Heater structure configured to improve thermal efficiency in a modulator device

Patent metadata

Field	Value
Publication number	US-11209673-B2
Application number	US-202016733488-A
Country	US
Kind code	B2
Filing date	Jan 3, 2020
Priority date	Oct 30, 2019
Publication date	Dec 28, 2021
Grant date	Dec 28, 2021

Abstract

Various embodiments of the present disclosure are directed towards a modulator device including a first waveguide and a heater structure. An input terminal is configured to receive impingent light. The first waveguide has a first output region and a first input region coupled to the input terminal. A second waveguide is optically coupled to the first waveguide. The second waveguide has a second output region and a second input region coupled to the input terminal. An output terminal is configured to provide outgoing light that is modulated based on the impingent light. The output terminal is coupled to the first output region and the second output region. The heater structure overlies the first waveguide. A bottom surface of the heater structure is aligned with a bottom surface of the first waveguide. The first waveguide is spaced laterally between sidewalls of the heater structure.

First claim

What is claimed is:

1. A modulator device comprising:
an input terminal configured to receive impingent light;
a first waveguide having a first input region and a first output region, wherein the first input region is coupled to the input terminal;
a second waveguide optically coupled to the first waveguide, wherein the second waveguide has a second input region and a second output region, wherein the second input region is coupled to the input terminal;
an output terminal configured to provide outgoing light that is modulated based on the impingent light, wherein the output terminal is coupled to the first output region of the first waveguide and the second output region of the second waveguide; and
a heater structure overlying the first waveguide, wherein the first waveguide is spaced laterally between sidewalls of the heater structure, wherein the heater structure comprises an upper conductive body directly overlying the first waveguide and a heater pillar structure continuously extending from the upper conductive body to a point aligned with a bottom surface of the first waveguide, wherein the heater pillar structure comprises a lower pillar portion and an upper pillar portion, wherein a thermal conductivity of the upper conductive body is less than a thermal conductivity of the lower pillar portion, and wherein the heater structure is configured to transfer heat from the upper conductive body, through the upper pillar portion and the lower pillar portion, towards the first waveguide.

2. The modulator device of claim 1 , wherein the lower pillar portion of the heater pillar structure and the first waveguide comprise a same material.

3. The modulator device of claim 1 , wherein a maximum width of the upper conductive body is greater than a maximum width of the heater pillar structure.

4. The modulator device of claim 1 , wherein the upper conductive body comprises a first material and the heater pillar structure comprises a second material different than the first material.

5. The modulator device of claim 1 , wherein the upper conductive body is vertically offset from the first waveguide by a non-zero vertical distance, wherein the first waveguide is disposed laterally between inner sidewalls of the heater pillar structure, and wherein the heater pillar structure is laterally offset from the first waveguide by a non-zero lateral distance.

6. The modulator device of claim 1 , wherein the heater structure is U-shaped.

7. The modulator device of claim 1 , wherein the first waveguide comprises a first doped region and a second doped region that abuts the first doped region, wherein the first doped region comprises a first doping type and the second doped region comprises a second doping type opposite the first doping type.

8. The modulator device of claim 1 , wherein the upper pillar portion comprises a heater via over the lower pillar portion and a heater wire over the heater via.

9. A modulator device comprising:
a first waveguide arranged over a substrate and comprising an active region configured to modulate light;
a second waveguide arranged over the substrate and optically coupled to the first waveguide;
a first dielectric structure arranged over the first and second waveguides;
a heater structure embedded within the first dielectric structure and overlying the active region of the first waveguide, wherein the heater structure comprises:
an upper conductive body directly overlying the active region of the first waveguide, wherein the upper conductive body comprises a first metal material;
a heater pillar structure continuously extending from the upper conductive body to a point beneath an upper surface of the first waveguide, wherein the first waveguide is laterally between inner sidewalls of the heater pillar structure, wherein the first waveguide is laterally offset from the inner sidewalls of the heater pillar structure by a non-zero distance, wherein the heater pillar structure comprises a heater wire, a heater via underlying the heater wire, and a lower pillar structure underlying the heater via, wherein the heater wire comprises a second metal material different than the first metal material, wherein the heater wire is disposed vertically between the upper conductive body and the heater via; and
wherein the heater structure is configured to direct heat from the upper conductive body through the heater wire and the heater via in a direction towards the active region of the first waveguide.

10. The modulator device of claim 9 , wherein the lower pillar structure comprises a same material as the first waveguide.

11. The modulator device of claim 10 , wherein the heater wire has a first thermal conductivity and the lower pillar structure has a second thermal conductivity less than the first thermal conductivity.

12. The modulator device of claim 9 , wherein the first dielectric structure comprises a dielectric material with a thermal conductivity less than a thermal conductivity of the heater structure.

13. The modulator device of claim 9 , wherein the heater pillar structure comprises a first pillar segment and a second pillar segment, wherein the first and second pillar segments are disposed on opposite sides of the first waveguide such that the first waveguide is laterally spaced between the first and second pillar segments.

14. The modulator device of claim 13 , wherein the upper conductive body continuously laterally extends from the first pillar segment to the second pillar segment.

15. The modulator device of claim 9 , wherein a minimum distance between the heater pillar structure and the first waveguide is less than a minimum distance between the upper conductive body and the first waveguide.

16. The modulator device of claim 9 , wherein a conductive wire overlies the substrate and is laterally offset from the heater structure, wherein a top surface of the conductive wire is vertically aligned with a top surface of the heater wire.

17. The modulator device of claim 9 , wherein the upper conductive body has a first thermal conductivity, the heater wire has a second thermal conductivity greater than the first thermal conductivity, and the lower pillar structure has a third thermal conductivity greater than the first thermal conductivity.

18. A method for forming a modulator device, the method comprising:
forming a first waveguide over a substrate;
forming a lower pillar structure over the substrate, wherein the first waveguide is spaced laterally between inner sidewalls of the lower pillar structure;
depositing a dielectric structure over the first waveguide and the lower pillar structure;
forming an upper pillar structure over the lower pillar structure, wherein the upper pillar structure is embedded within the dielectric structure, wherein the upper pillar structure includes a heater via over the lower pillar structure and a heater wire over the heater via; and
forming an upper conductive body along an upper surface of the dielectric structure and an upper surface of the heater wire, thereby defining a heater structure, wherein the heater structure includes the lower pillar structure, the upper pillar structure, and the upper conductive body, wherein the upper conductive body directly overlies the first waveguide, wherein the heater wire is disposed vertically between the upper conductive body and the heater via, wherein the upper conductive body comprises a first metal material and the heater wire comprises a second metal material different than the first metal material, and wherein the heater structure is configured to direct heat fr

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Lin Shih-Wei
• Liu Ming Chyi

Classifications

• G02F1/011 Primary

  in optical waveguides, not otherwise provided for in this subclass · CPC title

• G02F1/0147 Primary

  based on thermo-optic effects (G02F1/132 takes precedence) · CPC title

• G02F1/2257

  the optical waveguides being made of semiconducting material · CPC title

• G02B6/287 Primary

  Structuring of light guides to shape optical elements with heat application (G02B6/255 takes precedence) · CPC title

• G02B6/13

  Integrated optical circuits characterised by the manufacturing method · CPC title