Rare earth nitride and group III-nitride structure or device

Patent metadata

Field	Value
Publication number	US-10043871-B1
Application number	US-201715480406-A
Country	US
Kind code	B1
Filing date	Apr 6, 2017
Priority date	Apr 6, 2017
Publication date	Aug 7, 2018
Grant date	Aug 7, 2018

Abstract

Structure or device comprises a AlxGa1-xN or InyGa1-yN layer or substrate, a rare earth nitride epitaxial layer, and an AlzGa1-zN epitaxial interlayer between the rare earth nitride epitaxial layer and the AlxGa1-xN or InyGa1-yN layer or substrate. The interlayer is in direct contact with the rare earth nitride epitaxial layer and the AlxGa1-xN or InyGa1-yN layer or substrate.

First claim

The invention claimed is:

1. A device comprising:
an Al x Ga 1-x N or In y Ga 1-y N layer or substrate where 0≤x<0.7 and 0<y≤1,
at least one rare earth nitride layer, and
an Al z Ga 1-z N interlayer between the at least one rare earth nitride layer and the Al x Ga 1-x N or In y Ga 1-y N layer or substrate where 1≥z≥0.8, wherein the Al z Ga 1-z N interlayer is in direct contact with the at least one rare earth nitride layer and the Al x Ga 1-x N or In y Ga 1-y N layer or substrate,
wherein the Al x Ga 1-x N or In y Ga 1-y N layer is a hexagonal crystal layer or the Al x Ga 1-x N or In y Ga 1-y N substrate is a hexagonal crystal substrate, the at least one rare earth nitride layer is a rare earth nitride epitaxial crystal layer and the Al z Ga 1-z N interlayer is an Al z Ga 1-z N epitaxial crystal layer, and
wherein the hexagonal crystal layer or hexagonal crystal substrate has a hexagonal net with a six-fold symmetry.

2. The device according to claim 1 , wherein the hexagonal crystal layer or hexagonal crystal substrate has a hexagonal wurtzite structure.

3. The device according to claim 1 , wherein the rare earth nitride epitaxial layer comprises a fully (001) oriented epitaxial layer.

4. The device according to claim 1 , wherein the rare earth nitride epitaxial layer comprises a fully (111) oriented epitaxial layer.

5. The device according to claim 1 , wherein the Al z Ga 1-z N epitaxial interlayer consists of or comprises between two and twelve monolayers.

6. The device according to claim 1 , further including a capping for passivating the rare earth nitride epitaxial layer.

7. The device according to claim 1 , wherein the rare earth nitride epitaxial layer includes or consists of at least one rare earth nitride selected from the following group: lanthanum nitride (LaN), cerium nitride (CeN), praseodymium nitride (PrN), neodymium nitride (NdN), samarium nitride (SmN), europium nitride (EuN), gadolinium nitride (GdN), terbium nitride (TbN), dysprosium nitride (DyN), holmium nitride (HoN), erbium nitride (ErN), thulium nitride (TmN), ytterbium nitride (YbN), lutetium nitride (LuN).

8. The device according to claim 1 , wherein the rare earth nitride epitaxial layer includes or consists of at least one rare earth nitride alloy of any two or more of the rare earth nitrides selected from the following group: lanthanum nitride (LaN), cerium nitride (CeN), praseodymium nitride (PrN), neodymium nitride (NdN), samarium nitride (SmN), europium nitride (EuN), gadolinium nitride (GdN), terbium nitride (TbN), dysprosium nitride (DyN), holmium nitride (HoN), erbium nitride (ErN), thulium nitride (TmN), ytterbium nitride (YbN), lutetium nitride (LuN).

9. The device according to claim 1 , wherein the rare earth nitride epitaxial layer is doped with at least one element that is beryllium, magnesium, calcium, strontium, barium or radium.

10. The device according to claim 1 , further including at least one additional rare earth nitride epitaxial layer or multiple successive rare earth nitride epitaxial layers, the at least one additional rare earth nitride epitaxial layer or multiple successive rare earth nitride epitaxial layers comprising or consisting of a rare earth nitride and/or an alloy of rare earth nitrides.

11. The device according to claim 1 , further including an additional optical active layer or region located on the rare earth nitride epitaxial layer, or an additional electrical active layer or region located on the rare earth nitride epitaxial layer.

12. The device according to claim 11 , wherein the additional optical active layer or region located on the rare earth nitride epitaxial layer, or the additional electrical active layer or region is a Group III-nitride layer or region.

13. The device according to claim 1 , wherein the hexagonal crystal layer is a (0001)-oriented layer or the hexagonal crystal substrate is a (0001)-oriented hexagonal substrate.

14. The device according to claim 1 , wherein the Al x Ga 1-x N or In y Ga 1-y N crystal layer is located on one of the following materials: GaN, AlN, InN, or any alloys thereof, or Al 2 O 3 , or ZnO, or Zn x Mg 1-x O with x ranging from 1 to 0.4.

15. The device according to claim 1 , wherein the rare earth nitride epitaxial layer is SmN.

16. The device according to claim 1 , wherein the Al x Ga 1-x N layer or the Al x Ga 1-x N substrate comprises GaN and the Al z Ga 1-z N interlayer comprises AlN.

17. The device according to claim 1 , wherein the Al x Ga 1-x N or In y Ga 1-y N layer is a polycrystalline layer or the Al x Ga 1-x N or In y Ga 1-y N substrate is a polycrystalline substrate, the at least one rare earth nitride layer is a polycrystalline rare earth nitride layer and the Al z Ga 1-z N interlayer is a polycrystalline layer.

18. A device comprising:
an Al x Ga 1-x N or In y Ga 1-y N layer or substrate where 0≤x<0.7 and 0<y≤1;
at least one rare earth nitride layer; and
an Al z Ga 1-z N interlayer between the at least one rare earth nitride layer and the Al x Ga 1-x N or In y Ga 1-y N layer or substrate where 1≥z≥0.8,
wherein the Al z Ga 1-z N interlayer is in direct contact with the at least one rare earth nitride layer and the Al x Ga 1-x N or In y Ga 1-y N layer or substrate, and
wherein the Al z Ga 1-z N interlayer consists of or comprises between two and twelve monolayers.

19. The device comprising:
an Al x Ga 1-x N or In y Ga 1-y N layer or substrate where 0≤x<0.7 and 0<y≤1;
at least one rare earth nitride layer; and
an Al z Ga 1-z N interlayer between the at least one rare earth nitride layer and the Al x Ga 1-x N or In y Ga 1-y N layer or substrate where 1≥z≥0.8,
wherein the Al z Ga 1-z N interlayer is in direct contact with the at least one rare earth nitride layer and the Al x Ga 1-x N or In y Ga 1-y N layer or substrate, and
wherein the Al x Ga 1-x N or In y Ga 1-y N layer is a polycrystalline layer or the Al x Ga 1-x N or In y Ga 1-y N substrate is a polycrystalline substrate, the at least one rare earth nitride layer is a polycrystalline rare earth nitride layer and the Al z Ga 1-z N interlayer is a polycrystalline layer.

Assignees

• Natali Franck
• Vezian Stephane Ange
• Ecole Polytechnique Fed Lausanne Epfl

Inventors

• Natali Franck
• Vézian Stéphane Ange

Classifications

• H10P14/3466

  Crystal orientation · CPC title

• H10P14/3416

  Nitrides · CPC title

• H10P14/3402

  characterised by the chemical composition · CPC title

• H10P14/3251

  consisting of three or more layers · CPC title

• H10P14/3216

  Nitrides · CPC title