Oxide interface displaying electronically controllable ferromagnetism

Patent metadata

Field	Value
Publication number	US-11205535-B2
Application number	US-201916661908-A
Country	US
Kind code	B2
Filing date	Oct 23, 2019
Priority date	Jul 17, 2014
Publication date	Dec 21, 2021
Grant date	Dec 21, 2021

Abstract

A structure includes an electronically controllable ferromagnetic oxide structure that includes at least three layers. The first layer comprises STO. The second layer has a thickness of at least about 3 unit cells, said thickness being in a direction substantially perpendicular to the interface between the first and second layers. The third layer is in contact with either the first layer or the second layer or both, and is capable of altering the charge carrier density at the interface between the first layer and the second layer. The interface between the first and second layers is capable of exhibiting electronically controlled ferromagnetism.

First claim

What is claimed is:

1. An electronically controllable ferromagnetic oxide structure comprising:
(a) a first layer comprising SrTiO 3 ;
(b) a second layer in contact with the first layer, wherein the second layer has a thickness of at least about 4 unit cells, the thickness being in a direction substantially perpendicular to an interface between the first and the second layers, wherein the interface is defined by a plane between the first and second layers; and
(c) at least one surface electrode and at least one interfacial contact, the at least one surface electrode and the at least one interfacial contact being in contact with at least one of the first layer or the second layer, wherein the at least one surface electrode and the at least one interfacial contact are configured to alter the charge carrier density at the interface between the first and second layers,
wherein the at least one surface electrode is deposited on the second layer on a surface spaced from the interface, and the at least one interfacial contact extends from the surface spaced from the interface through the second layer to the interface, and
wherein the interface between the first and the second layers is configured to (i) exhibit electronically controlled ferromagnetism in response to alteration of the charge carrier density, and (ii) switch between a ferromagnetic state and a non-ferromagnetic state.

2. The structure of claim 1 , wherein the second layer comprises at least one of LaAlO 3 , LaTiO 3 , EuTiO 3 , Al 2 O 3 , GaTiO 3 , or LaMnO 3 .

3. The structure of claim 1 , wherein the interface comprises a TiO 2 -terminated [001] SrTiO 3 surface.

4. The structure of claim 1 , wherein the at least one surface electrode comprises at least one of Ti or Au.

5. A cross-bar array comprising:
(a) a plurality of oxide structures of claim 1 ;
(b) a plurality of bit lines that are substantially parallel to one another and are substantially disposed in a first plane; and
(c) a plurality of word lines that are substantially parallel to one another and are substantially disposed in a second plane,
wherein:
the first plane is substantially parallel to the second plane;
(ii) each bit line is substantially perpendicular to each word line;
(iii) the at least one surface electrode of each oxide structure comprises at least a portion of at least one bit line, and
(iv) at least one of the layers of each oxide structure is in contact with at least one word line.

6. The cross-bar array of claim 5 , wherein:
(a) at least one bit line comprises a layer of a first material and a layer of a second material that is different from the first material;
(b) the at least one surface electrode of the at least one oxide structure comprises at least a portion of the at least one bit line.

7. The structure of claim 1 , wherein the at least one interfacial contact is an arcuate contact disposed so as to be arranged concentrically around at least a portion of the at least one surface electrode.

8. The structure of claim 1 , wherein the at least one surface electrode comprises a plurality of metallic circular top electrodes disposed in series.

9. The structure of claim 1 , wherein the at least one surface electrode is grounded.

10. A method of altering a ferromagnetic state at an interface of a multi-layered oxide structure comprising at least a first layer and a second layer, the method comprising:
establishing a voltage difference between the interface and a material in contact with at least one of the layers of the multi-layered oxide structure, the interface being between the first and second layers of the oxide structure and defined by a plane between the first and second layers, wherein:
(a) the voltage difference is sufficient to alter a charge carrier density at the interface between the first and second layers of the oxide structure;
(b) the first layer comprises SrTiO 3 ;
(c) the second layer has a thickness of at least about 4 unit cells, the thickness being in a direction substantially perpendicular to the interface between the first and second layers;
(d) the oxide structure further comprises at least one surface electrode and at least one interfacial contact, the at least one surface electrode and the at least one interfacial contact being in contact with at least one of the first layer or the second layer, and
(e) the interface between the first and second layers of the oxide structure is capable of exhibiting electronically controlled ferromagnetism,
wherein the at least one surface electrode is deposited on the second layer on a surface spaced from the interface, and the at least one interfacial contact extends from the surface spaced from the interface through the second layer to the interface.

11. The method of claim 10 , wherein:
(a) the voltage difference is about 0.01 to about 15 volts; and
(b) the voltage applied to the material in contact with the at least one layer is greater than the voltage applied to the interface.

12. The method of claim 11 , wherein the at least one surface electrode comprises at least one of Ti or Au.

13. The method of claim 10 , wherein the interface comprises a TiO 2 -terminated [001] SrTiO 3 surface.

14. The method of claim 10 , wherein the second layer comprises at least one of LaAlO 3 , LaTiO 3 , EuTiO 3 , Al 2 O 3 , GaTiO 3 , or LaMnO 3 .

15. The method of claim 10 , wherein the at least one interfacial contact is an arcuate contact disposed so as to be arranged concentrically around at least a portion of the at least one surface electrode.

16. The method of claim 10 , further comprising grounding the at least one surface electrode.

17. The method of claim 10 , wherein establishing the voltage difference comprises:
(a) grounding the at least one surface electrode, and
(b) applying a voltage to the at least one interfacial contact so as to increase electron accumulation at the interface.

Assignees

• Univ Of Pittsburgh—Of The Commonwealth System Of Higher Education

Inventors

• Levy Jeremy
• Bi Feng
• Irvin Patrick R

Classifications

• G11C11/161 Primary

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• G11C11/1675

  Writing or programming circuits or methods · CPC title

• H01F10/06

  characterised by the coupling or physical contact with connecting or interacting conductors · CPC title

• G11C11/155

  with cylindrical configuration · CPC title

• H01F1/40

  of magnetic semiconductor materials, e.g. CdCr2S4 (devices using galvano-magnetic or similar effects H10N50/00) · CPC title