Dielectric film and electronic component
US-2017275174-A1 · Sep 28, 2017 · US
US11201013B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11201013-B2 |
| Application number | US-202016830884-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 26, 2020 |
| Priority date | Mar 26, 2019 |
| Publication date | Dec 14, 2021 |
| Grant date | Dec 14, 2021 |
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A dielectric film comprises a complex oxide represented by a general formula xAO-yBO-zC 2 O 5 as a main component, wherein A is at least one selected from barium, calcium and strontium, B is at least one selected from magnesium and zinc, C is at least one selected from niobium and tantalum, x, y and z satisfy relations: x+y+z=1.000, 0.375≤x≤0.563, 0.250≤y≤0.500, and x/3≤z≤(x/3)+1/9, and a full width at half maximum of a diffraction peak of a (110) plane of the complex oxide is 0.40° or more in an X-ray diffraction chart of the dielectric film.
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What is claimed is: 1. A dielectric film comprising a complex oxide represented by a general formula xAO-yBO-zC 2 O 5 as a main component, wherein A is at least one selected from the group consisting of barium, calcium and strontium, B is at least one selected from the group consisting of magnesium and zinc, C is at least one selected from the group consisting of niobium and tantalum, x, y and z satisfy relations: x+y+z=1.000, 0.375≤x≤0.563, 0.250≤y≤0.500, and x/3≤z≤(x/3)+1/9, and a full width at half maximum of a diffraction peak of a (110) plane of the complex oxide is 0.40° or more in an X-ray diffraction chart of the dielectric film. 2. The dielectric film according to claim 1 , wherein the full width at half maximum of the diffraction peak of the (110) plane is 0.40° or more and 6.00° or less. 3. An electronic component comprising a dielectric film according to claim 1 .
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