Rare earth nitride and group III-nitride structure or device
US-10043871-B1 · Aug 7, 2018 · US
Rare earth nitride structures and devices and method for removing a passivating capping
US11217743B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11217743-B2 |
| Application number | US-201716465804-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 7, 2017 |
| Priority date | Dec 7, 2016 |
| Publication date | Jan 4, 2022 |
| Grant date | Jan 4, 2022 |
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- Title
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Abstract
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The present invention concerns a structure or device comprising a rare earth nitride material, and a removable capping for passivating the rare earth nitride material.
First claim
Opening claim text (preview).
The invention claimed is: 1. A device comprising: a rare earth nitride material, and a removable capping for passivating the rare earth nitride material, wherein the removable passivating capping consists solely of samarium, europium, thulium, or indium; or includes or consists solely of antimony, bismuth, zinc, arsenic, silver, strontium, cadmium, calcium, lead, sodium, or tellurium. 2. The device according to claim 1 , wherein the capping is an epitaxial capping layer, or the capping is a polycrystalline or amorphous capping layer. 3. The device according to claim 1 , wherein the rare earth nitride material includes or consists of a rare earth nitride selected from the following group: lanthanum nitride (LaN), praseodymium nitride (PrN), neodymium nitride (NdN), samarium nitride (SmN), europium nitride (EuN), gadolinium nitride (GdN), terbium nitride (TbN), dysprosium nitride (DyN), holmium nitride (HoN), erbium nitride (ErN), thulium nitride (TmN), ytterbium nitride (YbN), lutetium nitride (LuN). 4. The device according to claim 1 , wherein the capping is removable without modification of the bulk structural properties of the rare-earth nitride material. 5. The device according to claim 1 , wherein the rare earth nitride material includes at least one layer or multiple successive layers, the at least one layer or multiple layers comprising or consisting of a rare earth nitride and/or an alloy of rare earth nitrides. 6. The device according to claim 1 , further including a substrate or template, the rare earth nitride material being located on the substrate or template or in direct contact with the substrate or template. 7. The device according to claim 1 , further including a substrate or template, and at least one additional optical or electrical active layer located between the substrate or template and the rare earth nitride material.
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Classifications
Conductivity type · CPC title
- H10P14/3402Primary
characterised by the chemical composition · CPC title
- H10P14/38Primary
characterised by treatments done after the formation of the materials · CPC title
Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED] · CPC title
Materials of the active region · CPC title
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Frequently asked questions
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- What does patent US11217743B2 cover?
- The present invention concerns a structure or device comprising a rare earth nitride material, and a removable capping for passivating the rare earth nitride material.
- Who is the assignee on this patent?
- Victoria Link Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10P14/3402. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 04 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).