Selective deposition of metals, metal oxides, and dielectrics

US11213853B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11213853-B2
Application numberUS-201916657307-A
CountryUS
Kind codeB2
Filing dateOct 18, 2019
Priority dateFeb 4, 2014
Publication dateJan 4, 2022
Grant dateJan 4, 2022

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material.

First claim

Opening claim text (preview).

We claim: 1. A method for selectively depositing a metal or metal oxide material on a first hydrophilic surface of a substrate relative to a second, different surface of the same substrate, the method comprising: at least one deposition cycle comprising alternately contacting the substrate with a precursor comprising a metal and a reactant, and wherein the second, different surface is treated to inhibit deposition of the metal or metal oxide material thereon prior to the at least one deposition cycle, and wherein the metal or metal oxide material is selectively deposited on the first hydrophilic surface relative to the second, different surface with a selectivity of at least 50%. 2. The method of claim 1 , wherein the metal or metal oxide material is selectively deposited on the first hydrophilic surface relative to the second, different surface with a selectivity of at least 90%. 3. The method of claim 1 , wherein the deposition cycle is an atomic layer deposition process. 4. The method of claim 1 , wherein the second, different surface is a conductive surface. 5. The method of claim 4 , wherein the second, different surface is no longer conductive after it is treated. 6. The method of claim 1 , wherein the second, different surface comprises a noble metal. 7. The method of claim 1 , wherein the second, different surface comprises Cu, Ru, Al, Ni, or Co. 8. The method of claim 1 , wherein the second, different surface is treated by oxidation to provide a metal oxide surface. 9. The method of claim 1 , wherein the second, different surface comprises Si. 10. The method of claim 9 , wherein the second, different surface is treated to provide a SiH 3 terminated surface. 11. The method of claim 1 , wherein the second, different surface is treated by passivating the surface. 12. The method of claim 11 , wherein the second surface is passivated with alkyl-silyl groups. 13. The method of claim 1 , wherein the first hydrophilic surface comprises OH groups. 14. The method of claim 1 , wherein the first hydrophilic surface comprises SiO 2 , GeO 2 or a low-k surface. 15. The method of claim 1 , wherein the precursor comprises Ni, Fe or Co. 16. The method of claim 1 , wherein the metal or metal oxide is selected from Ni, Fe, Co, Ni oxide, Fe oxide and Co oxide. 17. The method of claim 1 , wherein a metal is selectively deposited on the first hydrophilic surface relative to the second, different surface. 18. The method of claim 17 , wherein the metal is subsequently oxidized to form a metal oxide. 19. The method of claim 1 , wherein the reactant comprises an oxygen source. 20. The method of claim 1 , wherein the reactant comprises hydrogen, forming gas or an alcohol.

Assignees

Inventors

Classifications

  • Metal oxides (C23C18/1212 takes precedence) · CPC title

  • Inorganic substrates other than metallic · CPC title

  • C23C16/02Primary

    Pretreatment of the material to be coated (C23C16/04 takes precedence) · CPC title

  • Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates · CPC title

  • Inorganic polymers, e.g. silanes, polysilazanes, polysiloxanes · CPC title

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Frequently asked questions

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What does patent US11213853B2 cover?
Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material.
Who is the assignee on this patent?
Asm Ip Holding Bv
What technology area does this patent fall under?
Primary CPC classification C23C16/02. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Jan 04 2022 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 12 related publications on this page (citations in our corpus or others sharing the same primary CPC).