Power module with capacitor configured for improved thermal management

Patent metadata

Field	Value
Publication number	US-11212947-B2
Application number	US-201716090747-A
Country	US
Kind code	B2
Filing date	Apr 5, 2017
Priority date	Apr 6, 2016
Publication date	Dec 28, 2021
Grant date	Dec 28, 2021

Abstract

A module having a power semiconductor device and a ceramic capacitor which is configured for cooling the power semiconductor device.

First claim

The invention claimed is:

1. Module, comprising
a power semiconductor device,
a ceramic capacitor which is configured for cooling the power semiconductor device, and
at least one further capacitor also configured to cool the power semiconductor device,
wherein the ceramic capacitor and the power semiconductor device are connected together by a layer at least comprising silver as a constituent, and
wherein the coefficients of thermal expansion of the ceramic capacitor, of the power semiconductor device and of the silver-comprising layer differ from each other by no more than 10 −5 K −1 , and
wherein the module further comprises a control unit configured to control a function of the power semiconductor device, wherein the power semiconductor device includes an upper side on which the ceramic capacitor is arranged, and wherein the power semiconductor device includes a lower side that is opposite the upper side, the control unit being arranged directly on the lower side.

2. Module according to claim 1 ,
wherein the ceramic capacitor comprises a lead-lanthanum-zirconate-titanate ceramic.

3. Module according to claim 1 ,
wherein the layer, via which the ceramic capacitor and the power semiconductor device are connected together, includes at least 99 wt. % silver.

4. Module according to claim 1 ,
wherein the layer, via which the ceramic capacitor and the power semiconductor device are connected together, has been produced in a sintering process.

5. Module according to claim 1 ,
wherein the ceramic capacitor forms a support to which the power semiconductor device is secured.

6. Module according to claim 1 ,
wherein the ceramic capacitor comprises a ceramic material which has a dielectric constant of more than 2000 in an electrical field with a field strength between 5 kV/mm and 10 kV/mm and which is compatible with temperatures of at least 150° C.

7. Module according to claim 1 ,
wherein the ceramic capacitor comprises a ceramic material having a formulation
Pb (1-1,5a+e) A a B b (Zr 1-x Ti x ) 1-c C e Si c O 3 +y .PbO

wherein
A is selected from the group consisting of La, Nd, Y, Eu, Gd, Tb, Dy, Ho, Er and Yb;
C is selected from the group consisting of Ni and Cu; and
0<a<0.12
0.05≤x≤0.3
0≤c<0.12
0.001<e<0.12
0≤y<1.

8. Module according to claim 7 ,
wherein the ceramic capacitor is a ceramic multi-layer device and comprises inner electrodes.

9. Module according to claim 8 ,
wherein the inner electrodes have a thermal conductivity of more than 100 W/mK.

10. Module according to claim 8 ,
wherein the inner electrodes comprise copper.

11. Module according to claim 7 ,
comprising at least one further power semiconductor component, wherein the ceramic capacitor is configured for cooling the at least one further power semiconductor component.

12. Module according to claim 7 ,
wherein the module further comprises a control unit which is configured for controlling a function of the power semiconductor device.

13. Module according to claim 12 ,
wherein the power semiconductor device comprises an upper side on which the ceramic capacitor is arranged, and
wherein the power semiconductor device comprises a lower side which is opposite the upper side and on which the control unit is arranged.

14. Module according to claim 7 ,
wherein the power semiconductor device comprises a switch.

15. Module according to claim 7 ,
wherein the ceramic capacitor is interconnected with the power semiconductor device such that the ceramic capacitor acts as an intermediate circuit capacitor or as a damping capacitor.

16. Module, comprising
a power semiconductor device,
a ceramic capacitor which is configured for cooling the power semiconductor device, and
at least one further capacitor configured to cool the power semiconductor device,
wherein the ceramic capacitor comprises a lead-lanthanum-zirconate-titanate ceramic, and
wherein the ceramic capacitor and the power semiconductor device are connected together by a layer at least comprising silver as a constituent, wherein the coefficients of thermal expansion of the ceramic capacitor, of the power semiconductor and of the silver-comprising layer differ from each other by no more than 10 −5 K −1 , wherein the module further comprises a control unit configured to control a function of the power semiconductor device, wherein the power semiconductor device includes an upper side on which the ceramic capacitor is arranged, and wherein the power semiconductor device includes a lower side that is opposite the upper side, the control unit being arranged directly on the lower side.

17. Module according to claim 16 ,
wherein the ceramic capacitor and the power semiconductor device are connected together by a layer at least comprising silver as a constituent.

18. Module according to claim 17 ,
wherein the layer, via which the ceramic capacitor and the power semiconductor device are connected together, includes at least 99 wt. % silver.

19. Module according to claim 16 ,
wherein the ceramic capacitor forms a support to which the power semiconductor device is secured.

20. Module according to claim 16 ,
wherein the ceramic capacitor comprises a ceramic material having a formulation
Pb (1-1,5a+e) A a B b (Zr 1-x Ti x ) 1-c C e Si c O 3 +y .PbO

wherein
A is selected from the group consisting of La, Nd, Y, Eu, Gd, Tb, Dy, Ho, Er and Yb;
C is selected from the group consisting of Ni and Cu; and
0<a<0.12
0.05≤x≤0.3
0≤c<0.12
0.001<e<0.12
0≤y<1.

21. Module according to claim 16 ,
wherein the ceramic capacitor is a ceramic multi-layer device and comprises inner electrodes.

22. Module according to claim 16 ,
wherein the ceramic capacitor comprises inner electrodes, and wherein the inner electrodes have a thermal conductivity of more than 100 W/mK.

23. Module according to claim 16 ,
wherein the ceramic capacitor comprises inner electrodes, and wherein the inner electrodes comprise copper.

24. Module according to claim 17 ,
wherein the layer, via which the ceramic capacitor and the power semiconductor device are connected together, has been produced in a sintering process.

25. Module according to claim 16 ,
wherein the ceramic capacitor comprises a ceramic material which has a dielectric constant of more than 2000 in an electrical field with a field strength between 5 kV/mm and 10 kV/mm and which is compatible with temperatures of at least 150° C.

26. Module according to claim 16 ,
comprising at least one further power semiconductor component, wherein the ceramic capacitor is configured for cooling the at least one further power semiconductor component.

27. Module according to claim 16 ,
wherein the module further comprises a control unit which is configured for controlling a function of the power semiconductor device.

28. Module according to claim 16 ,
wherein the power semiconductor device comprises an upper side on which the ceramic capacitor is arranged, and
wherein the power semiconductor device comprises a lower side which is opposite the upper side and on which the control unit is arranged.

29. Module according to claim 16 ,
wherein the power semiconductor device comprises a switch.

30. Module according to claim 16 ,
wherein the ceramic capacitor is interconnected with the power semiconductor

Assignees

• Epcos Ag

Inventors

• Koini Markus
• Konrad Jürgen
• Kügerl Georg

Classifications

• H10W90/738

  between a chip and a stacked discrete passive device · CPC title

• H10W72/07331

  Connecting techniques · CPC title

• H10W72/352

  comprising metals or metalloids, e.g. solders · CPC title

• H10W90/00

  Package configurations · CPC title

• H10W40/255

  having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates · CPC title