Transient voltage suppression device and manufacturing method therefor

Patent metadata

Field	Value
Publication number	US-11233045-B2
Application number	US-201917265541-A
Country	US
Kind code	B2
Filing date	Sep 4, 2019
Priority date	Aug 31, 2018
Publication date	Jan 25, 2022
Grant date	Jan 25, 2022

Abstract

A transient voltage suppression device includes a substrate; a first conductivity type well region disposed in the substrate and comprising a first well and a second well; a third well disposed on the substrate, a bottom part of the third well extending to the substrate; a fourth well disposed in the first well; a first doped region disposed in the second well; a second doped region disposed in the third well; a third doped region disposed in the fourth well; a fourth doped region disposed in the fourth well; a fifth doped region extending from inside of the fourth well to the outside of the fourth well, a portion located outside the fourth well being located in the first well; a sixth doped region disposed in the first well; a seventh doped region disposed below the fifth doped region and in the first well.

First claim

What is claimed is:

1. A transient voltage suppression device, comprising:
a substrate, the substrate being of a second conductivity type;
a first conductivity type well region disposed on the substrate and including a first well and a second well;
a third well disposed on the substrate and being of the second conductivity type, a bottom of the third well extending to the substrate, the first conductivity type and the second conductivity type being conductivity types opposite to each other;
a fourth well disposed in the first well and being of the second conductivity type;
isolation structures, the isolation structures comprising a first isolation portion disposed between the first well and the second well, and a second isolation portion disposed between the first well and the third well, the first isolation portion being adapted to isolate the first well and the second well from each other, and the second isolation portion being adapted to isolate the first well and the third well from each other;
a first doped region being of a first conductivity type and disposed in the second well;
a second doped region being of the second conductivity type and disposed in the third well;
a third doped region being of the second conductivity type and disposed in the fourth well;
a fourth doped region being of the first conductivity type and disposed in the fourth well;
a fifth doped region being of the first conductivity type, extending from inside of the fourth well to outside of the fourth well, and a portion of the fifth doped region outside the fourth well being located in the first well;
a sixth doped region being of the second conductivity type and disposed in the first well;
a seventh doped region being of the second conductivity type and disposed under the fifth doped region and in the first well, the fifth doped region being disposed between the fourth doped region and the sixth doped region, the fourth doped region being disposed between the third doped region and the fifth doped region;
a metal connecting-wire layer comprising a first metal connecting-wire and a second metal connecting-wire and located on the substrate, the first metal connecting-wire being electrically connected to the first doped region and the sixth doped region and serving as a first potential terminal, the second metal connecting-wire layer being electrically connected to the second doped region, the third doped region and the fourth doped region and serving as a second potential terminal.

2. The transient voltage suppression device of claim 1 , wherein the first potential terminal is adapted to be electrically connected to an input/output terminal, and the second potential terminal is adapted to be connected to ground.

3. The transient voltage suppression device of claim 1 , wherein the device further comprises an epitaxial layer disposed on the substrate, the first conductivity type well region being disposed in the epitaxial layer, the epitaxial layer being of the second conductivity type, the substrate having a doping concentration greater a doping concentration of the epitaxial layer.

4. The transient voltage suppression device of claim 1 , wherein the isolation structures are those formed by filling an insulating material in isolating trenches.

5. The transient voltage suppression device of claim 4 , wherein the second isolation portion has a trench depth greater than or equal to a well depth of the third well.

6. The transient voltage suppression device of claim 1 , wherein the first doped region is used as a cathode region of a diode D 1 , the second doped region is used as an anode region of the diode D 1 , the sixth doped region is used as an emitter region of a PNP transistor, the fifth doped region is used as a base region of the PNP transistor and used as a collector region of an NPN transistor and a cathode region of a zener diode Z 1 , the seventh doped region is used as a collector region of the PNP transistor and used as a base region of the NPN transistor and an anode region of the zener diode Z 1 , and the fourth doped region is used as an emitter region of the NPN transistor; an equivalent parasitic resistance R 1 is formed between the seventh doped region and the third doped region, and an equivalent diode D 2 is formed between the sixth doped region and the fifth doped region; and the PNP transistor and the NPN transistor are equal to a silicon controlled rectifier.

7. The transient voltage suppression device of claim 1 , wherein the device further comprises an insulating structure disposed on the fifth doped region.

8. The transient voltage suppression device of claim 1 , wherein the third well has a doping concentration in a range from 5E18 cm −3 to 5E19 cm −3 .

9. The transient voltage suppression device of claim 3 , wherein the first well and the second well have a doping concentration in a range from 1E14 cm −3 to 1E15 cm −3 , and the epitaxial layer has a doping concentration in a range from 1E14 cm −3 to 1E15 cm −3 .

10. A method for manufacturing a transient voltage suppression device, comprising:
forming a mask layer on a substrate of a second conductivity type, and then performing lithography and etching the mask layer to expose a doping window of a second conductivity type well region;
doping the substrate with second conductivity type ions through the doping window of the second conductivity type well region to form a second region on a surface of the substrate;
growing an oxide layer as a doping blocking layer in the second region;
removing the mask layer, and doping areas of the surface of the substrate not covered by the doping blocking layer with first conductivity type ions to form a first region, the first conductivity type and the second conductivity type being conductivity types opposite to each other;
removing the doping blocking layer, and forming isolation structures, the isolation structures comprising a second isolation portion extending downwardly from an interface between the first region and the second region, and a first isolation portion dividing the first region into two portions;
performing a thermal drive-in, so that the first region diffuses to form a first well and a second well which are spaced from each other by the first isolation portion, and the second region diffuses to form a third well;
forming, by lithographing and doping, respectively a fourth well, a first doped region, a second doped region, a third doped region, a fourth doped region, a fifth doped region, a sixth doped region, and a seventh doped region;
forming a metal connecting-wire layer on the substrate, the metal connecting-wire layer including a first metal connecting-wire and a second metal connecting-wire, the first metal connecting-wire electrically connecting the first doped region to the sixth doped region as being used as a first potential terminal, and the second metal connecting-wire electrically connecting the second doped region, the third doped region and the fourth doped region to each other as being used as a second potential terminal;
wherein the fourth well is of the second conductivity type, and is formed in the first well; the first doped region is of the first conductivity type, and is formed in the second well; the second doped region is of the second conductivity type, and is formed in the third well; the third doped region is of the second conductivity type, and is formed in the fourth well; the fourth doped region is of the first conductivity type, and is formed in the fourth well; the fifth doped region is of the first conductivity type, extends from inside of the fourth well to outside of the fourth well, and a portion of the fifth doped region outside the fourth well is located in

Assignees

• Csmc Technologies Fab2 Co Ltd

Inventors

• Cheng Shikang
• Gu Yan
• Zhang Sen

Classifications

• H10D8/20

  Breakdown diodes, e.g. avalanche diodes · CPC title

• H10D62/115 Primary

  Dielectric isolations, e.g. air gaps · CPC title

• H10D89/931

  characterised by the dispositions of the protective arrangements · CPC title

• H10D62/103

  for increasing or controlling the breakdown voltage of reverse-biased devices · CPC title

• H10D8/25

  Zener diodes · CPC title