Metamorphic layers in multijunction solar cells

Patent metadata

Field	Value
Publication number	US-11211509-B2
Application number	US-201916688745-A
Country	US
Kind code	B2
Filing date	Nov 19, 2019
Priority date	Jun 2, 2006
Publication date	Dec 28, 2021
Grant date	Dec 28, 2021

Abstract

A multijunction solar cell includes an InGaAs buffer layer and an InGaAlAs grading interlayer disposed below, and adjacent to, the InGaAs buffer layer. The grading interlayer achieves a transition in lattice constant from one solar subcell to another solar subcell.

First claim

The invention claimed is:

1. A multijunction solar cell comprising:
a first solar subcell having a first band gap;
a second solar subcell disposed below the first solar subcell and having a second band gap smaller than the first band gap;
as InGaAlAs grading interlayer disposed below the second solar subcell, wherein the InGaAlAs grading interlayer includes a compositionally step-graded InGaAlAs series of layers, and wherein the InGaAlAs grading interlayer has a constant third band gap throughout its thickness greater than the second band gap; and
a third solar subcell disposed below the InGaAlAs interlayer that is lattice mismatched with respect to the second solar subcell and having a fourth band gap smaller than the third band gap,
wherein the InGaAlAs grading interlayer achieves a transition in lattice constant from the second subcell to the third subcell,
the multijunction solar cell further including an InGaAs buffer layer disposed below the second solar subcell and above the InGaAlAs grading interlayer.

2. A multijunction solar cell as defined in claim 1 , wherein the constant band gap of the InGaAlAs grading interlayer is 1.5 eV.

3. A multijunction solar cell as defined in claim 1 , wherein the InGaAlAs grading interlayer is disposed adjacent to the InGaAs buffer layer.

4. A multijunction solar cell as defined in claim 3 , further including a tunnel diode disposed below the second solar subcell and over the InGaAs buffer layer, wherein the tunnel diode is a circuit element to connect the second and third solar subcells.

5. A multijunction solar cell as defined in claim 1 , wherein the InGaAlAs grading interlayer includes a compositionally step-graded InGaAlAs series of layers with monotonically changing lattice constant.

6. A multijunction solar cell as defined in claim 1 , wherein one or more of the solar subcells includes an InGa(Al)P layer or an InGaP layer.

7. A multijunction solar cell assembly comprising:
a cover glass;
a multijunction solar cell below the cover glass, the multijunction solar cell including:
one or more grid lines;
a first contact layer below the first contact layer;
a window layer below the first contact layer;
a first solar subcell disposed below the window layer and having a first band gap;
a second solar subcell disposed below the first solar subcell and having a second band gap smaller than the first band gap;
an InGaAlAs grading interlayer disposed below the second solar subcell, wherein the InGaAlAs grading interlayer includes a compositionally step-graded InGaAlAs series of layers, and wherein the InGaAlAs grading interlayer has a constant third band gap throughout its thickness greater than the second band gap;
a third solar subcell disposed below the InGaAlAs interlayer that is lattice mismatched with respect to the second solar subcell and having a fourth band gap smaller than the third band gap, wherein the InGaAlAs grading interlayer achieves a transition in lattice constant from the second subcell to the third subcell; and
a second contact layer below the third solar subcell and making electrical contact therewith,
the multijunction solar cell further including an InGaAs buffer layer disposed below the second solar subcell and above the InGaAlAs grading interlayer, wherein the InGaAlAs grading interlayer is disposed adjacent to the InGaAs buffer layer.

8. A multijunction solar cell assembly as defined in claim 7 , including an antireflective coating over the one or more grid lines.

9. A multijunction solar cell assembly as defined in claim 7 , wherein the InGaAs buffer layer has a thickness on the order of 1 μm.

10. A multijunction solar cell assembly as defined in claim 7 , wherein the constant band gap of the InGaAlAs grading interlayer is 1.5 eV.

11. A multijunction solar cell assembly as defined in claim 7 , wherein the InGaAlAs grading interlayer includes a compositionally step-graded InGaAlAs series of layers with monotonically changing lattice constant.

Assignees

• Solaero Tech Corp

Inventors

• Cornfeld Arthur
• Stan Mark A

Classifications

• Y02E10/544

  Solar cells from Group III-V materials · CPC title

• H10F77/1248 Primary

  having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP · CPC title

• H10F71/1272

  comprising at least three elements, e.g. GaAlAs or InGaAsP · CPC title

• H10F71/127

  The active layers comprising only Group III-V materials, e.g. GaAs or InP · CPC title

• H10F10/1425

  Inverted metamorphic multi-junction [IMM] photovoltaic cells · CPC title