Manufacturing method for solar cell, multi-junction solar cell, solar cell module, and photovoltaic power generation system
US-2024194818-A1 · Jun 13, 2024 · US
US11211510B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11211510-B2 |
| Application number | US-30152905-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 13, 2005 |
| Priority date | Dec 13, 2005 |
| Publication date | Dec 28, 2021 |
| Grant date | Dec 28, 2021 |
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Methods and apparatuses for creating solar cell assemblies with bonded interlayers are disclosed. In summary, the present invention describes an apparatus and method for making a solar cell assembly with transparent conductive bonding interlayers. An apparatus in accordance with the present invention comprises a substrate, a first solar cell, coupled to a first side of the substrate, wherein the first solar cell comprises a first Transparent Conductive Coating (TCC) layer coupled to a first polarity electrode of the first solar cell, and a second solar cell, the second solar cell being bonded to the first solar cell by bonding the first TCC layer to the second solar cell.
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What is claimed is: 1. A solar cell assembly, comprising: a first solar cell comprised of a first p-type doped semiconductor layer and a first n-type doped semiconductor layer forming a first p-n junction, a second solar cell comprised of a second p-type doped semiconductor layer and a second n-type doped semiconductor layer forming a second p-n junction, and a first Transparent Conductive Coating (TCC) layer, deposited on or above the first n-type doped semiconductor layer of the first solar cell and bonded to the second p-type doped semiconductor layer of the second solar cell, or deposited on or above the first p-type doped semiconductor layer of the first solar cell and bonded to the second n-type doped semiconductor layer of the second solar cell, for electrically connecting the first solar cell to the second solar cell, wherein: the first TCC layer is a Transparent Conductive Oxide (TCO) that is amorphous to allow for a mismatch in lattice constants between the first and second solar cells; the first TCC layer creates an interference effect that alters light travelling between the first solar cell and the second solar cell and increases efficiency of light absorbed in at least one of the first solar cell and the second solar cell; and the interference effect of the first TCC layer increases transmission of the light to the first solar cell and increases reflectance of the light back into the second solar cell. 2. The solar cell assembly of claim 1 , further comprising a second TCC layer, deposited on or above the second p-type doped semiconductor layer of the second solar cell, or deposited on or above the second n-type doped semiconductor layer of the second solar cell, wherein the first solar cell is bonded to the second solar cell by bonding the first TCC layer to the second TCC layer. 3. The solar cell assembly of claim 2 , further comprising a third solar cell comprised of a third p-type doped semiconductor layer and a third n-type doped semiconductor layer forming a third p-n junction, having a third TCC layer, deposited on or above the second n-type doped semiconductor layer of the second solar cell and bonded to the third p-type doped semiconductor layer of the third solar cell, or deposited on or above the second p-type doped semiconductor layer of the second solar cell and bonded to the third n-type doped semiconductor layer of the third solar cell, for electrically connecting the second solar cell to the third solar cell. 4. The solar cell assembly of claim 3 , further comprising a dielectric stack, coupled to at least one of the first, second or third TCC layers. 5. The solar cell assembly of claim 4 , wherein a material for the first TCC layer is selected from a group comprising zinc oxide, indium zinc oxide, indium tin oxide, indium molybdenum oxide, and indium titanium oxide. 6. The solar cell assembly of claim 5 , wherein a material for the second TCC layer is selected from a group comprising zinc oxide, indium zinc oxide, indium tin oxide, indium molybdenum oxide, and indium titanium oxide. 7. The solar cell assembly of claim 6 , wherein an optical stack is used between the first solar cell and the second solar cell to reflect a range of wavelengths of light back through the second solar cell. 8. The solar cell assembly of claim 7 , wherein one or more layers made of a transparent conduction material is incorporated into the optical stack, with at least one of a thickness, a position in the optical stack, composition, and an index of refraction of the one or more layers are designed to optimize reflection of a range of wavelengths back through the second solar cell. 9. The solar cell assembly of claim 6 , wherein an optical stack is used between the first solar cell and the second solar cell to maximize light transmission for a range of wavelengths between the second solar cell and the first solar cell. 10. The solar cell assembly of claim 1 , wherein the first solar cell is a multijunction solar cell. 11. A method for making a solar cell assembly, comprising: forming a first solar cell comprised of a first p-type doped semiconductor layer and a first n-type doped semiconductor layer forming a first p-n junction; forming a second solar cell comprised of a second p-type doped semiconductor layer and a second n-type doped semiconductor layer forming a second p-n junction; and bonding the first solar cell to the second solar cell using a first Transparent Conductive Coating (TCC) layer, deposited on or above the first n-type doped semiconductor layer of the first solar cell and bonded to the second p-type doped semiconductor layer of the second solar cell, or deposited on or above the first p-type doped semiconductor layer of the first solar cell and bonded to the second n-type doped semiconductor layer of the second solar cell, for electrically connecting the first solar cell to the second solar cell, wherein the first TCC layer is a Transparent Conductive Oxide (TCO) that is amorphous to allow for a mismatch in lattice constants between the first and second solar cells, the first TCC layer creates an interference effect that alters light travelling between the first solar cell and the second solar cell and increases efficiency of light absorbed in at least one of the first solar cell and the second solar cell, and the interference effect of the first TCC layer increases transmission of the light to the first solar cell and increases reflectance of the light back into the second solar cell. 12. The method of claim 11 , further comprising a second TCC layer, deposited on or above the second p-type doped semiconductor layer of the second solar cell, or deposited on or above the second n-type doped semiconductor layer of the second solar cell, wherein the first solar cell is bonded to the second solar cell by bonding the first TCC layer to the second TCC layer. 13. The method of claim 12 , further comprising: forming a third solar cell comprised of a third p-type doped semiconductor layer and a third n-type doped semiconductor layer forming a third p-n junction, having a third TCC layer, deposited on or above the third p-type doped semiconductor layer of the third solar cell or deposited on or above the third n-type doped semiconductor layer of the third solar cell; forming a fourth TCC layer, deposited on or above the second n-type doped semiconductor layer of the second solar cell or deposited on or above the second p-type doped semiconductor layer of the second solar cell; and bonding the third solar cell to the second solar cell by bonding the third TCC layer to the fourth TCC layer. 14. The method of claim 13 , further comprising a dielectric stack, coupled to at least one of the first, second or third TCC layers. 15. The method of claim 14 , wherein the first TCC layer is selected from a group comprising zinc oxide, indium zinc oxide, indium tin oxide, indium molybdenum oxide, and indium titanium oxide. 16. The method of claim 15 , wherein the second TCC layer is selected from a group comprising zinc oxide, indium zinc oxide, indium tin oxide, indium molybdenum oxide, and indium titanium oxide. 17. The method of claim 11 , wherein an optical stack is used between the first solar cell and the second solar cell to reflect a range of wavelengths of light back through the second solar cell. 18. The method of claim 17 , wherein one or more layers made of a transparent conduction material is incorporated into the optical stack, with one or more of a thickness, a position in the stack, a composition, and an index of refraction of the one or
made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers · CPC title
Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes · CPC title
comprising multiple PIN junctions, e.g. tandem cells · CPC title
comprising multiple PN homojunctions, e.g. tandem cells · CPC title
comprising multiple PN heterojunctions, e.g. tandem cells · CPC title
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