Apparatus having a functional structure delimited by a frame structure and method for producing same

Patent metadata

Field	Value
Publication number	US-11189539-B2
Application number	US-201916433278-A
Country	US
Kind code	B2
Filing date	Jun 6, 2019
Priority date	Jun 7, 2018
Publication date	Nov 30, 2021
Grant date	Nov 30, 2021

Abstract

An apparatus includes a semiconductor-based substrate with a functional structure that is formed in or on the semiconductor-based substrate. The apparatus includes a frame structure surrounding the functional structure and includes a coating that covers the functional structure and is delimited by the frame structure.

First claim

What is claimed is:

1. An apparatus, comprising:
a semiconductor-based substrate having a functional structure formed in or on the semiconductor-based substrate;
a frame structure surrounding the functional structure, wherein the frame structure comprises a first vertical sidewall and a second vertical sidewall; and
a coating that covers the functional structure and is delimited by the frame structure, wherein the coating comprises a carbon nanomaterial ink, wherein the coating comprises at least one first planar layer having a planar top surface and a planar bottom surface and one second planar layer having a planar bottom surface, and wherein the at least one first planar layer and one second player layer are laterally delimited by the first vertical sidewall and the second vertical sidewall.

2. The apparatus as claimed in claim 1 , wherein the coating completely covers an inner region of the frame structure.

3. The apparatus as claimed in claim 1 , wherein the coating comprises a homogeneous coating.

4. The apparatus as claimed in claim 1 , wherein the frame structure is arranged on a substrate side, and wherein the frame structure protrudes with respect to a substrate surface.

5. The apparatus as claimed in claim 4 , wherein the frame structure has a height of at least 10 nm and at most 1,000 μm.

6. The apparatus as claimed in claim 1 , wherein the frame structure is arranged on a substrate side, and wherein the frame structure forms a trench in the substrate side.

7. The apparatus as claimed in claim 6 , wherein the frame structure has a depth of at least 10 nm and at most 1,000 μm.

8. The apparatus as claimed in claim 1 , wherein the coating comprises a hydrophilic coating material and wherein the frame structure comprises a hydrophobic material.

9. The apparatus as claimed in claim 1 , wherein the coating comprises a hydrophobic coating material and in which the frame structure comprises a hydrophilic material.

10. The apparatus as claimed in claim 1 , wherein the frame structure comprises a frame width between an inner side of the frame structure and an outer side of the frame structure having a dimension of at least 10 nm and at most 10 mm.

11. The apparatus as claimed in claim 1 , wherein the frame structure comprises an electrically conductive frame structure.

12. The apparatus as claimed in claim 1 , wherein the frame structure comprises at least one first layer and one second layer.

13. The apparatus as claimed in claim 1 , wherein the functional structure comprises an electrode structure.

14. The apparatus as claimed in claim 1 , wherein the frame structure comprises a structurable material.

15. The apparatus as claimed in claim 1 , wherein the functional structure is configured to provide an electrically conductive function and/or a protective function against mechanical and/or chemical influences.

16. The apparatus as claimed in claim 1 , comprising a chemosensor or a transistor.

17. An apparatus, comprising:
a semiconductor-based substrate having a functional structure formed in or on the semiconductor-based substrate;
a frame structure surrounding the functional structure, wherein the frame structure comprises a first vertical sidewall and a second vertical sidewall; and
a coating that covers the functional structure, the coating comprising a first planar layer having a planar top surface and a planar bottom surface and a second planar layer having a planar top surface and a planar bottom surface, wherein the first planar layer and the second planar layer are both laterally delimited by the first vertical sidewall and the second vertical sidewall of the frame structure.

18. An apparatus, comprising:
a semiconductor-based substrate having a functional structure formed on the semiconductor-based substrate;
a frame structure surrounding the functional structure, wherein the frame structure comprises a first vertical sidewall and a second vertical sidewall; and
a coating having first and second planar layers that covers the functional structure and is laterally delimited by the first vertical sidewall and the second vertical sidewall of the frame structure, wherein the frame structure comprises polysilicon, silicon oxide and/or silicon nitride, and wherein the first and second planar layers each comprise a planar top surface and a planar bottom surface.

Assignees

• Infineon Technologies Ag

Inventors

• Makaram Prashanth
• Cooper John
• Ortner Joerg
• Pindl Stephan
• Travan Caterina
• Zoepfl Alexander

Classifications

• H10P14/6342

  Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating · CPC title

• H10W74/134

  the encapsulations being in grooves in the semiconductor body · CPC title

• H10W74/147

  the encapsulations being multilayered · CPC title

• H10W74/40

  characterised by their materials · CPC title

• H10W74/137 Primary

  the encapsulations being directly on the semiconductor body (H10W74/134 takes precedence) · CPC title