Semiconductor topologies and devices for soft starting and active fault protection of power converters

Patent metadata

Field	Value
Publication number	US-11196338-B2
Application number	US-201816958959-A
Country	US
Kind code	B2
Filing date	Dec 29, 2018
Priority date	Dec 29, 2017
Publication date	Dec 7, 2021
Grant date	Dec 7, 2021

Abstract

Various examples are provided related to semiconductor topologies and devices that can be used for soft starting and active fault protection of power converters. In one example, an active switch device includes an active switch having a gating control input; and a thyristor having a gating control input. The thyristor is coupled in parallel with the active switch. The active switch can be an IGBT, MOSFET, or other appropriate device. In another example, a power converter can include the active switch devices and switching control circuitry coupled to gating control inputs of the active switch devices.

First claim

Therefore, at least the following is claimed:

1. An active switch device, comprising:
an active switch comprising a collector or source, an emitter or drain, and a gating control input; and
a thyristor comprising a cathode, an anode, and a gating control input, the thyristor coupled in parallel with the active switch with the cathode of the thyristor electrically connected to the collector or source of the active switch, where switching control circuitry provides a gate signal to the gating control input of the thyristor to control a firing angle of the thyristor in response to a charge on a DC bus.

2. The active switch device of claim 1 , wherein the active switch is an insulated-gate bipolar transistor (IGBT) comprising the collector and emitter.

3. The active switch device of claim 2 , wherein the anode of the thyristor is electrically connected to the emitter of the IGBT.

4. The active switch device of claim 1 , wherein the active switch is a metal-oxide-semiconductor field-effect transistor (MOSFET) comprising the source and drain.

5. The active switch device of claim 4 , wherein the anode of the thyristor is electrically connected to the drain of the MOSFET.

6. The active switch device of claim 4 , comprising an enable switch connected in series with the MOSFET, wherein the thyristor is coupled in parallel with the active switch and the enable switch.

7. The active switch device of claim 1 , wherein the gate signal provides a ramp increase in response to the charge on the DC bus.

8. The active switch device of claim 7 , wherein the gate signal is held at a constant level when the DC bus charge reaches a defined level.

9. An active switch device, comprising:
an active switch comprising a gating control input; and
a thyristor comprising a gating control input, the thyristor coupled in parallel with the active switch, wherein switching control circuitry provides a gate signal to the gating control input of the thyristor to control a firing angle of the thyristor, the gate signal providing a ramp increase in response to a charge on a DC bus, and the switching control circuitry provides a second gate signal to the gating control input of the active switch for pulse width modulation (PWM) operation while the firing angle of the thyristor is held constant.

10. The active switch device of claim 7 , wherein the switching control circuitry turns off the thyristor in response to detection of a fault condition on the DC bus.

11. The active switch device of claim 10 , wherein the fault condition is a current threshold.

12. A power converter, comprising:
active switch devices comprising:
an active switch comprising a gating control input; and
a thyristor comprising a gating control input, the thyristor coupled in parallel with the active switch; and

switching control circuitry coupled to gating control inputs of the active switch devices, the switching control circuitry controlling firing angles of thyristors of the active switch devices in response to a charge on a DC bus electrically connected to the active switch devices.

13. The power converter of claim 12 , wherein the switching control circuitry controls the firing angles of the thyristors of the active switch devices in response to one or more additional operational conditions of the power converter.

14. The power converter of claim 12 , wherein the firing angles of the thyristors are decreased over a period of time in response to starting of the power converter.

15. The power converter of claim 14 , wherein the firing angles are linearly decreased over a defined period of time.

16. The power converter of claim 14 , wherein the firing angles are decreased from pi radians.

17. The power converter of claim 16 , wherein the firing angles are decreased to zero radians at steady state operation.

18. The power converter of claim 13 , wherein gating of the thyristors is de-energized in response to detection of a fault condition.

19. The power converter of claim 12 , wherein the switching control circuitry turns off the thyristor of the active switch devices in response to detection of a fault condition.

Assignees

• Univ North Carolina State

Inventors

• Beddingfield Richard B
• Bhattacharya Subhashish

Classifications

• H10D30/66

  Vertical DMOS [VDMOS] FETs · CPC title

• H10D12/411

  Insulated-gate bipolar transistors [IGBT] · CPC title

• H10D84/141

  VDMOS having built-in components · CPC title

• H10D18/00

  Thyristors · CPC title

• H03K17/164 Primary

  using parallel switching arrangements · CPC title