Method of manufacturing semiconductor device and semiconductor manufacturing apparatus

Patent metadata

Field	Value
Publication number	US-11217431-B2
Application number	US-201916513755-A
Country	US
Kind code	B2
Filing date	Jul 17, 2019
Priority date	Sep 13, 2017
Publication date	Jan 4, 2022
Grant date	Jan 4, 2022

Abstract

In one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes housing the substrate provided with the first film in a chamber, and introducing a first gas into the chamber. The method further includes generating plasma discharge of the first gas in the chamber or applying radiation to the first gas in the chamber. The method further includes introducing a second gas containing a metal component into the chamber to cause the metal component to infiltrate into the first film after the generation of the plasma discharge or the application of the radiation is started.

First claim

The invention claimed is:

1. A semiconductor manufacturing apparatus comprising:
a chamber that houses a substrate provided with a first film;
a first gas introduction module that introduces a first gas into the chamber;
a gas processing module that generates plasma discharge of the first gas in the chamber or applies radiation to the first gas in the chamber;
a second gas introduction module introduces a second gas containing a metal component into the chamber to cause the metal component to infiltrate into the first film; and
a third gas introduction module that introduces, into the chamber, a third gas that oxidizes or reduces the metal component infiltrated into the first film,
wherein
the first gas introduction module is located at a first distance from a stage that supports the substrate, and
the third gas introduction module is located at a third distance from the stage, the third distance being smaller than the first distance.

2. The apparatus of claim 1 , wherein
the substrate is housed in the chamber after a first pattern is formed on the first film, and
the metal component infiltrates into the first pattern.

3. The apparatus of claim 1 , wherein the first gas is a noble gas.

4. The apparatus of claim 1 , wherein the second gas is introduced into the chamber that contains a product produced from the first gas.

5. The apparatus of claim 1 , wherein the first film is a film containing carbon.

6. The apparatus of claim 1 , wherein the first film includes at least one of a photoresist film, a self-organized film, a spin on carbon film and an amorphous carbon film.

7. The apparatus of claim 1 , wherein
the second gas introduction module is located at a second distance from the stage, the second distance being smaller than the first distance.

8. The apparatus of claim 7 , wherein the first distance is a distance deactivating a product produced from the first gas before the product arrives at the first film.

9. The apparatus of claim 1 , wherein the chamber includes a first portion housing the substrate, and a second portion provided with first and second inlets from which the first and second gases are introduced into the second portion, respectively, the second portion protruding from the first portion.

10. A semiconductor manufacturing apparatus comprising:
a chamber that houses a substrate provided with a first film;
a first gas introduction module that introduces a first gas into the chamber;
a gas processing module that generates plasma discharge of the first gas in the chamber;
a second gas introduction module that introduces a second gas containing a metal component into the chamber; and
a third gas introduction module that introduces, into the chamber, a third gas that oxidizes or reduces the metal component infiltrated into the first film,
wherein
the first gas introduction module is located at a first distance from a stage that supports the substrate,
the second gas introduction module is located at a second distance from the stage, the second distance being smaller than the first distance, and
the third gas introduction module is located at a third distance from the stage, the third distance being smaller than the first distance.

11. A semiconductor manufacturing apparatus comprising:
a chamber that houses a substrate provided with a first film;
a first gas introduction module that introduces a first gas into the chamber;
a gas processing module that applies radiation to the first gas in the chamber;
a second gas introduction module that introduces a second gas containing a metal component into the chamber; and
a third gas introduction module that introduces, into the chamber, a third gas that oxidizes or reduces the metal component infiltrated into the first film,
wherein
the first gas introduction module is located at a first distance from a stage that supports the substrate, and
the third gas introduction module is located at a third distance from the stage, the third distance being smaller than the first distance.

12. The apparatus of claim 1 , wherein the first gas introduction module is provided to be distant from the gas processing module.

13. The apparatus of claim 10 , wherein the first gas introduction module is provided to be distant from the gas processing module.

Assignees

• Toshiba Memory Corp
• Kioxia Corp

Inventors

• Saito Ryuichi
• Morita Seiji
• Yamamoto Ryosuke

Classifications

• H10P95/08

  Planarisation of organic insulating materials · CPC title

• H10P76/204

  of organic photoresist masks · CPC title

• H10P50/73

  using masks for insulating materials · CPC title

• G03F7/168

  Finishing the coated layer, e.g. drying, baking, soaking · CPC title

• G03F7/167

  from the gas phase, by plasma deposition (G03F7/2035 takes precedence) · CPC title