Patterning transition metals in integrated circuits
US-9299638-B2 · Mar 29, 2016 · US
US11214885B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11214885-B2 |
| Application number | US-202016987978-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 7, 2020 |
| Priority date | Aug 29, 2016 |
| Publication date | Jan 4, 2022 |
| Grant date | Jan 4, 2022 |
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A method creating a patterned film with cuprous oxide and light comprising the steps of electrodepositing copper from a solution onto a substrate; illuminating selected areas of said deposited copper with light having photon energies above the band gap energy of 2.0 eV to create selected illuminated sections and non-illuminated sections; and stripping non-illuminated sections leaving said illuminated sections on the substrate. An additional step may include galvanically replacing the copper with one or more noble metals.
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What is claimed is: 1. A method of creating a pattern on a substrate using electrodeposition and light comprising the steps of: on selected areas of said substrate, depositing material by electrodeposition and by illumination to create a deposition rate of material that is greater than in the non-illuminated areas; and reversing the polarity while maintaining the illumination of said selected areas to cause said non-illuminated areas to have a higher rate of dissolution than said selected areas. 2. The method of claim 1 wherein said deposited material is copper. 3. The method of claim 1 wherein said illumination is changed by time to create three-dimensional patterns. 4. The method of claim 1 wherein said illumination is changed by intensity to create three-dimensional patterns. 5. The method of claim 1 wherein said illumination is changed by color of the illumination to create three-dimensional patterns. 6. The method of claim 1 wherein said illumination is changed by a combination of color of the illumination, time or intensity to create three-dimensional patterns.
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