Quantum cascade laser and method for manufacturing same

Patent metadata

Field	Value
Publication number	US-11205887-B2
Application number	US-201916701217-A
Country	US
Kind code	B2
Filing date	Dec 3, 2019
Priority date	Dec 4, 2018
Publication date	Dec 21, 2021
Grant date	Dec 21, 2021

Abstract

A quantum cascade laser of an embodiment includes a semiconductor stacked body in which a ridge waveguide is provided. The semiconductor stacked body includes an active layer including a quantum well region including a layer including Al; and the active layer emits laser light. The layer that includes Al includes first regions, and a second region interposed between the first regions; the first region includes Al oxide and reaches a prescribed depth inward from an outer edge of the active layer along a direction parallel to a surface of the active layer in a cross section orthogonal to the optical axis; and the second region does not include Al oxide.

First claim

What is claimed is:

1. A quantum cascade laser, comprising a semiconductor stacked body including an active layer and having a ridge waveguide provided in the semiconductor stacked body,
the active layer including a quantum well region and emitting laser light by an intersubband optical transition of a mono-carrier, the quantum well region including a layer including Al,
an optical axis of the laser light being parallel to an extension direction of the ridge waveguide,
the layer including Al including first regions and a second region, the first regions including Al oxide and reaching a prescribed depth along a direction inward from an outer edge of the active layer, the direction being parallel to a surface of the active layer in a cross section orthogonal to the optical axis, the second region being interposed between the first regions and not including Al oxide;
further comprising a substrate,
the semiconductor stacked body being provided on the substrate,
wherein in the cross section, outer edges of the active layer are parallel or cause the active layer to widen toward the substrate.

2. The laser according to claim 1 , wherein the first regions are a current confinement layer.

3. The laser according to claim 2 , further comprising a substrate, the semiconductor stacked body being provided on the substrate.

4. The laser according to claim 1 , wherein the substrate includes InP.

5. The laser according to claim 1 , wherein the quantum well region includes in the second region a well layer including InGaAs, and a barrier layer including AlInAs.

6. The laser according to claim 1 , wherein an Al mole ratio of the second region of the quantum well region is a maximum among Al mole ratios of a plurality of layers included in the semiconductor stacked body.

Assignees

• Toshiba Kk

Inventors

• Hashimoto Rei
• Saito Shinji
• Takase Tomohiro
• Kakuno Tsutomu
• Yamamoto Yuichiro
• Kaneko Kei

Classifications

• B82Y20/00

  Nanooptics, e.g. quantum optics or photonic crystals · CPC title

• H01S5/3402

  intersubband lasers, e.g. transitions within the conduction or valence bands · CPC title

• H01S5/343 Primary

  in AIIIBV compounds, e.g. AlGaAs-laser {, InP-based laser} · CPC title

• H01S5/34346

  characterised by the materials of the barrier layers · CPC title

• H01S5/3407

  characterised by special barrier layers · CPC title