Photodetector

Patent metadata

Field	Value
Publication number	US-2017301479-A1
Application number	US-201515509867-A
Country	US
Kind code	A1
Filing date	Aug 31, 2015
Priority date	Sep 10, 2014
Publication date	Oct 19, 2017
Grant date	—

Abstract

The present invention concerns a device for room temperature reverse-bias operation photo-detection. The device comprising:—a planar first electrode extending in a planar direction;—a second electrode positioned above the first electrode in a direction substantially perpendicular to said planar direction; and—an active region sandwiched between the first and second electrode. The active region consists of a light absorbing perovskite and wherein the light absorbing perovskite is in direct contact with at least one of the first and second electrodes.

First claim

1 - 88 . (canceled)

89 . A device for room temperature reverse-bias operation photo-detection, the device comprising:
a planar first electrode extending in a planar direction; a second electrode positioned above the first electrode in a direction substantially perpendicular to the planar direction; and an active region sandwiched between the first and second electrode; wherein the active region consists of: a light absorbing perovskite; or a light absorbing perovskite and a hole-transporting material; or a light absorbing perovskite and a surface increasing scaffold structure; or a light absorbing perovskite and a porous under-layer; or a light absorbing perovskite, a surface increasing scaffold structure and a porous under-layer; or a light absorbing perovskite, a hole-transporting material and a surface increasing scaffold structure; or a light absorbing perovskite, a hole-transporting material and a porous under-layer; or a light absorbing perovskite and an electron-transporting material layer; or a light absorbing perovskite, an electron-transporting material layer and a surface increasing scaffold structure; or a light absorbing perovskite, an electron-transporting material layer and a hole-transporting material; or a light absorbing perovskite, an electron-transporting material layer, a surface increasing scaffold structure and a hole-transporting material; or a light absorbing perovskite, a hole-transporting material, a surface increasing scaffold structure and a porous under-layer; and wherein the light absorbing perovskite is in direct contact with at least one of the first and second electrodes.

90 . The device according to claim 89 , wherein the porous under-layer includes a plurality of hole conducting channels or a network of hole conducting channels inside the under-layer, the plurality of hole conducting channels or the network of hole conducting channels being in electrical communication with the first electrode and the light absorbing perovskite to permit hole conduction via the plurality of hole conducting channels or the network of hole conducting channels.

91 . The device according to claim 89 , wherein the porous under-layer includes a plurality of pores, a plurality of hole conducting channels or a network of hole conducting channels being delimited by a plurality of the pores.

92 . The device according to claim 90 , wherein the plurality of hole conducting channels or the network of hole conducting channels includes the light absorbing perovskite or the light absorbing perovskite and light absorbing perovskite preparation elements, and the light absorbing perovskite directly physically contacts the first electrode, or a light absorbing perovskite preparation element directly physically contacts the first electrode to form a rectifying contact with the first electrode.

93 . The device according to claim 90 , wherein the plurality of hole conducting channels or the network of hole conducting channels includes the light absorbing perovskite or the light absorbing perovskite and light absorbing perovskite preparation elements and the light absorbing perovskite is located at least within a carrier tunneling distance of the anode electrode, or a light absorbing perovskite preparation element is located at least within a carrier tunneling distance of the anode electrode.

94 . The device according to claim 91 , wherein the plurality of hole conducting channels or the network of hole conducting channels are formed in a plurality of pores.

95 . The device according to claim 91 , wherein the plurality of pores are filled or partially filled by the light absorbing perovskite, or the light absorbing perovskite and light absorbing perovskite preparation elements.

96 . The device according to claim 89 , wherein the porous under-layer is a non-compact structure or layer.

97 . The device according to claim 89 , wherein the light absorbing perovskite is provided on the surface increasing scaffold structure and is infiltrated through the surface increasing scaffold structure.

98 . The device according to claim 89 , wherein the electron transport material layer is porous and infiltrated by the light absorbing perovskite.

99 . The device according to claim 89 , wherein the active region consists of:
a porous under-layer provided on the first electrode, a light absorbing perovskite provided on the under-layer, and a hole-transporting material provided between the second electrode and the light absorbing perovskite.

100 . The device according to claim 89 , wherein the active region consists of:
a porous under-layer provided on the first electrode, a surface increasing scaffold structure provided on the under-layer, and a light absorbing perovskite provided on the surface increasing scaffold structure and between the second electrode and the surface increasing scaffold structure.

101 . The device according to claim 89 , wherein the active region consists of:
a porous under-layer provided on the first electrode, and a light absorbing perovskite provided on the under-layer and between the second electrode and the porous under-layer.

102 . The device according to claim 89 , wherein the active region consists of:
a light absorbing perovskite provided on the first electrode, and a hole-transporting material provided between the second electrode and the light absorbing perovskite.

103 . The device according to claim 89 , wherein the active region consists of:
a light absorbing perovskite provided between the first and second electrodes.

104 . The device according to claim 89 , wherein the active region consists of:
a hole-transporting material provided on the second electrode, a light absorbing perovskite provided on the hole-transporting material and between the first electrode and the hole-transporting material.

105 . The device according to claim 89 , wherein the active region consists of:
a hole-transporting material provided on the second electrode, a surface increasing scaffold structure provided on the hole-transporting material, and a light absorbing perovskite provided on the surface increasing scaffold structure and between the first electrode and the surface increasing scaffold structure.

106 . The device according to claim 89 , wherein the active region consists of:
a hole-transporting material provided on the second electrode, a light absorbing perovskite provided on the hole-transporting material, and an electron transport material layer or porous under-layer provided on the light absorbing perovskite and between the first electrode and the light absorbing perovskite.

107 . The device according to claim 89 , wherein the active region consists of:
a hole-transporting material provided on the second electrode, a surface increasing scaffold structure provided on the hole-transporting material, a light absorbing perovskite provided on the surface increasing scaffold structure, and an electron transport material layer or porous under-layer provided on the light absorbing perovskite and between the first electrode and the light absorbing perovskite.

108 . The device according to claim 89 , wherein the active region consists of:
a surface increasing scaffold structure provided on the second electrode, a light absorbing perovskite provided on the surface increasing scaffold structure, and an electron transport material layer or porous under-layer provided on the light absorbing perovskite and between the f

Assignees

• Ecole Polytechnique Fed De Lausanne (Epfl)

Inventors

• Moehl Thomas
• Nazeeruddin Mohammad Khaja
• GRäTZEL MICHAEL
• Im Jeong-Hyeok
• Park Nam-Gyu
• Domanski Konrad

Classifications

• H01G9/209 Primary

  Light trapping arrangements · CPC title

• H01L51/442

  Electricity · mapped topic

• H01L51/006

  Electricity · mapped topic

• H01L51/0056

  Electricity · mapped topic

• H01L51/447

  Electricity · mapped topic