Wafer processing method
US-2024395620-A1 · Nov 28, 2024 · US
US11229986B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11229986-B2 |
| Application number | US-201916360681-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 21, 2019 |
| Priority date | Mar 29, 2018 |
| Publication date | Jan 25, 2022 |
| Grant date | Jan 25, 2022 |
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An annular grindstone includes a grindstone portion including a binding material, and abrasive grains which are dispersed into the binding material to be fixed, in which the binding material contains a nickel-iron alloy. Preferably, a contained ratio of iron in the nickel-iron alloy is in a range of 5 wt % or more to less than 60 wt %. More preferably, a contained ratio of iron in the nickel-iron alloy is in a range of 20 wt % or more to 50 wt % or less. Preferably, the annular grindstone includes the grindstone portion only. In addition, the annular grindstone further includes an annular base including a grip portion, in which the grindstone portion is exposed at an outer peripheral edge of the annular base.
Opening claim text (preview).
What is claimed is: 1. an annular grindstone comprising: a grindstone portion including a binding material, and abrasive grains which are dispersed into the binding material to be fixed by electrodeposition to the grindstone, wherein the binding material contains a nickel-iron alloy; wherein a contained ratio of iron in the nickel-iron alloy is in a range of 20 wt % or more to 50 wt % or less. 2. The annular grindstone according to claim 1 , wherein the annular grindstone comprises the grindstone portion only. 3. The annular grindstone according to claim 1 , further comprising: an annular base including a grip portion, wherein the grindstone portion is exposed at an outer peripheral edge of the annular base. 4. The annular grindstone according to claim 1 , wherein the corrosion rate of the grindstone portion is 0% when cutting water comprising carbon dioxide is supplied to the grindstone. 5. A process for cutting a semiconductor wafer using an annular grindstone and cutting water, the grindstone comprising: a grindstone portion including a binding material, and abrasive grains which are dispersed into the binding material to be fixed by electrodeposition to the grindstone, wherein the binding material contains a nickel-iron alloy; wherein a contained ratio of iron in the nickel-iron alloy is in a range of 20 wt % or more to 50 wt % or less; the process comprising: bringing the grindstone into contact with the semiconductor wafer; supplying the cutter water to the grindstone, wherein the cutter water comprises carbon dioxide. 6. The process of claim 5 wherein the cutting water has a specific resistance value of 0.1 MΩ·cm. 7. The process of claim 5 wherein the cutting water has a specific resistance value of 0.2 MΩ·cm. 8. The process of claim 5 , wherein the corrosion rate of the grindstone portion is 0% in response to the supplying the cutting water comprising carbon dioxide to the grindstone.
Accessories therefor · CPC title
metallic {or mixture of metals with ceramic materials, e.g. hard metals, "cermets", cements} · CPC title
Headstocks; Working-spindles; Features relating thereto · CPC title
having a special cutting edge section or blade section · CPC title
Cutting members therefor · CPC title
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