Optical component and method of manufacturing optical component
US-2019391337-A1 · Dec 26, 2019 · US
US11214491B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11214491-B2 |
| Application number | US-201816763479-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 16, 2018 |
| Priority date | Nov 17, 2017 |
| Publication date | Jan 4, 2022 |
| Grant date | Jan 4, 2022 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
A method of forming a functionalized device substrate is provided that includes the steps of: forming a graphene layer on a growth substrate; applying a polyimide layer to a glass, glass-ceramic or ceramic substrate, wherein a coupling agent couples the polyimide layer to the said substrate; coupling the polyimide layer to the graphene layer on the growth substrate; and peeling the growth substrate from the graphene layer.
Opening claim text (preview).
What is claimed is: 1. A method of forming a functionalized device substrate, comprising the steps of: forming a conductive layer on a growth substrate; applying a polymeric layer to a device substrate wherein the polymeric layer comprises a polyimide layer and, wherein a coupling agent couples the polymeric layer to the device substrate; coupling the polymeric layer to the conductive layer on the growth substrate; and peeling the growth substrate from the conductive layer. 2. The method of claim 1 , wherein the conductive layer comprises a graphene layer. 3. The method of claim 2 , wherein the step of forming the conductive layer comprises: forming a graphene layer on the growth substrate, the growth substrate comprising one or more of copper, nickel, silicon carbide, germanium, silver, iron, stainless steel, sapphire, platinum, iridium, ruthenium, cobalt and a copper-nickel alloy. 4. The method of claim 1 , wherein the coupling agent comprises an aminosilane. 5. The method of claim 1 , wherein the device substrate comprises one or more of an aluminosilicate and a borosilicate glass. 6. The method of claim 1 , wherein the applying step further comprises: heating the polymeric layer, coupling agent and device substrate to a temperature in the range from about 90° C. to about 130° C. 7. A method of forming a functionalized device substrate, comprising the steps of: forming a graphene layer on a growth substrate; applying a polyimide layer to a glass, glass-ceramic or ceramic substrate, wherein a coupling agent couples the polyimide layer to the glass, glass-ceramic or ceramic substrate; coupling the polyimide layer to the graphene layer on the growth substrate; and peeling the growth substrate from the graphene layer. 8. The method of claim 7 , wherein the step of applying the polyimide layer further comprises the step of: mixing the coupling agent and a precursor of the polyimide and coating the glass, glass-ceramic or ceramic substrate with the coupling agent, the precursor and the polyimide layer. 9. The method of claim 7 , wherein the step of applying the polyimide layer further comprises: applying the coupling agent to the glass, glass-ceramic or ceramic substrate; and applying the polyimide layer to the coupling agent. 10. The method of claim 7 , wherein the applying the polyimide layer step is conducted with a spin coating process. 11. The method of claim 7 , wherein the step of coupling the polyimide layer to the graphene layer further comprises: heating the polyimide layer at a temperature of from about 90° C. to about 180° C. 12. The method of claim 7 , wherein the step of coupling the polyimide layer to the graphene layer further comprises: heating the polyimide layer to a temperature of from about 100° C. to about 150° C. 13. The method of claim 7 , wherein the step of coupling the polyimide layer to the graphene layer further comprises the step of: pressing the polyimide layer to the graphene layer at a pressure of about 250 psi. 14. The method of claim 7 , wherein the step of coupling the polyimide layer to the graphene layer further comprises: pressing the polyimide layer to the graphene layer at a pressure of from about 100 psi to about 350 psi.
Electronic properties · CPC title
After-treatment · CPC title
by mechanical means · CPC title
Adding a layer before coating · CPC title
Spin coating · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.