Method for fabricating micro light-emitting diode display

Patent metadata

Field	Value
Publication number	US-11211535-B2
Application number	US-201916727502-A
Country	US
Kind code	B2
Filing date	Dec 26, 2019
Priority date	Jun 6, 2019
Publication date	Dec 28, 2021
Grant date	Dec 28, 2021

Abstract

A method for fabricating a micro light-emitting diode display is provided. The method includes disposing a plurality of micro light-emitting diodes on a carrier; transferring the micro light-emitting diodes from the carrier to a display substrate and disposing the micro light-emitting diodes in a plurality of pixels of the display substrate; subjecting the micro light-emitting diodes to a pre-bonding process to electrically connect the micro light-emitting diodes to the display substrate; subjecting the micro light-emitting diodes pre-bonded to the display substrate to a first detection process, thereby identifying whether a faulty micro light-emitting diode is present or not; and, subjecting the micro light-emitting diodes to the main bonding process after the first detection process.

First claim

What is claimed is:

1. A method for fabricating a micro light-emitting diode display, comprising:
disposing a plurality of micro light-emitting diodes on a carrier;
transferring the micro light-emitting diodes from the carrier to a display substrate and disposing the micro light-emitting diodes in a plurality of pixels of the display substrate;
subjecting the micro light-emitting diodes to a pre-bonding process to electrically connect the micro light-emitting diodes to the display substrate;
subjecting the micro light-emitting diodes pre-bonded to the display substrate to a first detection process, thereby identifying whether a faulty micro light-emitting diode is present or not; and
subjecting the micro light-emitting diodes to a main bonding process after the first detection process,
wherein the first detection process is an electrical detection, and the pixel having the faulty micro light-emitting diode is repaired after the faulty micro light-emitting diode is identified,
wherein the micro light-emitting diodes subjected to the main bonding process comprise both identified good micro light-emitting diodes and the repaired micro light-emitting diode.

2. The method as claimed in claim 1 , further comprising:
subjecting the micro light-emitting diodes on the carrier to a second detection process and identifying good micro light-emitting diodes of the micro light-emitting diodes on the carrier; and
transferring the good micro light-emitting diodes to the display substrate and subjecting the good micro light-emitting diodes to a pre-bonding process.

3. The method as claimed in claim 2 , wherein the second detection process is an optical detection.

4. The method as claimed in claim 1 , wherein the step of repairing the pixel having the faulty micro light-emitting diode comprises:
replacing the faulty micro light-emitting diode with a known good micro light-emitting diode.

5. The method as claimed in claim 1 , wherein the step of repairing the pixel having the faulty micro light-emitting diode comprises:
disconnecting an electrical connection between the faulty micro light-emitting diode and a control circuit of the display substrate; and
electrically connecting a redundant micro light-emitting diode to the control circuit of the display substrate.

6. The method as claimed in claim 1 , wherein there is a first bonding strength between the micro light-emitting diode and the display substrate after subjecting the micro light-emitting diode to a pre-bonding process, and there is a second bonding strength between the micro light-emitting diode and the display substrate after subjecting the micro light-emitting diode to the main bonding process, wherein the second bonding strength is greater than the first bonding strength.

7. The method as claimed in claim 1 , wherein the bonding temperature of the pre-bonding process is lower than the bonding temperature of the main bonding process.

8. The method as claimed in claim 7 , wherein the difference between the bonding temperature of the pre-bonding process and the bonding temperature of the main bonding process is greater than or equal to 100° C.

9. The method as claimed in claim 1 , wherein the process pressure of the pre-bonding process is lower than the process pressure of the main bonding process.

10. The method as claimed in claim 9 , wherein the difference between the process pressure of the pre-bonding process and the process pressure of the main bonding process is greater than or equal to 20 kgf/cm 2 .

11. The method as claimed in claim 1 , wherein the process period of the pre-bonding process is lower than the process period of the main bonding process.

Assignees

• Playnitride Display Co Ltd

Inventors

• Chen Yi-Ching
• Chen Pei-Hsin
• Shih Yi-Chun
• Lin Tzu-Yang
• Lai Yu-Hung

Classifications

• H10P72/7434

  used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate · CPC title

• H10P74/232

  comprising connection or disconnection of parts of a device in response to a measurement · CPC title

• H10P72/74

  using temporarily an auxiliary support · CPC title

• H10W90/00

  Package configurations · CPC title

• H10P74/23

  characterised by multiple measurements, corrections, marking or sorting processes · CPC title