Method for producing an electromigration-resistant crystalline transition-metal silicide layer, a corresponding layer sequence, and a micro heater

Patent metadata

Field	Value
Publication number	US-11191128-B2
Application number	US-201716304005-A
Country	US
Kind code	B2
Filing date	May 24, 2017
Priority date	May 24, 2016
Publication date	Nov 30, 2021
Grant date	Nov 30, 2021

Abstract

A method for producing an electromigration-resistant crystalline transition-metal silicide layer of a layer sequence, for example, to provide a micro heater includes, supplying a semiconductor substrate including an electrically insulating layer; physically depositing a transition metal on the electrically insulating layer; carrying out a plasma-enhanced chemical vapor deposition while forming an inert gas plasma; conveying monosilane to the inert gas plasma, with the monosilane decomposing into silicon and hydrogen and the silicon in the gaseous phase entering into a chemical reaction with the transition metal in order to form the electromigration-resistant crystalline transition-metal silicide layer.

First claim

What is claimed is:

1. A method comprising:
supplying a semiconductor substrate that includes an electrically insulating layer;
depositing, with a physical deposition process, a transition metal onto the electrically insulating layer;
carrying out a plasma-enhanced chemical vapor deposition while forming an inert gas plasma; and
conveying monosilane (SiH4) to the inert gas plasma, thereby decomposing the monosilane into:
(a) hydrogen; and
(b) silicon in a gaseous state in which the silicon chemically reacts with the transition metal, thereby forming an electromigration-resistant crystalline transition-metal silicide layer.

2. The method of claim 1 , wherein the transition metal includes platinum.

3. The method of claim 1 , further comprising producing the inert gas plasma by igniting argon.

4. The method of claim 1 , wherein the deposition of the transition metal is carried out using DC magnetron sputtering.

5. The method of claim 1 , wherein, during the plasma-enhanced chemical vapor deposition, a chamber pressure is adjusted between 1.5 Torr and 2.5 Torr at least partly attributable to the inert gas plasma.

6. The method of claim 1 , wherein a temperature is adjusted between 700° C. and 900° C. during the plasma-enhanced chemical vapor deposition.

7. The method of claim 1 , wherein the electromigration-resistant crystalline transition-metal silicide layer is tempered at a temperature of more than 900° C.

8. The method of claim 1 , further comprising dinitrogen monoxide (N2O) to the inert gas plasma.

9. The method of claim 1 , patterning the electromigration-resistant crystalline transition-metal silicide layer into a micro heater.

10. The method of claim 9 , wherein the patterning is performed using ion-beam etching with a photolithographic mask.

11. A layered arrangement comprising:
a semiconductor substrate that includes an electrically insulating layer;
a transition metal on the electrically insulating layer; and
an electromigration-resistant crystalline transition-metal silicide layer formed by a chemical reaction of the transition metal with gaseous silicon formed by a decomposition of monosilane (SiH4) in an inert gas plasma.

12. A sensor comprising:
an electromigration-resistant crystalline transition-metal silicide layer,
wherein the electromigration-resistant crystalline transition-metal silicide layer is part of a layered arrangement of the sensor, the layered arrangement including:
the electromigration-resistant crystalline transition-metal silicide layer;
a semiconductor substrate that includes an electrically insulating layer; and
a transition metal on the electrically insulating layer.

13. The sensor of claim 12 , wherein the sensor is a gas sensor.

14. The sensor of claim 12 , wherein the sensor is a lambda sensor.

15. The sensor of claim 12 , wherein the sensor is a MEMS sensor.

16. The sensor of claim 12 , wherein the sensor is a pressure sensor.

17. The sensor of claim 12 , wherein the electromigration-resistant crystalline transition-metal silicide layer is arranged as a micro heater.

18. The sensor of claim 17 , wherein the micro heater is patterned.

19. A sensor comprising:
an electromigration-resistant crystalline transition-metal silicide layer,
wherein the electromigration-resistant crystalline transition-metal silicide layer is part of a layered arrangement of the sensor, the layered arrangement including:
the electromigration-resistant crystalline transition-metal silicide layer;
a semiconductor substrate that includes an electrically insulating layer; and
transition metal on the electrically insulating layer and that chemically reacts with gaseous silicon formed by a decomposition of monosilane (SiH4) in an inert gas plasma, thereby forming the electromigration-resistant crystalline transition-metal silicide layer.

Assignees

• Bosch Gmbh Robert

Inventors

• Rusanov Radoslav
• Nagel Sabine

Classifications

• G01N27/16

  caused by burning or catalytic oxidation of surrounding material to be tested, e.g. of gas · CPC title

• B81C2201/0181

  Physical Vapour Deposition [PVD], i.e. evaporation, sputtering, ion plating or plasma assisted deposition, ion cluster beam technology · CPC title

• H05B3/148 Primary

  Silicon, e.g. silicon carbide, magnesium silicide, heating transistors or diodes · CPC title

• B81C1/00095 Primary

  Interconnects · CPC title

• B81B2201/0214

  Biosensors; Chemical sensors · CPC title