguide is located over the shallow trench isolation region, and
wherein the first dielectric material comprises a solid.

2. The method according to claim 1 , wherein the first dielectric material comprises an oxide.

3. The method according to claim 1 , wherein a combined thickness of the second dielectric material and the shallow trench isolation region is at least 1000 nm.

4. The method according to claim 1 , wherein the first semiconductor substrate and the second substrate each comprises silicon.

5. The method according to claim 1 , wherein the waveguide comprises a core region surrounded by a cladding region, the cladding region being formed at least in part by the second dielectric material.

6. The method according to claim 5 , wherein the core region comprises silicon and the cladding region comprises silicon dioxide.

7. The method according to claim 1 , further comprising forming an electronic circuit element in an area of the semiconductor material of the second substrate.

8. The method according to claim 1 , wherein the first semiconductor substrate and the second substrate together form a silicon-on-insulator structure.

9. The method according to claim 1 , further comprising disposing a third dielectric material over the semiconductor material of the second substrate.

10. The method according to claim 9 , wherein the third dielectric material is part of an interlayer dielectric structure.

11. A method of forming a silicon-on-insulator structure, the method comprising:
forming a trench in a first semiconductor substrate;
filing the trench with a first dielectric material having a first index of refraction to form a shallow trench isolation region;
attaching a second substrate to the first semiconductor substrate, wherein the second substrate includes a second dielectric material and a semiconductor material over the second dielectric material, wherein the semiconductor material has a second index of refraction greater than the first index of refraction, and wherein the second dielectric material faces the first substrate; and
forming a waveguide from the second substrate after attaching the second substrate to the first semiconductor substrate by thinning the semiconductor material and subsequently patterning the semiconductor material,
wherein the waveguide is aligned with the shallow trench isolation region, and
wherein the first dielectric material comprises a solid.

12. The method according to claim 11 , wherein the first dielectric material comprises an oxide.

13. The method according to claim 11 , wherein a combined thickness of the second dielectric material and the shallow trench isolation region is at least 1000 nm.

14. The method according to claim 11 , wherein the first semiconductor substrate and the second substrate each comprises silicon.

15. The method according to claim 11 , wherein the waveguide comprises a core region surrounded by a cladding region, the cladding region being formed at least in part by the second dielectric material.

16. The method according to claim 15 , wherein the core region comprises silicon and the cladding region comprises silicon dioxide.

17. The method according to claim 11 , further comprising forming an electronic circuit element in an area of the semiconductor material of the second substrate.

18. The method according to claim 11 , further comprising disposing a third dielectric material over the semiconductor material of the second substrate.

19. The method according to claim 18 , wherein the third dielectric material is part of an interlayer dielectric structure.

Assignees

• Micron Technology Inc

Inventors

• Meade Roy E

Classifications

• H10W10/181

  Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers · CPC title

• H10W10/061

  using SOI processes together with lateral isolation, e.g. combinations of SOI and shallow trench isolations · CPC title

• H10W10/17

  formed using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title

• H10W10/014

  using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title

• H10P90/1906 Primary

  Preparing SOI wafers · CPC title