Semiconductor manufacturing device with embedded fluid conduits

Patent metadata

Field	Value
Publication number	US-11213891-B2
Application number	US-201916540801-A
Country	US
Kind code	B2
Filing date	Aug 14, 2019
Priority date	Apr 21, 2015
Publication date	Jan 4, 2022
Grant date	Jan 4, 2022

Abstract

Provided herein are approaches for forming a conduit embedded within a component of a semiconductor manufacturing device (e.g., an ion implanter) using an additive manufacturing process (e.g., 3-D printing), wherein the conduit is configured to deliver a fluid throughout the component to provide heating, cooling, and gas distribution thereof. In one approach, the conduit includes a set of raised surface features formed on an inner surface of the conduit for varying fluid flow characteristics within the conduit. In another approach, the conduit may be formed in a helical configuration. In another approach, the conduit is formed with a polygonal cross section. In another approach, the component of the ion implanter includes at least one of an ion source, a plasma flood gun, a cooling plate, a platen, and/or an arc chamber base.

First claim

What is claimed is:

1. An ion source, comprising:
a tubular component including a conduit embedded between an interior surface and an exterior surface of a sidewall, wherein the conduit includes a set of raised features formed on an inner surface of the conduit, and wherein the conduit has a pentagonal cross-section defined by a bottom surface, a set of sidewalls, and a substantially triangular-shaped top portion; and
a base section including an inlet and an outlet, wherein the conduit is connected with the inlet and the outlet, and wherein the inlet, the outlet, and the conduit operate to deliver a cooling fluid.

2. The ion source of claim 1 , the set of raised features extending into an interior area of the conduit.

3. The ion source of claim 1 , the set of raised features including at least one of: a plurality of protrusions, and a plurality of ridges.

4. The ion source of claim 1 , the conduit arranged as a helix extending around an entire circumference of the sidewall.

5. The ion source of claim 1 , further comprising a second conduit embedded in the sidewall, the second conduit disposed adjacent the conduit.

6. The ion source of claim 5 , wherein the second conduit has a circular cross-section.

7. The ion source of claim 5 , wherein the second conduit is arranged as a helix extending around an entire circumference of the sidewall.

8. A semiconductor manufacturing device, comprising:
a tubular component including a conduit embedded between an interior surface and an exterior surface of a sidewall, wherein the conduit includes a set of raised features formed on an inner surface of the conduit, and wherein the conduit has a pentagonal cross-section defined by a bottom surface, a set of sidewalls, and a substantially triangular-shaped top portion; and
a base section coupled to the tubular component, the base section including an inlet and an outlet, wherein the conduit is connected with the inlet and the outlet, and wherein the inlet, the outlet, and the conduit operate to deliver a cooling fluid.

9. The semiconductor manufacturing device of claim 8 , the set of raised features extending into an interior area of the conduit.

10. The semiconductor manufacturing device of claim 8 , the set of raised features including at least one of: a plurality of protrusions, and a plurality of ridges.

11. The semiconductor manufacturing device of claim 8 , the conduit arranged as a helix extending around an entire circumference of the sidewall.

12. The semiconductor manufacturing device of claim 8 , further comprising a second conduit embedded in the sidewall, the second conduit disposed adjacent the conduit.

13. The semiconductor manufacturing device of claim 12 , wherein the second conduit has a circular cross-section.

14. The semiconductor manufacturing device of claim 12 , wherein the second conduit is arranged as a helix extending around an entire circumference of the sidewall.

15. An ion source, comprising:
a tubular component including a conduit embedded between an interior surface and an exterior surface of a sidewall, wherein the conduit includes a set of raised features formed on an inner surface of the conduit, the set of raised features extending into an interior area of the conduit, and wherein the conduit has a pentagonal cross-section defined by a bottom surface, a set of sidewalls, and a substantially triangular-shaped top portion; and
a base section coupled to the tubular component, the base section including an inlet and an outlet, wherein the conduit is fluidly connected with the inlet and the outlet, and wherein the inlet, the outlet, and the conduit operate to deliver a cooling fluid through the tubular component and the base section.

16. The ion source of claim 15 , the set of raised features extending from the set of sidewalls.

17. The ion source of claim 15 , the set of raised features including at least one of: a plurality of protrusions, and a plurality of ridges.

18. The ion source of claim 15 , the conduit arranged as a helix extending around an entire circumference of the sidewall.

19. The ion source of claim 15 , further comprising a second conduit embedded in the sidewall, the second conduit disposed adjacent the conduit.

20. The ion source of claim 19 , wherein the second conduit has a circular cross-section, and wherein the second conduit is arranged as a helix extending around an entire circumference of the sidewall.

Assignees

• Varian Semiconductor Equipment Ass Inc

Inventors

• Abeshaus Joshua M
• Tye Jordan B

Classifications

• H01J37/3171 Primary

  for ion implantation · CPC title

• B22F10/28

  Powder bed fusion, e.g. selective laser melting [SLM] or electron beam melting [EBM] · CPC title

• B33Y10/00

  Processes of additive manufacturing · CPC title

• H01J2237/2001

  Maintaining constant desired temperature · CPC title

• Y02P10/25

  Process efficiency · CPC title