Pressure sensing methods

Patent metadata

Field	Value
Publication number	US-11228121-B2
Application number	US-201916443332-A
Country	US
Kind code	B2
Filing date	Jun 17, 2019
Priority date	Jun 17, 2019
Publication date	Jan 18, 2022
Grant date	Jan 18, 2022

Abstract

A pressure sensing method includes providing a first receive antenna array that receives a first signal at a first frequency, providing a second receive antenna array that receives a second signal at a second frequency that differs from the first frequency, coupling a diode to the first receive antenna array and the second receive antenna array, coupling a transmit antenna array to the diode, receiving, by the diode, the first signal at the first frequency and the second signal at the second frequency, outputting, by the diode, a third signal at a third frequency that is a difference between the first frequency and the second frequency, receiving, by the transmit antenna array from the diode, the third signal at the third frequency, and outputting, by the transmit antenna array, the third signal at the third frequency.

First claim

What is claimed is:

1. A pressure sensing method, comprising:
providing a first receive antenna array that receives a first signal at a first frequency;
providing a second receive antenna array that receives a second signal at a second frequency that differs from the first frequency;
coupling a diode to the first receive antenna array and the second receive antenna array;
coupling a transmit antenna array to the diode;
receiving, by the diode, the first signal at the first frequency and the second signal at the second frequency;
outputting, by the diode, a third signal at a third frequency that is a difference between the first frequency and the second frequency;
receiving, by the transmit antenna array from the diode, the third signal at the third frequency; and
outputting, by the transmit antenna array, the third signal at the third frequency.

2. The pressure sensing method of claim 1 , wherein said outputting, by the transmit antenna array, comprises outputting the third signal at the third frequency to a receiver, and wherein the pressure sensing method further comprises determining, by the receiver, a pressure level from the third signal at the third frequency.

3. The pressure sensing method of claim 1 , further comprising disposing the first receive antenna array, the second receive antenna array, and the transmit antenna array on a first substrate.

4. The pressure sensing method of claim 1 , further comprising:
connecting, by a first microstrip feed, the transmit antenna array to the diode; and
connecting, by a second microstrip feed, the first receive antenna array and the second receive antenna array to the diode.

5. The pressure sensing method of claim 1 , further comprising:
operating the first receive antenna array and the second receive antenna array in a W-band; and
operating the transmit antenna array in an X-band.

6. The pressure sensing method of claim 1 , further comprising disposing at least one cavity within at least one substrate underneath at least a portion of one or more of the first receive antenna array, the second receive antenna array, or the transmit antenna array.

7. The pressure sensing method of claim 6 , further comprising:
forming a vent channel within the at least one substrate, wherein the vent channel is fluidly connected to the at least one cavity; and
forming a vent outlet within the at least one substrate, wherein the vent outlet is fluidly connected to the vent channel.

8. The pressure sensing method of claim 6 , further comprising positioning at least one diaphragm over the at least one cavity.

9. The pressure sensing method of claim 1 , further comprising providing a first substrate that is a P-type doped semiconductor substrate.

10. The pressure sensing method of claim 9 , further comprising doping a first N-type impurity on the first substrate.

11. The pressure sensing method of claim 10 , further comprising doping a second N-type impurity on the first N-type impurity to form, at least in part, the diode.

12. The pressure sensing method of claim 11 , further comprising depositing an oxidation layer over the first substrate.

13. The pressure sensing method of claim 12 , further comprising depositing a metal over the oxidation layer to form the first receive antenna array, the second receive antenna array, a first microstrip feed, a second microstrip feed, the transmit antenna array, and electrical contacts.

14. The pressure sensing method of claim 13 , further comprising forming a first cavity, a vent channel, and a vent outlet into the first substrate.

15. The pressure sensing method of claim 14 , further comprising:
depositing a backside ground plane onto a second substrate; and
bonding the second substrate to the first substrate.

16. The pressure sensing method of claim 1 , further comprising providing a first substrate that is an intrinsic semiconducting substrate.

17. The pressure sensing method of claim 16 , further comprising doping the first substrate with a first P-type impurity.

18. The pressure sensing method of claim 17 , further comprising doping a first N-type impurity over a portion of the first P-type impurity on the first substrate.

19. The pressure sensing method of claim 18 , further comprising doping a second P-type impurity over a portion of the first N-type impurity to define, at least in part, the diode.

20. The pressure sensing method of claim 19 , further comprising depositing a passivation layer over the first substrate.

21. The pressure sensing method of claim 20 , further comprising depositing a first metal layer over the passivation layer to form electronic contacts.

22. The pressure sensing method of claim 21 , further comprising depositing a second metal layer over the first metal layer to form a microstrip feed network.

23. The pressure sensing method of claim 22 , further comprising depositing a third metal layer on the first substrate opposite from the second metal layer to form a backside ground plane.

24. The pressure sensing method of claim 23 , further comprising depositing a fourth metal layer on a second substrate to form the first receive antenna array, the second receive antenna array, and the transmit antenna array.

25. The pressure sensing method of claim 24 , further comprising forming at least one cavity in the first substrate or the second substrate.

26. The pressure sensing method of claim 25 , wherein said forming the at least one cavity comprises:
forming a first cavity formed in the first substrate underneath at least a portion of the transmit antenna array; and
forming a second cavity in the second substrate underneath at least a portion of one or both of the first receive antenna array or the second receive antenna array.

27. The pressure sensing method of claim 26 , further comprising bonding the first substrate to the second substrate.

28. A pressure sensing method, comprising:
providing a first receive antenna array that receives a first signal at a first frequency;
providing a second receive antenna array that receives a second signal at a second frequency that differs from the first frequency;
coupling a diode to the first receive antenna array and the second receive antenna array;
coupling a transmit antenna array to the diode;
disposing the first receive antenna array, the second receive antenna array, and the transmit antenna array on at least one substrate;
disposing at least one cavity within the at least one substrate underneath at least a portion of one or more of the first receive antenna array, the second receive antenna array, or the transmit antenna array;
connecting, by a first microstrip feed, the transmit antenna array to the diode;
connecting, by a second microstrip feed, the first receive antenna array and the second receive antenna array to the diode;
receiving, by the diode, the first signal at the first frequency and the second signal at the second frequency;
outputting, by the diode, a third signal at a third frequency that is a difference between the first frequency and the second frequency;
receiving, by the transmit antenna array from the diode, the third signal at the third frequency; and
outputting, by the transmit antenna array, the third signal at the third frequency, wherein said outputting, by the transmit antenna array, comprises outputting the third signal at the third frequency to a r

Assignees

• Boeing Co

Inventors

• Rogers John E

Classifications

• H01Q21/30 Primary

  Combinations of separate antenna units operating in different wavebands and connected to a common feeder system · CPC title

• H01Q21/065

  Patch antenna array · CPC title

• G01H3/04

  Frequency · CPC title

• G01H3/00

  Measuring {characteristics of} vibrations by using a detector in a fluid (G01H7/00, G01H9/00, G01H11/00 take precedence) · CPC title