Solid-state imaging device to improve photoelectric efficiency

Patent metadata

Field	Value
Publication number	US-11211409-B2
Application number	US-202016807958-A
Country	US
Kind code	B2
Filing date	Mar 3, 2020
Priority date	Sep 16, 2015
Publication date	Dec 28, 2021
Grant date	Dec 28, 2021

Abstract

A solid-state imaging device includes a first electrode, a second electrode, and a photoelectric conversion film that is formed between the first electrode and the second electrode and includes an organic semiconductor and an inorganic material.

First claim

The invention claimed is:

1. A method of manufacturing a solid-state imaging device, comprising:
forming a first electrode;
forming, on the first electrode, a photoelectric conversion film by co-deposition of an organic semiconductor and an inorganic material, wherein
a volume ratio of the inorganic material in the photoelectric conversion film is at least 70%,
the co-deposition of the organic semiconductor and the inorganic material is by using a first deposition source for the organic semiconductor and a second deposition source for the inorganic material, and
the first deposition source is separated from the second deposition source by a partition wall; and

forming a second electrode on the photoelectric conversion film.

2. The method of manufacturing the solid-state imaging device according to claim 1 , wherein
the inorganic material comprises zinc sulfide (ZnS), and
the forming of the photoelectric conversion film comprises performing the co-deposition by using a resistive heating system for each of the organic semiconductor and the inorganic material.

3. The method of manufacturing the solid-state imaging device according to claim 1 , wherein
the inorganic material comprises titanium oxide (TiO 2 ), and
the forming of the photoelectric conversion film comprises performing the co-deposition by using a resistive heating system for the organic semiconductor and by using an electron beam heating system for the inorganic material.

4. The method of manufacturing the solid-state imaging device according to claim 1 , wherein the photoelectric conversion film is formed by alternately and repetitively depositing the organic semiconductor and the inorganic material.

5. The method of manufacturing the solid-state imaging device according to claim 1 , further comprising:
forming an insulating film on the first electrode; and
forming an opening in the insulating film such that a surface of the first electrode is exposed from the opening.

6. The method of manufacturing the solid-state imaging device according to claim 5 , further comprising forming a buffer layer on the first electrode, wherein the buffer layer covers the surface of the first electrode exposed from the opening.

Assignees

• Sony Semiconductor Solutions Corp

Inventors

• Nakayama Norikazu
• Ono Hideki
• Obana Yoshiaki
• Matsuzawa Nobuyuki

Classifications

• H10K19/20

  comprising components having an active region that includes an inorganic semiconductor · CPC title

• H10F39/1825 Primary

  Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures · CPC title

• H10F77/123

  comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe · CPC title

• H10F77/12

  Active materials · CPC title

• H10F39/192

  Colour image sensors · CPC title