Direct graphene transfer and graphene-based devices

US11214491B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11214491-B2
Application numberUS-201816763479-A
CountryUS
Kind codeB2
Filing dateNov 16, 2018
Priority dateNov 17, 2017
Publication dateJan 4, 2022
Grant dateJan 4, 2022

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  5. First independent claim

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Abstract

Official abstract text for this publication.

A method of forming a functionalized device substrate is provided that includes the steps of: forming a graphene layer on a growth substrate; applying a polyimide layer to a glass, glass-ceramic or ceramic substrate, wherein a coupling agent couples the polyimide layer to the said substrate; coupling the polyimide layer to the graphene layer on the growth substrate; and peeling the growth substrate from the graphene layer.

First claim

Opening claim text (preview).

What is claimed is: 1. A method of forming a functionalized device substrate, comprising the steps of: forming a conductive layer on a growth substrate; applying a polymeric layer to a device substrate wherein the polymeric layer comprises a polyimide layer and, wherein a coupling agent couples the polymeric layer to the device substrate; coupling the polymeric layer to the conductive layer on the growth substrate; and peeling the growth substrate from the conductive layer. 2. The method of claim 1 , wherein the conductive layer comprises a graphene layer. 3. The method of claim 2 , wherein the step of forming the conductive layer comprises: forming a graphene layer on the growth substrate, the growth substrate comprising one or more of copper, nickel, silicon carbide, germanium, silver, iron, stainless steel, sapphire, platinum, iridium, ruthenium, cobalt and a copper-nickel alloy. 4. The method of claim 1 , wherein the coupling agent comprises an aminosilane. 5. The method of claim 1 , wherein the device substrate comprises one or more of an aluminosilicate and a borosilicate glass. 6. The method of claim 1 , wherein the applying step further comprises: heating the polymeric layer, coupling agent and device substrate to a temperature in the range from about 90° C. to about 130° C. 7. A method of forming a functionalized device substrate, comprising the steps of: forming a graphene layer on a growth substrate; applying a polyimide layer to a glass, glass-ceramic or ceramic substrate, wherein a coupling agent couples the polyimide layer to the glass, glass-ceramic or ceramic substrate; coupling the polyimide layer to the graphene layer on the growth substrate; and peeling the growth substrate from the graphene layer. 8. The method of claim 7 , wherein the step of applying the polyimide layer further comprises the step of: mixing the coupling agent and a precursor of the polyimide and coating the glass, glass-ceramic or ceramic substrate with the coupling agent, the precursor and the polyimide layer. 9. The method of claim 7 , wherein the step of applying the polyimide layer further comprises: applying the coupling agent to the glass, glass-ceramic or ceramic substrate; and applying the polyimide layer to the coupling agent. 10. The method of claim 7 , wherein the applying the polyimide layer step is conducted with a spin coating process. 11. The method of claim 7 , wherein the step of coupling the polyimide layer to the graphene layer further comprises: heating the polyimide layer at a temperature of from about 90° C. to about 180° C. 12. The method of claim 7 , wherein the step of coupling the polyimide layer to the graphene layer further comprises: heating the polyimide layer to a temperature of from about 100° C. to about 150° C. 13. The method of claim 7 , wherein the step of coupling the polyimide layer to the graphene layer further comprises the step of: pressing the polyimide layer to the graphene layer at a pressure of about 250 psi. 14. The method of claim 7 , wherein the step of coupling the polyimide layer to the graphene layer further comprises: pressing the polyimide layer to the graphene layer at a pressure of from about 100 psi to about 350 psi.

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What does patent US11214491B2 cover?
A method of forming a functionalized device substrate is provided that includes the steps of: forming a graphene layer on a growth substrate; applying a polyimide layer to a glass, glass-ceramic or ceramic substrate, wherein a coupling agent couples the polyimide layer to the said substrate; coupling the polyimide layer to the graphene layer on the growth substrate; and peeling the growth subst…
Who is the assignee on this patent?
Corning Inc, Inst Of Photonics Sciences, Icfo—The Inst Of Photonic Sciences, and 1 more
What technology area does this patent fall under?
Primary CPC classification C01B32/194. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Jan 04 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).