Graphene barrier layer

Patent metadata

Field	Value
Publication number	US-11205618-B2
Application number	US-201916571279-A
Country	US
Kind code	B2
Filing date	Sep 16, 2019
Priority date	Sep 16, 2019
Publication date	Dec 21, 2021
Grant date	Dec 21, 2021

Abstract

Interconnect structures and method of forming the same are disclosed herein. An exemplary interconnect structure includes a first contact feature in a first dielectric layer, a second dielectric layer over the first dielectric layer, a third dielectric layer over the second dielectric layer, a second contact feature extending through the second dielectric layer and the third dielectric layer, and a graphene layer between the second contact feature and the third dielectric layer.

First claim

What is claimed is:

1. An interconnect structure comprising:
a first contact feature in a first dielectric layer;
a second dielectric layer over the first dielectric layer;
a third dielectric layer over the second dielectric layer;
a second contact feature extending through the second dielectric layer and the third dielectric layer; and
a graphene layer between the second contact feature and the third dielectric layer,
wherein the second contact feature is formed of a seed metal that includes a catalytic surface for graphene formation.

2. The interconnect structure of claim 1 ,
wherein the second contact feature comprises a contact via portion and a metal line portion,
wherein the contact via portion of the second contact feature is disposed within the second dielectric layer,
wherein the metal line portion of the second contact feature is disposed within the third dielectric layer.

3. The interconnect structure of claim 1 , wherein the second contact feature comprises nickel, cobalt, iron, copper, or cupronickel.

4. The interconnect structure of claim 1 , further comprising carbon atoms disposed in grain boundaries of the second contact feature.

5. The interconnect structure of claim 1 , wherein an interface between the second dielectric layer and the third dielectric layer is free of the graphene layer.

6. The interconnect structure of claim 1 , further comprising an etch stop layer disposed between the first dielectric layer and the second dielectric layer,
wherein the graphene layer is disposed between the second contact feature and the etch stop layer.

7. The interconnect structure of claim 1 , wherein the graphene layer comprises a thickness between 3 Å and 20 Å.

8. An interconnect structure comprising:
a first contact feature in a first dielectric layer;
an etch stop layer over the first dielectric layer;
a second dielectric layer over the etch stop layer;
a second contact feature extending through the second dielectric layer and electrically coupled to the first contact feature; and
a carbon layer between and in contact with the second contact feature and the first contact feature, wherein the carbon layer extends continuously along an interface between the second contact feature and the first contact feature.

9. The interconnect structure of claim 8 , wherein the carbon layer comprises a graphene layer.

10. The interconnect structure of claim 8 , wherein the second contact feature is free of carbon atoms.

11. The interconnect structure of claim 8 ,
wherein the carbon layer comprises a first portion disposed between the second contact feature and the second dielectric layer and a second portion disposed between the second contact feature and the first contact feature,
wherein the first portion comprises a first thickness and the second portion comprises a second thickness smaller than the first thickness.

12. The interconnect structure of claim 8 , wherein a dielectric constant of the etch stop layer is greater than dielectric constants of the first and second dielectric layers.

13. The interconnect structure of claim 8 , wherein the second contact feature comprises nickel, cobalt, iron, copper, or cupronickel.

14. An interconnect structure comprising:
a first contact feature in a first dielectric layer;
an etch stop layer over the first dielectric layer;
a second dielectric layer directly on the etch stop layer;
a third dielectric layer directly on the second dielectric layer;
a second contact feature extending through the third dielectric layer, the second dielectric layer, and the etch stop layer and electrically coupled to the first contact feature; and
a carbon layer between and in contact with the second contact feature and the third dielectric layer,
wherein the carbon layer extends along an interface between the first contact feature and the second contact feature.

15. The interconnect structure of claim 14 , wherein the carbon layer comprises a graphene layer.

16. The interconnect structure of claim 14 , wherein the carbon layer is further disposed between and in contact with the second contact feature and the second dielectric layer.

17. The interconnect structure of claim 14 , wherein the carbon layer is further disposed between and in contact with the second contact feature and the etch stop layer.

18. The interconnect structure of claim 14 , wherein the second contact feature is spaced apart from the second dielectric layer by the carbon layer.

19. The interconnect structure of claim 14 , wherein a portion of the third dielectric layer is disposed over the second contact feature.

20. The interconnect structure of claim 14 ,
wherein the second contact feature comprises a via portion disposed in the second dielectric layer and a metal line portion disposed in the third dielectric layer,
wherein the metal line portion comprises a tapered profile such that a bottom width of the metal line portion is greater than a top width of the metal line portion.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Yang Shin-Yi
• Lee Ming-Han
• Shue Shau-Lin

Classifications

• H10W20/4437

  the principal metal being a transition metal · CPC title

• H10P95/90

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10W20/045

  for deposition from the gaseous phase, e.g. for chemical vapour deposition [CVD] · CPC title

• H10W20/42

  Vias, e.g. via plugs · CPC title

• H10W20/425 Primary

  Barrier, adhesion or liner layers · CPC title